The present invention relates to photosensitive compositions containing polynorbornene (PNB) polymers and certain additives that are useful for forming microelectronic and/or optoelectronic devices and assemblies thereof, and more specifically to compositions encompassing PNBs and certain multifunctional crosslinking agents, and two or more phenolic compounds which are resistant to thermo-oxidative chain degradation and exhibit improved mechanical properties.

The present invention relates to photosensitive compositions containing polynorbornene (PNB) polymers and certain additives that are useful for forming microelectronic and/or optoelectronic devices and assemblies thereof, and more specifically to compositions encompassing PNBs and certain multifunctional crosslinking agents, and two or more phenolic compounds which are resistant to thermo-oxidative chain degradation and exhibit improved mechanical properties.

A resist composition containing a base material component and a compound represented by General Formula (d0), in which in the formula, Rd.sup.0 represents a condensed cyclic group containing a condensed ring containing at least one aromatic rings, the condensed cyclic group having, as a substituent, an acid decomposable group which is decomposed under action of acid to form a polar group, Yd.sup.0 represents a divalent linking group or a single bond, M.sup.m+ represents an m-valent organic cation, and m represents an integer of 1 or more

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A resist composition containing a base material component and a compound represented by General Formula (d0), in which in the formula, Rd.sup.0 represents a condensed cyclic group containing a condensed ring containing at least one aromatic rings, the condensed cyclic group having, as a substituent, an acid decomposable group which is decomposed under action of acid to form a polar group, Yd.sup.0 represents a divalent linking group or a single bond, M.sup.m+ represents an m-valent organic cation, and m represents an integer of 1 or more

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A photosensitive resin composition comprising (A) a silicone resin comprising recurring units having formula (a1) and recurring units having formula (b1), (B) a filler, and (C) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which can be processed into a fine pattern in thick film form, has improved film properties like crack resistance, and is reliable as protective film. ##STR00001##

A photosensitive resin composition comprising (A) a silicone resin comprising recurring units having formula (a1) and recurring units having formula (b1), (B) a filler, and (C) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which can be processed into a fine pattern in thick film form, has improved film properties like crack resistance, and is reliable as protective film. ##STR00001##

A method of manufacturing a semiconductor device includes forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate. A metal-containing photoresist layer is formed over the first main surface of the semiconductor substrate. The first protective layer is removed, and the metal-containing photoresist layer is selectively exposed to actinic radiation. A second protective layer is formed over the edge portion of the first main surface of the semiconductor substrate. The selectively exposed photoresist layer is developed to form a patterned photoresist layer, and the second protective layer is removed.

A resist composition comprising a base polymer and an acid generator in the form of a sulfonium or iodonium salt of a fluorinated sulfonic acid having a phenylene group which is substituted with a fluorinated cyclic group and a nitro group is provided. The resist composition offers a high sensitivity, reduced LWR and improved CDU independent of whether it is of positive or negative tone.

A resist composition comprising a base polymer and an acid generator in the form of a sulfonium or iodonium salt of a fluorinated sulfonic acid having a phenylene group which is substituted with a fluorinated cyclic group and a nitro group is provided. The resist composition offers a high sensitivity, reduced LWR and improved CDU independent of whether it is of positive or negative tone.

A method for processing a substrate is described. The method includes forming a metal containing resist layer onto a substrate, patterning the metal containing resist layer, and performing a post exposure bake on the metal containing resist layer. The post exposure bake on the metal containing resist layer is a field guided post exposure bake operation and includes the use of an electric field to guide the ions or charged species within the metal containing resist layer. The field guided post exposure bake operation may be paired with a post development field guided bake operation.