Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.

Organometallic solutions have been found to provide high resolution radiation based patterning using thin coatings. The patterning can involve irradiation of the coated surface with a selected pattern and developing the pattern with a developing agent to form the developed image. The patternable coatings may be susceptible to positive-tone patterning or negative-tone patterning based on the use of an organic developing agent or an aqueous acid or base developing agent. The radiation sensitive coatings can comprise a metal oxo/hydroxo network with organic ligands. A precursor solution can comprise an organic liquid and metal polynuclear oxo-hydroxo cations with organic ligands having metal carbon bonds and/or metal carboxylate bonds.

The present disclosure relates to a semiconductor device, including: at least two processing units; a processing liquid spraying arm, which is located above the processing units; a fixed baffle, located between the adjacent processing units, the fixed baffle being provided with an opening by which the adjacent processing units are communicated, the processing liquid spraying arm moving between the adjacent processing units through the opening; a movable baffle, located at least on one side of the fixed baffle or located in the fixed baffle; a first driving apparatus, connected to the movable baffle and configured to drive the movable baffle to move to completely block the opening when the processing liquid spraying arm stops in the processing unit, so as to isolate the adjacent processing units, and drive the movable baffle to move to unblock the opening when the processing liquid spraying arm moves between the adjacent processing units.

The present disclosure relates to a semiconductor device, including: at least two processing units; a processing liquid spraying arm, which is located above the processing units; a fixed baffle, located between the adjacent processing units, the fixed baffle being provided with an opening by which the adjacent processing units are communicated, the processing liquid spraying arm moving between the adjacent processing units through the opening; a movable baffle, located at least on one side of the fixed baffle or located in the fixed baffle; a first driving apparatus, connected to the movable baffle and configured to drive the movable baffle to move to completely block the opening when the processing liquid spraying arm stops in the processing unit, so as to isolate the adjacent processing units, and drive the movable baffle to move to unblock the opening when the processing liquid spraying arm moves between the adjacent processing units.

A negative tone photoresist and method for developing the negative tone photoresist is disclosed. For example, the negative tone photoresist includes a solvent, a dissolution inhibitor, and a polymer. The polymer includes a hydroxyl group. The polymer may be greater than 40 weight percent of a total weight of the negative tone photoresist.

Photoresist materials described herein may include various types of tin (Sn) clusters having one or more types of ligands. As an example, a photoresist material described herein may include tin clusters bearing two or more different types of carboxylate ligands. As another example, a photoresist material described herein may include tin oxide clusters that include carbonate ligands. The two or more different types of carboxylate ligands and the carbonate ligands may reduce, minimize, and/or prevent crystallization of the photoresist materials described herein, which may increase the coating performance of the photoresist materials and may decrease the surface roughness of photoresist layers formed using the photoresist materials described herein.

An immersion lithographic apparatus is provided having a substrate table including a drain configured to receive immersion fluid which leaks into a gap between an edge of a substrate on the substrate table and an edge of a recess in which the substrate is located. A thermal conditioning system is provided to thermally condition at least the portion of the recess supporting the substrate by directing one or more jets of fluid onto a reverse side of the section supporting the substrate.

[Problem] To provide a negative type photosensitive composition which can be developed with a low-concentration developer. [Means for Solution] A negative type photosensitive composition comprising (I) an alkali-soluble resin having a carboxyl group, (II) a polymerization initiator, (III) a compound containing two or more (meth)acryloyloxy groups, and (IV) a solvent, wherein the content of the compound containing two or more (meth)acryloyloxy groups is 40 to 300 mass % based on the total mass of the alkali-soluble resin.

[Problem] To provide a negative type photosensitive composition which can be developed with a low-concentration developer. [Means for Solution] A negative type photosensitive composition comprising (I) an alkali-soluble resin having a carboxyl group, (II) a polymerization initiator, (III) a compound containing two or more (meth)acryloyloxy groups, and (IV) a solvent, wherein the content of the compound containing two or more (meth)acryloyloxy groups is 40 to 300 mass % based on the total mass of the alkali-soluble resin.

An object of the present invention is to provide a chemical liquid purification method which makes it possible to obtain a chemical liquid having excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid. The chemical liquid purification method according to an embodiment of the present invention is a chemical liquid purification method including obtaining a chemical liquid by purifying a substance to be purified containing an organic solvent, in which a content of the stabilizer in the substance to be purified with respect to the total mass of the substance to be purified is equal to or greater than 0.1 mass ppm and less than 100 mass ppm.