A radiation sensitive composition including a siloxane polymer exhibiting phenoplast crosslinking reactivity as a base resin, which is excellent in resolution and can be used as a radiation sensitive composition capable of allowing a pattern having a desired-shape to be formed with sufficient precision. A radiation sensitive composition including as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof; and a photoacid generator, in which the hydrolyzable silane includes hydrolyzable silanes of Formula (1)
R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4-(a+b)  Formula (1)
wherein R.sup.1 is an organic group of Formula (1-2) ##STR00001##
and is bonded to a silicon atom through a Si—C bond or a Si—O bond, and R.sup.3 is a hydrolyzable group; and Formula (2)
R.sup.7.sub.cR.sup.8.sub.dSi(R.sup.9).sub.4-(c+d)  Formula (2)
wherein R.sup.7 is an organic group of Formula (2-1) ##STR00002##
and is bonded to a silicon atom through a Si—C bond or a Si—O bond, and R.sup.9 is a hydrolyzable group.

A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: ##STR00001##
The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is linking group.

A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: ##STR00001##
The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is linking group.

A resist underlayer composition and a method of forming patterns using a resist underlayer composition, the resist underlayer composition including a polymer, the polymer including a structural unit that is a reaction product of an isocyanurate compound, the isocyanurate compound having at least one thiol group thereon, and a solvent.

A resist underlayer composition and a method of forming patterns using a resist underlayer composition, the resist underlayer composition including a polymer, the polymer including a structural unit that is a reaction product of an isocyanurate compound, the isocyanurate compound having at least one thiol group thereon, and a solvent.

Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.

Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.

A method comprising providing a carbonaceous material, the substrate having a first thermal conductivity. The method further comprises depositing a first masking layer having a second thermal conductivity on at least a portion of the substrate, a ratio of the second thermal conductivity to the first thermal conductivity being less than or equal to 1:30. The method further comprises depositing a second masking layer on the first masking layer to form an etch mask, and etching an exposed portion of the substrate.

A method comprising providing a carbonaceous material, the substrate having a first thermal conductivity. The method further comprises depositing a first masking layer having a second thermal conductivity on at least a portion of the substrate, a ratio of the second thermal conductivity to the first thermal conductivity being less than or equal to 1:30. The method further comprises depositing a second masking layer on the first masking layer to form an etch mask, and etching an exposed portion of the substrate.

The present disclosure is directed to organotin cluster compounds having formula (I) and their use as photoresists in extreme ultraviolet lithography processes.

##STR00001##