A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.

A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.

A nanomaterial ribbon patterning method includes: forming a first nanomaterial layer having a first threshold strain on an upper surface of a substrate; forming a second nanomaterial layer on an upper surface of the first nanomaterial layer; forming a thin layer having a second threshold strain smaller than the first threshold strain on an upper surface of the second nanomaterial layer; generating plural cracks on the thin layer and the second nanomaterial layer by applying tensile force to the substrate; placing a mask on an upper surface of the thin layer; removing the mask and peeling off the sacrificial layer on the upper surface of the thin layer; and removing the sacrificial layer to form a nanomaterial ribbon pattern.

A nanomaterial ribbon patterning method includes: forming a first nanomaterial layer having a first threshold strain on an upper surface of a substrate; forming a second nanomaterial layer on an upper surface of the first nanomaterial layer; forming a thin layer having a second threshold strain smaller than the first threshold strain on an upper surface of the second nanomaterial layer; generating plural cracks on the thin layer and the second nanomaterial layer by applying tensile force to the substrate; placing a mask on an upper surface of the thin layer; removing the mask and peeling off the sacrificial layer on the upper surface of the thin layer; and removing the sacrificial layer to form a nanomaterial ribbon pattern.

Organic light emitting diode (OLED) devices are disclosed that include a first layer; a backfill layer having a structured first side and a second side; a planarization layer having a structured first side and a second side; and a second layer; wherein the second side of the backfill layer is coincident with and adjacent to the first layer, the second side of the planarization layer is coincident with and adjacent to the second layer, the structured first side of the backfill layer and structured first side of the planarization layer form a structured interface, the refractive index of the backfill later is index matched to the first layer, and the refractive index of the planarization layer is index matched to the second layer.

Organic light emitting diode (OLED) devices are disclosed that include a first layer; a backfill layer having a structured first side and a second side; a planarization layer having a structured first side and a second side; and a second layer; wherein the second side of the backfill layer is coincident with and adjacent to the first layer, the second side of the planarization layer is coincident with and adjacent to the second layer, the structured first side of the backfill layer and structured first side of the planarization layer form a structured interface, the refractive index of the backfill later is index matched to the first layer, and the refractive index of the planarization layer is index matched to the second layer.

A mask plate and a manufacturing method thereof, a flexible substrate stripping apparatus and a flexible substrate stripping method are provided. The mask plate includes a laser-transmitting substrate and a patterned laser-shielding layer located on the laser transmitting substrate.

A resist underlayer film material contains: one or more compounds shown by the following general formula (1); and an organic solvent. W represents an organic group with a valency of “n” having 2 to 50 carbon atoms; X represents a terminal group structure shown by the following general formula (2) or (3); when a ratio of the structure of the following general formula (2) to that of (3) is “a” to “b”, “a” and “b” satisfy the relations 0.70≤a≤0.99 and 0.01≤b≤0.30. “n” represents an integer of 1 to 10. Z represents an aromatic group with a valency of (k+1) having 6 to 20 carbon atoms. “A” represents a single bond or —O—(CH.sub.2).sub.p—. “k” represents an integer of 1 to 5. “p” represents an integer of 1 to 10. L represents a single bond or —(CH.sub.2).sub.r—. “1” represents 2 or 3; and “r” represents an integer of 1 to 5.

##STR00001##

A resist underlayer film material contains: one or more compounds shown by the following general formula (1); and an organic solvent. W represents an organic group with a valency of “n” having 2 to 50 carbon atoms; X represents a terminal group structure shown by the following general formula (2) or (3); when a ratio of the structure of the following general formula (2) to that of (3) is “a” to “b”, “a” and “b” satisfy the relations 0.70≤a≤0.99 and 0.01≤b≤0.30. “n” represents an integer of 1 to 10. Z represents an aromatic group with a valency of (k+1) having 6 to 20 carbon atoms. “A” represents a single bond or —O—(CH.sub.2).sub.p—. “k” represents an integer of 1 to 5. “p” represents an integer of 1 to 10. L represents a single bond or —(CH.sub.2).sub.r—. “1” represents 2 or 3; and “r” represents an integer of 1 to 5.

##STR00001##

This method includes a step of imaging, by an imaging apparatus in a substrate treatment system, a reference substrate which is a reference for condition setting and acquiring a captured image of the reference substrate; and a step of imaging, by the imaging apparatus, a treated substrate on which the predetermined treatment has been performed under a current treatment condition and acquiring a captured image of the treated substrate. A deviation amount in color information between the captured image of the treated substrate and the captured image of the reference substrate is calculated. A correction amount of the treatment condition is calculated based on a correlation model acquired in advance and on the deviation amount in the color information. Also included is a step of setting the treatment condition based on the correction amount and performing the treatment on a target substrate based on the set treatment condition.