A system and method for manufacturing a micropillar array (20). A carrier (11) is provided with a layer of metal ink (20i). A high energy light source (14) irradiates the metal ink (20i) via a mask (13) between the carrier (11) and the light source. The mask is configured to pass a cross-section illuminated image of the micropillar array onto the metal ink (20i), thereby causing a patterned sintering of the metal ink (20i) to form a first subsection layer (21) of the micropillar array (20) in the layer of metal ink (20i). A further layer of the metal ink (20i) is applied on top of the first subsection layer (21) of the micropillar array (20) and irradiated via the mask (13) to form a second subsection layer (21) of the micropillar array on top. The process is repeated to achieve high aspect ratio micropillars 20p.

A flexure includes a metal substrate whose front end supports a slider and a wiring part having a base insulating layer and a conductor layer formed on the base insulating layer. The wiring part includes a normal wiring part that is on the metal substrate and an aerial wiring part that is on a space separated from the metal substrate. The base insulating layer of the aerial wiring part is formed to be thinner than that of the normal wiring part. This configuration reduces a rigidity contribution ratio of the wiring part.

A flexure includes a metal substrate whose front end supports a slider and a wiring part having a base insulating layer and a conductor layer formed on the base insulating layer. The wiring part includes a normal wiring part that is on the metal substrate and an aerial wiring part that is on a space separated from the metal substrate. The base insulating layer of the aerial wiring part is formed to be thinner than that of the normal wiring part. This configuration reduces a rigidity contribution ratio of the wiring part.

Using a broadband light source and a photomask, surface energy gradients can be directly transferred into polymer films. The Marangoni effect causes high surface energy regions to rise upon heating the film. This leads to the formation of three-dimensional topography that can be locked in by quenching the polymer by cooling.

A method of fabricating a multi-tone amplitude photomask includes providing a mask substrate. The method includes providing a stepped pattern in at least one layer of material on a surface of the mask substrate. The stepped pattern includes at least two steps and at least three levels. Each level of the stepped pattern provides a different intensity of light when a light source shines light on the stepped pattern.

A method of fabricating a multi-tone amplitude photomask includes providing a mask substrate. The method includes providing a stepped pattern in at least one layer of material on a surface of the mask substrate. The stepped pattern includes at least two steps and at least three levels. Each level of the stepped pattern provides a different intensity of light when a light source shines light on the stepped pattern.

A pattern is formed by (i) applying a chemically amplified positive resist composition comprising (A) a base resin, (B) a photoacid generator, (C) an organic solvent, and (D) a polyvinyl alcohol or polyvinyl alkyl ether onto a substrate to form a resist film thereon, (ii) exposing the resist film to radiation, and (iii) dry etching the resist film with an oxygen-containing gas for development. Using the chemically amplified positive resist composition, a positive pattern is formed via dry development without a need for silylation.

A pattern is formed by (i) applying a chemically amplified positive resist composition comprising (A) a base resin, (B) a photoacid generator, (C) an organic solvent, and (D) a polyvinyl alcohol or polyvinyl alkyl ether onto a substrate to form a resist film thereon, (ii) exposing the resist film to radiation, and (iii) dry etching the resist film with an oxygen-containing gas for development. Using the chemically amplified positive resist composition, a positive pattern is formed via dry development without a need for silylation.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Cantilevers, SPM tips and nanomachining tools are created in the plane of wafers to obtain new and high performance parts. The method produces more parts for any given wafer, then conventional methods and allows every part on any given wafer to be different from any other, permitting great freedom in new SPM and nanomachining techniques and product development.