An exposure apparatus that projects a pattern of an original onto a substrate via a projection optical system and exposes the substrate is provided. The apparatus comprises an aberration correction member arranged on an optical path of exposure light between the original and the substrate, and a driver which drives the aberration correction member. The aberration correction member includes a first optical element including a first surface having a three-fold rotational symmetric aspherical shape with respect to an optical axis of the exposure light, and a second optical element spaced apart from the first optical element along the optical axis and including a second surface facing the first surface and having an aspherical shape that complementarily corrects an aberration generated by the first optical element.

Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of the first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.

Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of the first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.

The present disclosure generally relates to semiconductor structures and, more particularly, to overlay mark structures and methods of manufacture. The method includes: forming an overlay mark within a layer of a stack of layers; increasing a density of an upper layer of the stack of layers, above the layer, the increased density protecting the overlay mark; and polishing the upper layer or one or more layers above the upper layer of the stack of layers.

A detection apparatus that detects a mark formed on a substrate is provided. The detection apparatus includes a substrate holder configured to hold the substrate, an optical system accommodated in the substrate holder, an image sensor configured to capture an image of the mark from the reverse surface side of the substrate through the optical system, and a processor configured to perform detection processing for the mark based on the image of the mark captured by the image sensor. The processor corrects a detection value of the mark based on the position of the mark on the substrate in the height direction and information concerning the telecentricity of the optical system.

An evaluation method for evaluating an aberration of a projection optical system in an exposure apparatus is provided. A first prediction coefficient of a first prediction formula for an aberration that is symmetrical with respect to an optical axis of the projection optical system is obtained, and a second prediction coefficient of a second prediction formula for an aberration that is asymmetrical with respect to the optical axis of the projection optical system is obtained. The aberration of the projection optical system is evaluated using the first prediction coefficient in a case where the shape of the illuminated region is determined as symmetrical with respect to the optical axis, and the aberration of the projection optical system is evaluated using the first and the second prediction coefficients in a case where the shape of the illuminated region is asymmetrical with respect to the optical axis.

A lithographic apparatus (10) and method for preventing exposure of a peripheral portion (P) of a substrate (S). An edge mask (M) has a radial concave edge (E) that extends over less than half a circle arch. The edge mask (M) is connected to a mask carrier (4) that circumnavigates the projection system (2) to adjust a tangential coordinate () and a radial coordinate (R) of the edge mask (M) with respect to the optical axis (A) of the projection system (2) for inserting the edge mask (M) at a variable distance into the beam of radiation (B). The tangential and radial positions (,R) of the edge mask (M) are coordinated with a changing position (X,Y) of the substrate (S) to prevent exposure of the peripheral portion (P) of the substrate (S) during exposure of the target region (T).

An evaluation method for evaluating an aberration of a projection optical system in an exposure apparatus is provided. A first prediction coefficient of a first prediction formula for an aberration that is symmetrical with respect to an optical axis of the projection optical system is obtained, and a second prediction coefficient of a second prediction formula for an aberration that is asymmetrical with respect to the optical axis of the projection optical system is obtained. The aberration of the projection optical system is evaluated using the first prediction coefficient in a case where the shape of the illuminated region is determined as symmetrical with respect to the optical axis, and the aberration of the projection optical system is evaluated using the first and the second prediction coefficients in a case where the shape of the illuminated region is asymmetrical with respect to the optical axis.

Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of the first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.

The invention relates to a system (2) for producing an optical mask (35) for surface microtexturing, said system (2) comprising: a substrate (10) having a surface (11) that is to be textured; a layer of material (20) which covers the surface (11) of the substrate (10) and has an outer surface (21) that is exposed to the outside environment; and a generating and depositing device for generating and depositing droplets (30) on the outer surface (21) of the layer of material (20), in a specific arrangement (31) under condensation, forming the optical mask (35) on the outer surface (21) of the layer of material (20). The invention also relates to a treatment plant comprising a system (2) of said type. The invention further relates to a method for producing a mask as well as to a surface microtexturing method.