The present application discloses a photomask and an exposure system, the photomask comprising a completely transparent region and a completely shading region disposed around the periphery of the completely transparent region, and a shading region is disposed in the completely transparent region, and a light transmittance of the shading region is defined as T, 0≤T<100%.

In a drive method for a spatial light modulator, out of a first boundary region and a second boundary region arranged adjacently in a Y-direction and extending in an X-direction, mirror elements arranged at a first pitch not resolved by a projection optical system, in the X-direction in the first boundary region are set in the phase 0, and the other mirror elements therein are set in the phase π; mirror elements arranged at a second pitch not resolved by the projection optical system, in the X-direction in the second boundary region are set in the phase π, and the other mirror elements therein are set in the phase 0.

Extreme ultra-violet (EUV) lithography ruling engine specifically configured to print one-dimensional lines on a target workpiece includes source of EUV radiation; a pattern-source defining 1D pattern; an illumination unit (IU) configured to irradiate the pattern-source; and projection optics (PO) configured to optically image, with a reduction factor N>1, the 1D pattern on image surface that is optically-conjugate to the 1D pattern. Irradiation of the pattern-source can be on-axis or off-axis. While 1D pattern has first spatial frequency, its optical image has second spatial frequency that is at least twice the first spatial frequency. The pattern-source can be flat or curved. The IU may include a relay reflector. A PO's reflector may include multiple spatially-distinct reflecting elements aggregately forming such reflector. The engine is configured to not allow formation of optical image of any 2D pattern that has spatial resolution substantially equal to a pitch of the 1D pattern of the pattern-source.

A method includes providing a plurality of fuel droplets into an EUV source vessel by a fuel droplet generator, in which the fuel droplet generator has a first portion inside the EUV source vessel and a second portion outside the EUV source vessel; generating a plurality of output signals respectively from a plurality of oscillation sensors on the fuel droplet generator; determining whether the output signals are acceptable; and determining whether an unwanted oscillation originates from the first portion of the fuel droplet generator or the second portion of the fuel droplet generator when the output signals is determined as unacceptable.

A manufacturing method for a structure includes preparing a dry film supported on one surface of a support; bonding the dry film to a substrate so that the dry film and the substrate are in contact with each other; performing first exposure of the dry film bonded to the substrate via the support; removing the support after the first exposure; performing second exposure of the dry film after the support is removed via a photomask; and developing the dry film after the first exposure and the second exposure.

The present disclosure provides a mask, a layout, a lithography system and a lithography process of the lithography system. The mask includes: a base which is transparent to exposure light; and a light-shielding film covering a part of a bottom surface of the base, wherein the light-shielding film forms a main pattern and an assistant pattern, the main pattern is light-shielding to the exposure light and is transferable, and the assistant pattern is light-shielding to the exposure light and is not transferable. The present disclosure can ensure a normal transfer of the main pattern, and reduce light transmittance of the mask.

In one embodiment, a semiconductor manufacturing apparatus includes a stage on which a substrate is to be installed. The apparatus further includes a light source configured to generate light. The apparatus further includes a shaper including a rotating portion provided with an opening configured to shape the light from the light source, the shaper being configured to irradiate a photomask with the light which has passed through the opening. The apparatus further includes a controller configured to change a width of the light passing through the opening by rotating the rotating portion while scanning the substrate by the light which has passed through the photomask.

A lithographic apparatus is provided that has a sensor at substrate level, the sensor including a radiation receiver, a transmissive plate supporting the radiation receiver, and a radiation detector, wherein the sensor is arranged to avoid loss of radiation between the radiation receiver and a final element of the radiation detector.

A super-resolution system for nano-patterning is disclosed, comprising an exposure head that enables a super-resolution patterning exposures. The super-resolution exposures are carried out using electromagnetic radiation and plasmonic structures, and in some embodiments, plasmonic structures having specially designed super-resolution apertures, of which the “bow-tie” and “C-aperture” are examples. These apertures create small but bright images in the near-field transmission pattern. A writing head comprising one or more of these apertures is held in close proximity to a medium for patterning. In some embodiments, a data processing system is provided to re-interpret the data to be patterned into a set of modulation signals used to drive the multiple individual channels and multiple exposures, and a detection means is provided to verify the data as written.

A photolithography method is provided. The photolithography method includes forming a photoresist layer on a wafer, exposing a portion of the photoresist layer by using an exposure device and a mask, and forming a photoresist pattern by removing a non-exposed portion of the photoresist layer. The mask includes a substrate having a main pattern area and a blocking area outside the main pattern area, a main pattern on the main pattern area of the substrate, and a blocking pattern on the blocking area of the substrate. An external circumference of the blocking pattern extends to the maximum area of the mask that may be illuminated by the exposure device or to the outside of the maximum area of the mask.