A liquid processing apparatus includes a substrate holder configured to hold a substrate; a processing liquid supply configured to supply a processing liquid onto a front surface of the substrate; a gas supply configured to supply a gas onto the front surface of the substrate; and a controller. The gas supply includes a diffusion nozzle which is provided with multiple discharge openings respectively elongated at different angles with respect to the front surface of the substrate. The controller performs controlling the gas supply to jet the gas from the diffusion nozzle onto a region of the front surface of the substrate including at least a central portion thereof in a state that the processing liquid is supplied on the front surface of the substrate.

A substrate processing method includes a preprocessing forming step of forming a preprocessing film on a surface of a substrate having the surface on which a first region and a second region in which different substances are exposed are present, a preprocessing film separating step of separating the preprocessing film from the surface of the substrate with a stripping liquid, a processing film forming step of forming a processing film on the surface of the substrate after the preprocessing film separating step, and a processing film separating step of separating the processing film from the surface of the substrate with the stripping liquid. A removal capacity for the processing film to remove the first removal target present in the second region is higher than a removal capacity for the preprocessing film to remove the first removal target present in the second region, and a removal capacity for the preprocessing film to remove the first removal target present in the first region is higher than a removal capacity for the processing film to remove the first removal target present in the first region.

A substrate processing method includes a preprocessing forming step of forming a preprocessing film on a surface of a substrate having the surface on which a first region and a second region in which different substances are exposed are present, a preprocessing film separating step of separating the preprocessing film from the surface of the substrate with a stripping liquid, a processing film forming step of forming a processing film on the surface of the substrate after the preprocessing film separating step, and a processing film separating step of separating the processing film from the surface of the substrate with the stripping liquid. A removal capacity for the processing film to remove the first removal target present in the second region is higher than a removal capacity for the preprocessing film to remove the first removal target present in the second region, and a removal capacity for the preprocessing film to remove the first removal target present in the first region is higher than a removal capacity for the processing film to remove the first removal target present in the first region.

A stripping-solution machine and working method thereof are provided. The stripping-solution machine includes: a plurality stages of chambers, which are arranged sequentially in order, wherein each stage of the chamber is correspondingly connected to a storage box; at least one filter device, wherein one end of the filter device is disposed to be connected to a storage box corresponding to a current stage chamber by a first pipe, and another end of the filter device is connected to a next stage chamber by a second pipe. Furthermore, a plurality of valve switches are at least disposed on the first pipe or the second pipe.

A stripping-solution machine and working method thereof are provided. The stripping-solution machine includes: a plurality stages of chambers, which are arranged sequentially in order, wherein each stage of the chamber is correspondingly connected to a storage box; at least one filter device, wherein one end of the filter device is disposed to be connected to a storage box corresponding to a current stage chamber by a first pipe, and another end of the filter device is connected to a next stage chamber by a second pipe. Furthermore, a plurality of valve switches are at least disposed on the first pipe or the second pipe.

A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 mn.

The present invention relates to a photoresist stripper composition for manufacturing a display, and more particularly, to an integrated photoresist stripper composition which can be used in every process for manufacturing a display. More specifically, the photoresist stripper composition for manufacturing a display according to the present invention can be applied to all of transition metals and oxide semiconductor wirings, and has an excellent ability to remove modified photoresist after a hard bake process, and implant process, and a dry etch process have been performed. In particular, the photoresist stripper composition for manufacturing a display according to the present invention exhibits a corrosion inhibitory effect that has been further specialized for copper (Cu) wiring pattern edge portions which are susceptible to corrosion following dry-etching.

A resist underlayer film that exhibits removability and preferably solubility only in wet etching reagent solutions, while exhibiting good resistance to resist developers that are resist solvents or aqueous alkali solutions. The composition for forming a resist underlayer film includes a dicyanostyryl group-bearing polymer (P) or dicyanostyryl group-bearing compound (C) and includes solvent, and does not contain a protonic acid curing catalyst and does not contain an alkylated aminoplast crosslinking agent derived from melamine, urea, benzoguanamine, or glycoluril.

The present invention provides a substrate treating apparatus including: a support unit for supporting and rotating a substrate on which a first pattern and a second pattern different from the first pattern are formed; a liquid supply unit for supplying a treatment liquid to the substrate supported on the support unit; and a heating unit for heating any one of the first pattern and the second pattern.

A light-enhanced wafer processing system disclosed herein which includes a rotatable chuck configured to support and selectively rotate at least one wafer, at least one dispenser body configured to selectively flow at least one photolytic material onto a surface of the wafer, and at least one optical radiation source may be configured to provide optical radiation to at least a portion of the wafer having photolytic material applied thereto, wherein the optical radiation is configured to result in the formation of optically-induced radicals having enhanced reactivity with at least one material applied to the wafer.