An inspection-sensitive additive can improve inspection of photoresist on semiconductor wafers. The inspection-sensitive additive can be used to stain the photoresist or can be deposited as a layer on the photoresist. The inspection-sensitive additive can have a k-value that is greater than 20% larger than a photoresist k-value of the photoresist layer for an inspection wavelength between 120 nm and 950 nm.

A method of producing a substrate provided with a shaped graphene material electrically conductive region is described, the method comprising applying a photoresist material to a substrate, shaping the photoresist material to cover at least part of the substrate that is not to be electrically conductive, depositing a graphene material onto the substrate over the shaped photoresist material, and subsequently removing the photoresist material. Also described are devices such as touch sensors and shaped light emitting devices manufactured using the method.

A substrate processing method and apparatus to create a sacrificial masking layer is disclosed. The layer is created by providing a first precursor selected to react with one of a radiation modified and unmodified layer portion and to not react with the other one of the radiation modified and unmodified layer portion on a substrate in a reaction chamber to selectively grow the sacrificial masking layer.

The present disclosure relates in one aspect to methods of preparing non-homogeneous polymer materials wherein light is used to control structure and/or composition. In certain embodiments, the present disclosure provides methods for creating gradient index optical elements including holographic elements.

A compound represented by Formula (1). [In the formula, X represents a halogen atom or an alkoxy group, R.sup.1 represents any one group selected from an alkyl group having 1 to 5 carbon atoms, a group represented by Formula (R2-1), and a group represented by Formula (R2-2), R.sup.2 represents a group represented by Formula (R2-1) or (R2-2), n0 represents an integer of 0 or greater, n1 represents an integer of 0 to 5, and n2 represents a natural number of 1 to 5.]

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An inspection-sensitive additive can improve inspection of photoresist on semiconductor wafers. The inspection-sensitive additive can be used to stain the photoresist or can be deposited as a layer on the photoresist. The inspection-sensitive additive can have a k-value that is greater than 20% larger than a photoresist k-value of the photoresist layer for an inspection wavelength between 120 nm and 950 nm.

Metal ion sequestering particles were formed in a one-pot single step synthesis by azeotropically removing water while heating a reaction mixture containing a branched poly(ethylenimine), poly(acrylic acid), di-(2-picolylamine), a catalytic amount of N,N-duimethylformamide, toluene, and either glycine or a carboxy-terminated poly(N-isopropylacrylamide). No other catalyst was present. The branched and crosslinked particles formed using the poly(N-isopropylacrylamide) sequestered metal ion from water at ambient temperature and released the bound metal ion upon heating.

In a method of making a conductive structure, a reducing agent is applied to a region of a sheet of graphene oxide composite paper for a predetermined amount of time. The reducing agent is removed after the predetermined amount of time so as to expose a region of reduced graphene oxide disposed in the sheet of graphene oxide composite paper. A conductive structure includes a sheet of graphene oxide composite paper. At least one region on the sheet of graphene oxide composite paper includes reduced graphene oxide.

A material with a nanotexture comprising structures extending from a substrate. The structures are modified by coating the nanotexture with a protective coating and partially removing the coating, exposing a portion of the structure for functionalization.

A composition applied over a resist pattern includes a modified polysiloxane in which some of silanol groups of a polysiloxane containing a hydrolysis condensate of a hydrolyzable silane are capped, and a solvent, wherein a ratio of silanol groups to all Si atoms contained in the modified polysiloxane is 40 mol % or less. The modified polysiloxane ratio of the silanol groups is adjusted to a desired ratio by reacting the silanol groups of the polysiloxane with an alcohol. A method for producing a semiconductor device having the steps of forming a resist film on a substrate, forming a resist pattern by exposing and developing the resist film, applying the composition over the resist pattern during or after development, and reversing a pattern by removing the resist pattern by etching.