G03F7/70216

Substrate with multilayer reflective film, mask blank, transfer mask and method of manufacturing semiconductor device
10175394 · 2019-01-08 · ·

A substrate with multilayer reflective film for discovery of critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film using a highly sensitive defect inspection apparatus. The substrate has a multilayer reflective film obtained by alternately laminating a high refractive index layer and a low refractive index layer on a main surface of a mask blank substrate used in lithography, wherein an integrated value I of the power spectrum density (PSD) at a spatial frequency of 1 m.sup.1 to 10 m.sup.1 of the surface of the substrate with a multilayer reflective film, obtained by measuring a region measuring 3 m3 m with an atomic force microscope, is not more than 18010.sup.3 nm.sup.3, and the maximum value of the rower spectrum density (PSD) at a spatial frequency of 1 m.sup.1 to 10 m.sup.1 is not more than 50 nm.sup.4.

ENERGY CONTROLLER FOR EXCIMER-LASER SILICON CRYSTALLIZATION
20180348644 · 2018-12-06 ·

Excimer laser annealing apparatus includes and excimer laser delivering laser-radiation pulses to a silicon layer supported on a substrate translated with respect to the laser pulses such that the consecutive pulses overlap on the substrate. The energy of each of the laser-radiation pulses is monitored, transmitted to control-electronics, and the energy of a next laser pulse is adjusted by a high-pass digital filter.

REFLECTIVE OPTICAL ELEMENT AND OPTICAL SYSTEM FOR EUV LITHOGRAPHY
20180329308 · 2018-11-15 ·

A reflective optical element for the extreme ultraviolet (EUV) wavelength range having a multi-layer system extending over an area on a substrate. The system includes layers (54, 55) made of at least two different materials with different real parts of the refractive index in the EUV arranged alternately. A layer of one of the two materials forms a stack with the layer or layers arranged between this layer and the nearest layer of the same material with increasing distance from the substrate. In at least one stack (53), the material of the layer (55) with the lower real part of the refractive index and/or the material of the layer (54) with the larger real part of the refractive index is a combination (551, 552) made of at least two substances.

MASK AND METHOD OF FABRICATING DISPLAY DEVICE USING THE MASK
20180307104 · 2018-10-25 ·

A mask includes a base substrate, and a light shielding pattern including a light transmitting portion and a light shielding portion on the base substrate, wherein the light shielding portion includes a third source electrode portion, a third drain electrode portion spaced apart from the third source electrode portion and including at least a portion parallel to the third source electrode portion, a first auxiliary light shielding portion at an end portion of the third source electrode portion facing the third drain electrode portion, and a second auxiliary light shielding portion at an end portion of the third drain electrode portion facing the third source electrode portion.

Chromatically corrected objective with specifically structured and arranged dioptric optical elements and projection exposure apparatus including the same

An objective having a plurality of optical elements arranged to image a pattern from an object field to an image field at an image-side numerical aperture NA>0.8 with electromagnetic radiation from a wavelength band around a wavelength includes a number N of dioptric optical elements, each dioptric optical element i made from a transparent material having a normalized optical dispersion
n.sub.i=n.sub.i(.sub.0)n.sub.i(.sub.0+1 pm)
for a wavelength variation of 1 pm from a wavelength .sub.0. The objective satisfies the relation .Math. .Math. i = 1 N n i ( s i - d i ) .Math. 0 NA 4 A
for any ray of an axial ray bundle originating from a field point on an optical axis in the object field, where s.sub.i is a geometrical path length of a ray in an ith dioptric optical element having axial thickness d.sub.i and the sum extends on all dioptric optical elements of the objective. Where A=0.2 or below, spherochromatism is sufficiently corrected.

Photostructured chemical devices and methods for making same
10099918 · 2018-10-16 · ·

A photostructurable ceramic is processed using photostructuring process steps for embedding devices within a photostructurable ceramic volume, the devices may include one or more of chemical, mechanical, electronic, electromagnetic, optical, and acoustic devices, all made in part by creating device material within the ceramic or by disposing a device material through surface ports of the ceramic volume, with the devices being interconnected using internal connections and surface interfaces.

DETECTION APPARATUS, PATTERN FORMING APPARATUS, OBTAINING METHOD, DETECTION METHOD, AND ARTICLE MANUFACTURING METHOD
20180275535 · 2018-09-27 ·

A detection apparatus that detects a mark formed on a substrate is provided. The detection apparatus includes a substrate holder configured to hold the substrate, an optical system accommodated in the substrate holder, an image sensor configured to capture an image of the mark from the reverse surface side of the substrate through the optical system, and a processor configured to perform detection processing for the mark based on the image of the mark captured by the image sensor. The processor corrects a detection value of the mark based on the position of the mark on the substrate in the height direction and information concerning the telecentricity of the optical system.

Mask and method of fabricating display device using the mask

A mask includes a base substrate, and a light shielding pattern including a light transmitting portion and a light shielding portion on the base substrate, wherein the light shielding portion includes a third source electrode portion, a third drain electrode portion spaced apart from the third source electrode portion and including at least a portion parallel to the third source electrode portion, a first auxiliary light shielding portion at an end portion of the third source electrode portion facing the third drain electrode portion, and a second auxiliary light shielding portion at an end portion of the third drain electrode portion facing the third source electrode portion.

UV MASK DEVICE AND METHOD FOR USING THE SAME

The present application discloses an ultraviolet (UV) mask device and a method for using the UV mask device. The UV mask device includes: a platform, configured for carrying a substrate thereon; a mask substrate, configured above the platform for fixing a mask corresponding to the substrate on the platform; and a light source array, configured above the mask substrate by a first distance and including a plurality of UV light-emitting diodes (UV LEDs) emitting light having a first single central wavelength.

Mask structure for deposition device, deposition device, and operation method thereof

A mask structure for a deposition device includes first segments and second segments. The first segments are arranged in a direction surrounding a central axis and separated from one another. The second segments are disposed above the first segments. Each of the second segments overlaps two of the first segments adjacent to each other in a vertical direction parallel to an extending direction of the central axis. A deposition device includes a process chamber, a stage, and the mask structure. The stage is at least partially disposed in the process chamber and includes a holding structure of a substrate. The mask structure is disposed in the process chamber, located over the stage, and covers a peripheral region of the substrate to be held on the stage. An operation method of the deposition device includes horizontally adjusting positions of the first segments and the second segments respectively between different deposition processes.