A photoresist composition comprising an acid generator and a resin which comprises a structural unit having an acid-liable group, the acid generator generating an acid (I) or an acid (II): the acid (I) showing a hydrogen bonding parameter in the range of 12 (MPa).sup.1/2 to 15 (MPa).sup.1/2 and a polarity parameter in the range of 15 (MPa).sup.1/2 or more; the acid (II) showing a hydrogen bonding parameter in the range of 12 (MPa).sup.1/2 to 15 (MPa).sup.1/2, and a distance of Hansen solubility parameters between the acid (II) and γ-butyrolactone being 7.5 or less, and the distance being calculated from formula (1):

R=(4×(δd.sub.A−18).sup.2+(δp.sub.A−16.6).sup.2+(δh.sub.A−7.4).sup.2).sup.1/2  (1)

in which δd.sub.A represents a dispersion parameter of an acid, δp.sub.A represents a polarity parameter of an acid, δh.sub.A represents a hydrogen bonding parameter of an acid, and R represents a distance of Hansen solubility parameters between an acid and γ-butyrolactone.

A polymer comprising recurring units derived from a sulfonium salt of specific structure having a polymerizable group is coated to form a resist film which is amenable to precise micropatterning because of improved LWR, CDU and resolution.

A carboxylic acid onium salt of formula (1) exerts a satisfactory acid diffusion control (or quencher) function. A resist composition comprising the carboxylic acid onium salt can be processed by DUV or EUV lithography to form a resist pattern with improved resolution, reduced LWR and minimal defects after development.

##STR00001##

A monomer having an onium salt structure represented by formula (1) gives a polymer which is fully compatible with resist components. A resist composition comprising the polymer has advantages including reduced acid diffusion, high sensitivity, high resolution, a good balance of lithography properties, and less defects, and is quite effective for precise micropatterning.

##STR00001##

A resist composition contains (A) a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid, (B) an acid generator represented by the formula (II), and (D) a compound represented by the formula (I), ##STR00001##
wherein R.sup.1 and R.sup.2, m and n, R.sup.3 and R.sup.4, X.sup.1, R.sup.5 and Z1.sup.+ are defined in the specification.

The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a resin (P) including a repeating unit (i) having a group which decomposes by the action of an acid represented by the following General Formula (1), a pattern forming method using the composition, a method for manufacturing an electronic device, and an electronic device. ##STR00001##

A compound having a group represented by the formula (Ia): ##STR00001##
wherein R.sup.1 represents a C.sub.1 to C.sub.8 fluorinated alkyl group, R.sup.2 represents a group having an optionally substituted C.sub.5 to C.sub.18 alicyclic hydrocarbon group, and * represents a binding site.

An exposure apparatus exposes a substrate by projecting a pattern image onto the substrate through a liquid. The exposure apparatus includes a projection optical system by which the pattern image is projected onto the substrate, and a movable member which is movable relative to the projection optical system. A liquid-repellent member, at least a part of a surface of which is liquid-repellent, is provided detachably on the movable member, the liquid-repellent member being different from the substrate.

Disclosed herein are an organic processing liquid for resist film patterning which is capable of suppressing the occurrence of defects in resist patterns, and a pattern forming method. Provided is an organic processing liquid for resist film patterning, which is used to carry out at least one of developing or cleaning of a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition, the liquid including an organic solvent, in which the content of an oxidant in the organic processing liquid is 10 mmol/L or less.

A resist composition which includes a polymer compound including a structural unit which is derived from an acrylic ester in which the hydrogen atom bonded to an α-position carbon atom may be substituted with a substituent and which has a lactone-containing cyclic group containing other electron withdrawing groups such as a cyano group at a side chain terminal, and a compound whose a conjugate acid has an acid dissociation constant (pKa) of less than 3.