Disclosed herein is a method of forming a pattern, the method including: providing a substrate in which a pattern is to be formed; forming a silicon photoresist layer over the substrate; exposing the silicon photoresist to activating wavelengths of radiation; curing the silicon photoresist; developing the cured silicon photoresist to remove the portion of the photoresist that was exposed to the activating wavelengths of radiation and etching the substrate to form the pattern.

Disclosed are a semiconductor photoresist composition and a method of forming or providing patterns using the same, the semiconductor photoresist composition including an organometallic compound, a pyrrole-based compound including pyrrole, a pyrrole derivative, or a combination thereof; and a solvent.