A first object of the present invention is to provide a method of manufacturing a conductive substrate having a low defect ratio. In addition, a second object of the present invention is to provide a conductive substrate that is obtained using the method of manufacturing a conductive substrate. In addition, a third object of the present invention is to provide a touch sensor, an antenna, and an electromagnetic wave shielding material that include the conductive substrate.

The method of manufacturing a conductive substrate is a method of manufacturing a conductive substrate including a substrate and a patterned conductive layer that is disposed on the substrate, the method including: steps X1 to X7 in this order or steps Y1 to Y6 in this order.

A tile system for covering a surface. The tile system comprises a first tile assembly connected to a second tile assembly by a connector. Each tile assembly comprises a first tile stacked on a second tile, the first tile and the second tile joined to a reinforcing material disposed therebetween. The connector comprises a first component and a second component that is complementary to the first component. The first component is mounted to the first tile assembly, and the second component is mounted to the second tile assembly.

Disclosed are a separator for lipid bilayer membrane formation capable of forming a lipid bilayer membrane with excellent properties, wherein the separator for lipid bilayer membrane formation has sufficient mechanical strength and can be easily manufactured in a large scale by using a general-purpose machine without need of using an expensive machine, and a method of producing the separator. The separator for lipid bilayer membrane formation includes a thin film having one or more through holes and made of a resin capable of being wet-etched, and reinforcing layers covering both surfaces of the thin film and made of a resin capable of being wet-etched. The reinforcing layers cover the whole area of the thin film, except for the through holes and the peripheries thereof, and each through hole has a tapered cross-sectional shape.

Disclosed are a separator for lipid bilayer membrane formation capable of forming a lipid bilayer membrane with excellent properties, wherein the separator for lipid bilayer membrane formation has sufficient mechanical strength and can be easily manufactured in a large scale by using a general-purpose machine without need of using an expensive machine, and a method of producing the separator. The separator for lipid bilayer membrane formation includes a thin film having one or more through holes and made of a resin capable of being wet-etched, and reinforcing layers covering both surfaces of the thin film and made of a resin capable of being wet-etched. The reinforcing layers cover the whole area of the thin film, except for the through holes and the peripheries thereof, and each through hole has a tapered cross-sectional shape.

The present invention provides a method for forming a patterned polyimide layer with the use of a positive photoresist composition. The composition comprises a cresol-type novolac resin, a diazonaphthoquinone-based sensitizer and an organic solvent; based on the cresol-type novolac resin with a total amount of 100 parts by weight, the amount of the diazonaphthoquinone-based sensitizer ranges from 40 parts to 60 parts by weight, the amount of the free cresol in the cresol-type novolac resin is lower than 2 parts by weight, and the alkaline dissolution rate (ADR) of the cresol-type novolac resin in an aqueous solution of 3.5 wt % to 7 wt % tetramethylammonium hydroxide is lower than 285 Å/s. The positive photoresist composition has excellent chemical resistance to the polyimide stripper, and can specifically improve the protective ability of the photoresist layer to the low-dielectric polyimide layer, thereby optimizing the manufacturing process and quality of the patterned polyimide layer.

An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor with which the occurrence of defects is suppressed such that a fine resist pattern or a fine semiconductor element can be manufactured. A treatment liquid for manufacturing a semiconductor according to an embodiment of the present invention includes: one compound (A) or two or more compounds (A) that satisfy the following requirement (a); one compound (B) or two or more compounds (B) that satisfy the following requirement (b); and one compound (C) or two or more compounds (C) selected from the group consisting of an Al compound and an NOx compound. In the treatment liquid, a total content of the compound (A) in the treatment liquid is 70.0 to 99.9999999 mass %, a total content of the compounds (B) is 10.sup.−10 to 0.1 mass %, and a ratio P of the compound (C) to the compound (B) represented by the following Expression I is 10.sup.3 to 10.sup.−6. Requirement (a): a compound that is selected from the group consisting of an amide compound, an imide compound, and a sulfoxide compound and of which a content in the treatment liquid is 5.0 to 99.9999999 mass % Requirement (b): a compound that is selected from the group consisting of an amide compound having 6 or more carbon atoms, an imide compound, and a sulfoxide compound and of which a content in the treatment liquid is 10.sup.−1 to 0.1 mass %
P=[Total Mass of Compound (C)]/[Total Mass of Compound (B)]  (Expression I)

A rinse process is described for processing an initially patterned structure formed with an organometallic radiation sensitive material, in which the rinse process can remove portions of the composition remaining after pattern development to make the patterned structure more uniform such that a greater fraction of patterned structures can meet specifications. The radiation sensitive material can comprise alkyl tin oxide hydroxide compositions. The rinsing process can be effectively used to improve patterning of fine structures using extreme ultraviolet light.

A method of microfabrication includes depositing a photoresist film on a working surface of a semiconductor wafer, the photoresist film being sensitive to extreme ultraviolet radiation; exposing the photoresist film to a pattern of extreme ultraviolet radiation; performing a hybrid develop of the photoresist film. The hybrid develop includes executing a first development process to remove a first portion of the photoresist film; stopping the development of the photoresist film after the first development process, the photo resist film including a structure having a first critical dimension larger than a target critical dimension after the stopping; and after stopping the development, executing a second development process to remove a second portion of the photoresist film and shrinking the critical dimension of the structure from the first critical dimension to a second critical dimension that is less than the first critical dimension.

A method includes forming a tri-layer. The tri-layer includes a bottom layer; a middle layer over the bottom layer; and a top layer over the middle layer. The top layer includes a photo resist. The method further includes removing the top layer; and removing the middle layer using a chemical solution. The chemical solution is free from potassium hydroxide (KOH), and includes at least one of a quaternary ammonium hydroxide and a quaternary ammonium fluoride.

A processing solution composition for reducing collapse of a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source and a method of forming a pattern using the same are proposed. The processing solution composition includes 0.0001 to 1 wt % of a nonionic surfactant having an HLB (Hydrophilic-Lipophilic Balance) value of 9 to 16, 0.0001 to 1 wt % of an alkaline material selected from the group consisting of tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, and mixtures thereof, and 98 to 99.9998 wt % of water, and is effective at reducing the collapse of a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source.