A processing solution composition for reducing collapse of a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source and a method of forming a pattern using the same are proposed. The processing solution composition includes 0.0001 to 1 wt % of a nonionic surfactant having an HLB (Hydrophilic-Lipophilic Balance) value of 9 to 16, 0.0001 to 1 wt % of an alkaline material selected from the group consisting of tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, and mixtures thereof, and 98 to 99.9998 wt % of water, and is effective at reducing the collapse of a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source.

A metal probe structure and a method for fabricating the same are provided. The metal probe structure includes a multi-layer substrate, a first flexible dielectric layer, a second flexible dielectric layer, and a plurality of first metal components. The first flexible dielectric layer is disposed over the multi-layer substrate and has a conductive layer formed thereover. The second flexible dielectric layer is disposed over the first flexible dielectric layer to cover the conductive layer. The plurality of first metal components is disposed over the conductive layer and partially in the second flexible dielectric layer to serve as a metal probe.

A photoresist stripping composition comprising an organic amine and a method is provided. The photoresist stripping composition comprising an organic amine having the following formula (1).

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Embodiments of the present disclosure provide a photoresist removal method and a photoresist removal device. The photoresist removal method includes: providing a substrate and a photoresist located on the substrate; wherein the photoresist includes an inner core layer and an outer shell layer covering a surface of the inner core layer, and a concentration of ions doped in the outer shell layer is greater than a concentration of ions doped in the inner core layer; performing at least one shelling treatment on the photoresist, until the outer shell layer is completely removed; wherein one shelling treatment includes: performing a water vapor treatment on the outer shell layer to soften at least part of the outer shell layer, to form a soft outer shell layer; and removing the soft outer shell layer; and removing the inner core layer after the outer shell layer is completely removed.

Embodiments of the present disclosure provide a photoresist removal method and a photoresist removal device. The photoresist removal method includes: providing a substrate and a photoresist located on the substrate; wherein the photoresist includes an inner core layer and an outer shell layer covering a surface of the inner core layer, and a concentration of ions doped in the outer shell layer is greater than a concentration of ions doped in the inner core layer; performing at least one shelling treatment on the photoresist, until the outer shell layer is completely removed; wherein one shelling treatment includes: performing a water vapor treatment on the outer shell layer to soften at least part of the outer shell layer, to form a soft outer shell layer; and removing the soft outer shell layer; and removing the inner core layer after the outer shell layer is completely removed.

The substrate processing method includes a liquid film forming step of forming a liquid film of a sulfuric acid-containing liquid on a principal surface of a substrate, an ozone-containing gas exposing step of filling an ozone-containing gas inside a processing chamber capable of housing the substrate to expose the liquid film to the ozone-containing gas, and a substrate heating step of heating the substrate in a state that the substrate is disposed inside the processing chamber which is filled with the ozone-containing gas and the liquid film is also formed on the principal surface of the substrate.

Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.

Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.

A substrate processing apparatus includes a substrate holding section, a chemical liquid supply section, a substrate information acquiring section, a chemical liquid processing condition information acquiring section, and a controller. The substrate information acquiring section acquires substrate information including hardened layer thickness information indicating a thickness of a hardened layer in a resist layer of a processing target substrate or ion implantation condition information indicating a condition for ion implantation by which the hardened layer has been formed in the resist layer. The chemical liquid processing condition information acquiring section acquires based on the substrate information chemical liquid processing condition information indicating a chemical liquid processing condition for the processing target substrate from a trained model. The controller controls the substrate holding section and the chemical liquid supply section -to perform processing with a chemical liquid on the processing target substrate based on the chemical liquid processing condition information.

Methods are described for forming polarized image films in which a displayed image changes depending on the state of polarization of a backside illumination source. Methods are also described for eliminating the leakage of unpolarized light through certain parts of the images resulting in unwanted visual artifacts in these images. Polarized dual graphic films achieving images with higher optical density and uniformity, minimum ghosting and mis-registration, can be made by a manufacturing technique that is faster, capable of higher production volumes, and that can produce polarized images at a lower cost. An exemplary method provides for forming a polarized image or pattern on an oriented substrate by using a negative patterned resist image or pattern formed by graphic arts techniques, followed by the imbibition of a dichroic dye or iodine ink to form a corresponding positive image in the areas not protected by the resist.