Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. Electrodes may be disposed adjacent the process volume and process fluid is provided to the process volume via a plurality of fluid conduits to facilitate immersion field guided post exposure bake processes. A post process chamber for rinsing, developing, and drying a substrate is also provided.

A method for producing an actinic ray-sensitive or radiation-sensitive resin composition having a viscosity of 10 mPa.Math.s or more, the method containing a step 1 of charging at least a resin of which polarity increases by an action of an acid, a photoacid generator, and a solvent as raw materials into a stirring tank, and a step 2 of stirring the raw materials in the stirring tank. A liquid temperature in the stirring tank is controlled to be equal to or lower than a 3.0° C. higher temperature than a liquid temperature at a start of the step 2 throughout the entire step 2, and the control of the liquid temperature in the stirring tank in the step 2 is performed by passing an inert gas through the stirring tank.

A manufacturing method for a cured substance includes a film forming step of applying a specific photosensitive resin composition onto a base material to form a film, an exposure step of selectively exposing the film, a development step of developing the exposed film with a developer to form a pattern, a treatment step of bringing a treatment liquid into contact with the pattern, and a heating step of heating the pattern after the treatment step, in which at least one of the developer or the treatment liquid contains at least one compound selected from the group consisting of a base and a base generator.

A lithography apparatus is provided. The lithography apparatus includes a wafer stage configured to secure a semiconductor wafer and having a plurality of electrodes. The lithography apparatus also includes an exposure tool configured to perform an exposure process by projecting an extreme ultraviolet (EUV) light on the semiconductor wafer. The lithography apparatus further includes a controller configured to control power supplied to the electrodes to have a first adjusted voltage during the exposure process for a first group of exposure fields on the semiconductor wafer so as to secure the semiconductor wafer to the wafer stage. The first adjusted voltage is in a range from about 1.6 kV to about 3.2 kV.

A lithography apparatus is provided. The lithography apparatus includes a wafer stage configured to secure a semiconductor wafer and having a plurality of electrodes. The lithography apparatus also includes an exposure tool configured to perform an exposure process by projecting an extreme ultraviolet (EUV) light on the semiconductor wafer. The lithography apparatus further includes a controller configured to control power supplied to the electrodes to have a first adjusted voltage during the exposure process for a first group of exposure fields on the semiconductor wafer so as to secure the semiconductor wafer to the wafer stage. The first adjusted voltage is in a range from about 1.6 kV to about 3.2 kV.

A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.

A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.

A salt capable of producing a resist pattern with excellent line edge roughness is represented by formula (I): ##STR00001##
wherein, R.sup.1 represents —(X.sup.1—O).sub.o—R.sup.5, and o represents an integer of 0 to 6, R.sup.5 represents a hydrocarbon group having 1 to 12 carbon atoms, X.sup.1 represents a divalent hydrocarbon group having 2 to 12 carbon atoms, R.sup.2 represents an alkyl group having 1 to 12 carbon atoms or the like, I represents an integer of 0 to 3, and when I is 2 or more, a plurality of R.sup.2 may be the same or different from each other, R.sup.3 and R.sup.4 each represent a hydrogen atom or the like, m and n each represent 1 or 2, X.sup.0 represents a single bond, —CH.sub.2—, —O— or —S—, and R.sup.6 and R.sup.7 each represent an alkyl group having 1 to 4 carbon atoms which has a fluorine atom or the like.

A salt capable of producing a resist pattern with excellent line edge roughness is represented by formula (I): ##STR00001##
wherein, R.sup.1 represents —(X.sup.1—O).sub.o—R.sup.5, and o represents an integer of 0 to 6, R.sup.5 represents a hydrocarbon group having 1 to 12 carbon atoms, X.sup.1 represents a divalent hydrocarbon group having 2 to 12 carbon atoms, R.sup.2 represents an alkyl group having 1 to 12 carbon atoms or the like, I represents an integer of 0 to 3, and when I is 2 or more, a plurality of R.sup.2 may be the same or different from each other, R.sup.3 and R.sup.4 each represent a hydrogen atom or the like, m and n each represent 1 or 2, X.sup.0 represents a single bond, —CH.sub.2—, —O— or —S—, and R.sup.6 and R.sup.7 each represent an alkyl group having 1 to 4 carbon atoms which has a fluorine atom or the like.

The present invention relates to a positive-type photosensitive resin composition and a cured film prepared therefrom. As the positive-type photosensitive resin composition comprises a siloxane copolymer having a bridge structure introduced into its molecule, it is possible to form a cured film with an excellent film retention rate and improved surface cloudiness phenomenon after development.