A fabrication method of a mask and a mask, a display panel and a touch panel are provided. The fabrication method of the mask includes: providing a substrate; forming a photoresist material layer on the substrate; and performing at least two scanning exposure processes on the photoresist material layer by using a scanning beam, wherein, each of the at least two scanning exposure processes is performed along a first direction parallel to a surface where the substrate is located, the scanning beam in each of the at least two scanning exposure processes scans the photoresist material layer in a scanning region having a preset width, at least one pair of adjacent scanning regions partially overlap with each other, and a partially overlapping region of the at least one pair of adjacent scanning regions is located in a first region of the mask.

A fabrication method of a mask and a mask, a display panel and a touch panel are provided. The fabrication method of the mask includes: providing a substrate; forming a photoresist material layer on the substrate; and performing at least two scanning exposure processes on the photoresist material layer by using a scanning beam, wherein, each of the at least two scanning exposure processes is performed along a first direction parallel to a surface where the substrate is located, the scanning beam in each of the at least two scanning exposure processes scans the photoresist material layer in a scanning region having a preset width, at least one pair of adjacent scanning regions partially overlap with each other, and a partially overlapping region of the at least one pair of adjacent scanning regions is located in a first region of the mask.

Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.

Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.

A method for collecting information in image-error compensation is provided. The method includes providing a reticle having a first image structure and a second image structure; moving a light shading member to control a first exposure field; projecting a light over the first exposure field; recording an image of the first image structure after the light is projected; moving the light shading member to control a second exposure field; projecting the light over the second exposure field; and recording an image of the second image structure after the light is projected.

This invention relates to the field of lithography and particularly to a lithographic method, a lithographic product and a lithographic material. The invention provides a lithographic method including the steps of: 1) providing first light and second light to the lithographic material, wherein at least part of molecules for generating effector molecules controllable by a molecular switch in a turned-on state generate effector molecules, thereby changing physical and/or chemical properties of the lithographic material in an area where the molecular switch is turned on; and 2) removing either the lithographic material that has changed in physical or chemical properties or the lithographic material that has not changed. The novel lithographic method provided by the invention can effectively break through the diffraction limit of light, thereby further improving lithography precision.

This invention relates to the field of lithography and particularly to a lithographic method, a lithographic product and a lithographic material. The invention provides a lithographic method including the steps of: 1) providing first light and second light to the lithographic material, wherein at least part of molecules for generating effector molecules controllable by a molecular switch in a turned-on state generate effector molecules, thereby changing physical and/or chemical properties of the lithographic material in an area where the molecular switch is turned on; and 2) removing either the lithographic material that has changed in physical or chemical properties or the lithographic material that has not changed. The novel lithographic method provided by the invention can effectively break through the diffraction limit of light, thereby further improving lithography precision.

In an exposure apparatus, on a substrate holder (34), a plurality of grating areas (RG) is arranged mutually apart in the X-axis direction, and a plurality of heads (66a to 66d) that irradiates a measurement beam with respect to the grating area and can move in the Y-axis direction is arranged outside of the substrate holder. A control system controls movement of the substrate holder in at least directions of three degrees of freedom within an XY plane, based on measurement information of at least three heads of the plurality of heads facing the grating area and measurement information of a measurement device that measures position information of the plurality of heads. The measurement beam of each of the plurality of heads, during the movement of substrate holder in the X-axis direction, moves off of one of the plurality of grating areas and switches to another adjacent grating area.

In an exposure apparatus, on a substrate holder (34), a plurality of grating areas (RG) is arranged mutually apart in the X-axis direction, and a plurality of heads (66a to 66d) that irradiates a measurement beam with respect to the grating area and can move in the Y-axis direction is arranged outside of the substrate holder. A control system controls movement of the substrate holder in at least directions of three degrees of freedom within an XY plane, based on measurement information of at least three heads of the plurality of heads facing the grating area and measurement information of a measurement device that measures position information of the plurality of heads. The measurement beam of each of the plurality of heads, during the movement of substrate holder in the X-axis direction, moves off of one of the plurality of grating areas and switches to another adjacent grating area.

Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.