The present invention employs a compound represented by the following formula (0): ##STR00001## wherein R.sup.Y is a linear, branched, or cyclic alkyl group of 1 to 30 carbon atoms or an aryl group of 6 to 30 carbon atoms; R.sup.Z is an N-valent group of 1 to 60 carbon atoms or a single bond; each R.sup.T is independently an alkyl group of 1 to 30 carbon atoms optionally having a substituent, an aryl group of 6 to 40 carbon atoms optionally having a substituent, an alkenyl group of 2 to 30 carbon atoms optionally having a substituent, an alkoxy group of 1 to 30 carbon atoms optionally having a substituent, a halogen atom, a nitro group, an amino group, a cyano group, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, wherein the alkyl group, the alkenyl group, and the aryl group each optionally contain an ether bond, a ketone bond, or an ester bond, wherein at least one R.sup.T is a hydroxy group or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; X is an oxygen atom, a sulfur atom, or not a crosslink; each m is independently an integer of 0 to 9, wherein at least one m is an integer of 1 to 9; N is an integer of 1 to 4, wherein when N is an integer of 2 or larger, N structural formulas within the parentheses [ ] are the same or different; and each r is independently an integer of 0 to 2.

A method of removing a photoresist, a laminate, a method of forming a metallic pattern, a polyimide resin, and a stripper are provided. The method of removing the photoresist includes forming a release layer on a substrate, the release layer having a first surface and a second surface opposite to each other, wherein the first surface of the release layer is in contact with the substrate; forming a photoresist layer on the second surface of the release layer; and removing the release layer and the photoresist layer. The release layer is formed by a polyimide resin. The polyimide resin is obtained by performing a polymerization of tetracarboxylic dianhydrides, diamines, and phenolamines. The diamines include hydroxyfluorinated diamines, benzoic acid diamines, and aminotetramethyldisiloxanes.

A substrate treatment apparatus for applying a coating solution to a front surface of a substrate and developing an exposed coating film on the front surface of the substrate, includes a film forming unit configured to form a friction reducing film on a rear surface of the substrate before exposure processing, the friction reducing film reducing friction between the rear surface of the substrate and a holding surface for holding the rear surface of the substrate in the exposure processing.

A substrate treatment apparatus for applying a coating solution to a front surface of a substrate and developing an exposed coating film on the front surface of the substrate, includes a film forming unit configured to form a friction reducing film on a rear surface of the substrate before exposure processing, the friction reducing film reducing friction between the rear surface of the substrate and a holding surface for holding the rear surface of the substrate in the exposure processing.

A photoresist polymer is synthesized from a repeating unit that comprises a first leaving group including an ester group, and a second leaving group capable of being removed together with the first leaving group.

A photoresist polymer is synthesized from a repeating unit that comprises a first leaving group including an ester group, and a second leaving group capable of being removed together with the first leaving group.

The present disclosure relates to a photoresist composition, a method for preparing the same, and a patterning method. The photoresist composition includes: 1 wt % to 10 wt % of a photosensitizer; 10 wt % to 20 wt % of a phenolic resin; 0.1 wt % to 5.5 wt % of an additive; and 75 wt % to 88 wt % of a solvent, based on the total weight of the photoresist composition, in which the photosensitizer includes: 20 wt % to 70 wt % of a first photosensitive compound represented by formula (1), 20 wt % to 70 wt % of a second photosensitive compound represented by formula (2), and 1 wt % to 35 wt % of a third photosensitive compound represented by formula (3), based on the total weight of the photosensitizer. The photoresist composition of the present disclosure simultaneously guarantees high resolution and high sensitivity, and can meet actual production requirements.

A resist composition for pattern printing contains a binder, a filler, a thickener, and a polyfunctional (meth)acrylate. The resist composition does not contain a photoinitiator. The resist composition also contains photocatalytic titanium oxide. A method for forming a pattern includes a resist composition that is pattern-wise printed, and then the resist composition is irradiated with an actinic radiation such that seepage of the resist component from an end of the pattern during the pattern formation using the resist composition is suppressed and the seepage portion is decomposed. As a result, it is possible to drastically reduce the seepage without impairing the rheology of the resist composition and additionally, to remove a slightly seeping portion without requiring, for example, a harmful ozone treatment or the like.

A resist composition for pattern printing contains a binder, a filler, a thickener, and a polyfunctional (meth)acrylate. The resist composition does not contain a photoinitiator. The resist composition also contains photocatalytic titanium oxide. A method for forming a pattern includes a resist composition that is pattern-wise printed, and then the resist composition is irradiated with an actinic radiation such that seepage of the resist component from an end of the pattern during the pattern formation using the resist composition is suppressed and the seepage portion is decomposed. As a result, it is possible to drastically reduce the seepage without impairing the rheology of the resist composition and additionally, to remove a slightly seeping portion without requiring, for example, a harmful ozone treatment or the like.

Methods are disclosed to prepare permanent materials that can be coated onto microelectronic substrates or used for other structural or optical applications. The materials are thermally stable to at least about 300 C., curable using a photo or thermal process, exhibit good chemical resistance (including during metal passivation), and have a lifespan of at least about 5 years, preferably at least about 10 years, in the final device. Advantageously, these materials can also be bonded at room temperature. The materials exhibit no movement or squeeze-out after bonding and adhere to a variety of substrate types.