The present invention relates to photosensitive compositions containing polynorbornene (PNB) polymers and certain additives that are useful for forming microelectronic and/or optoelectronic devices and assemblies thereof, and more specifically to compositions encompassing PNBs and certain multifunctional crosslinking agents, and two or more phenolic compounds which are resistant to thermo-oxidative chain degradation and exhibit improved mechanical properties.

The present invention relates to photosensitive compositions containing polynorbornene (PNB) polymers and certain additives that are useful for forming microelectronic and/or optoelectronic devices and assemblies thereof, and more specifically to compositions encompassing PNBs and certain multifunctional crosslinking agents, and two or more phenolic compounds which are resistant to thermo-oxidative chain degradation and exhibit improved mechanical properties.

A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1):

##STR00001##

wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B.sup.1 and B.sup.2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B.sup.1 and B.sup.2 optionally form a ring with a carbon atom bonded to B.sup.1 and B.

A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1):

##STR00001##

wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B.sup.1 and B.sup.2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B.sup.1 and B.sup.2 optionally form a ring with a carbon atom bonded to B.sup.1 and B.

A method for making at least one structure having sidewalls with different inclinations includes providing a stack including a substrate having a layer of a positive resin whose tone could be reversed when exposed to an insolation dose D<Dinversion, the patterns exposed to the dose Dinversion not being sensitive to creeping at the glass-transition temperature Tfluage of the resin; forming a non-sensitive first pattern by exposing the resin to a first dose D1≥Dinversion, the first pattern having a first sidewall having a first inclination; and forming a creep-sensitive second pattern by exposing the resin to a second dose D2<Dinversion. Creeping is performed by applying a temperature T≥Tfluage to make the second pattern creep over a portion of the first pattern by leaving uncovered at least partially the first sidewall of the first pattern, and defining at least one second sidewall having a second inclination different from the first inclination.

In an embodiment, a pattern transfer processing chamber includes a pattern transfer processing chamber and a loading area external to the pattern transfer processing chamber. The loading area is configured to transfer a wafer to or from the pattern transfer processing chamber. The loading area comprises a first region including a loadport, a second region including a load-lock between the first region and the pattern transfer processing chamber, and an embedded baking chamber configured to heat a patterned photoresist on the wafer.

In an embodiment, a pattern transfer processing chamber includes a pattern transfer processing chamber and a loading area external to the pattern transfer processing chamber. The loading area is configured to transfer a wafer to or from the pattern transfer processing chamber. The loading area comprises a first region including a loadport, a second region including a load-lock between the first region and the pattern transfer processing chamber, and an embedded baking chamber configured to heat a patterned photoresist on the wafer.

A method for lithography patterning includes forming a first layer over a substrate, the first layer being radiation-sensitive, exposing the first layer to a radiation, mixing a first solution and a second solution, thereby forming a developer, and dispensing the developer to the exposed first layer to form a pattern over the substrate. The dispensing of the developer includes varying a concentration of a developing chemical in the developer in multiple stages, such that the concentration of the developing chemical in the developer increases from a first stage to a subsequent second stage, and increases from the second stage to a subsequent third stage real-time during the dispensing.

A method for lithography patterning includes forming a first layer over a substrate, the first layer being radiation-sensitive, exposing the first layer to a radiation, mixing a first solution and a second solution, thereby forming a developer, and dispensing the developer to the exposed first layer to form a pattern over the substrate. The dispensing of the developer includes varying a concentration of a developing chemical in the developer in multiple stages, such that the concentration of the developing chemical in the developer increases from a first stage to a subsequent second stage, and increases from the second stage to a subsequent third stage real-time during the dispensing.

Method for producing coating composition applied to patterned resist film in lithography process for solvent development to reverse pattern. The method including: step obtaining hydrolysis condensation product by hydrolyzing and condensing hydrolyzable silane in non-alcoholic hydrophilic solvent; step of solvent replacement wherein non-alcoholic hydrophilic solvent replaced with hydrophobic solvent for hydrolysis condensation product. Method for producing semiconductor device, including: step of applying resist composition to substrate and forming resist film; step of exposing and developing formed resist film; step applying composition obtained by above production method to patterned resist film obtained during or after development in step, forming coating film between patterns; step of removing patterned resist film by etching and reversing patterns. Production method that exposure is performed using ArF laser (with wavelength of 193 nm) or EUV (with wavelength of 13.5 nm). Production method that development is negative development with organic solvent.