A method for forming a nanopore device includes providing a sapphire substrate and forming oxide layers on the front and back sides of the sapphire substrate. The oxide layer on the back is patterned to form an etch mask. The method also includes performing a crystalline orientation dependent wet anisotropic etch on the backside of the sapphire substrate using the etch mask to form a cavity having sloped sides to expose a portion of the first oxide layer. A silicon nitride membrane layer is formed on the oxide layer on the front side of the sapphire substrate. Next, the exposed portion of the oxide layer in the cavity is removed to cause the exposed portion of the silicon nitride membrane layer to be suspended over the cavity in the sapphire substrate. Subsequently, an opening is formed in the suspended portion of the silicon nitride membrane layer to form the nanopore.

A compound of Formula (5-1) or Formula (5-3):

##STR00001##

where R.sup.17 and R.sup.21 are each an ethyl group; R.sup.22 and R.sup.23 are each a methyl group; and R.sup.16 and R.sup.20 are each a methoxy group.

A compound of Formula (5-1) or Formula (5-3):

##STR00001##

where R.sup.17 and R.sup.21 are each an ethyl group; R.sup.22 and R.sup.23 are each a methyl group; and R.sup.16 and R.sup.20 are each a methoxy group.

In one exemplary embodiment, a method for forming a pattern includes (a) forming, on a substrate, a first pattern having an opening and containing a first material, (b) forming a filling portion in the opening, the filling portion containing a second material different from the first material, and (c) removing the first pattern so that the filling portion remains as a second pattern inverted with respect to the first pattern. At least one of the first material or the second material contains tin.

In one exemplary embodiment, a method for forming a pattern includes (a) forming, on a substrate, a first pattern having an opening and containing a first material, (b) forming a filling portion in the opening, the filling portion containing a second material different from the first material, and (c) removing the first pattern so that the filling portion remains as a second pattern inverted with respect to the first pattern. At least one of the first material or the second material contains tin.

A substrate processing apparatus and a substrate processing method are provided, in which a flow rate of CO.sub.2 injected into a supercritical drying vessel is controlled through multi-level pressure control. The substrate processing method includes disposing a substrate coated with a chemical liquid in a process chamber, that includes a space in which the substrate is processed; drying the substrate by using a supercritical fluid; and taking the substrate out of the process chamber when the substrate is dried.

The present disclosure is directed to a system and method configured for curing non-reactive photopolymer collected by an absorbent blotting material during thermal processing of flexographic printing elements. Uncured non-reacted portions of the photopolymer are removed by contacting the one or more layers of photopolymer with the web of absorbent blotting material at an elevated temperature to soften or liquefy the uncured non-reacted portions of the one or more layers of photopolymer and absorb the softened or liquefied uncured non-reacted portions into the absorbent web of absorbent blotting material. The web of absorbent blotter material containing the absorbed softened or liquefied non-reacted portions of the photopolymer is exposed to actinic radiation from the one or more UV light sources to crosslink and cure the softened or liquefied non-reacted portions of the photopolymer.

A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.

A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.

The present disclosure is directed to a system and method configured for curing non-reactive photopolymer collected by an absorbent blotting material during thermal processing of flexographic printing elements. Uncured non-reacted portions of the photopolymer are removed by contacting the one or more layers of photopolymer with the web of absorbent blotting material at an elevated temperature to soften or liquefy the uncured non-reacted portions of the one or more layers of photopolymer and absorb the softened or liquefied uncured non-reacted portions into the absorbent web of absorbent blotting material. The web of absorbent blotter material containing the absorbed softened or liquefied non-reacted portions of the photopolymer is exposed to actinic radiation from the one or more UV light sources to crosslink and cure the softened or liquefied non-reacted portions of the photopolymer.