The invention is directed to a device for exposure control in photolithographic direct exposure processes for two-dimensional structures in photosensitive coatings and to a method for converting registration data into direct exposure data. The object of the invention, to find an improved exposure control in direct exposure methods for two-dimensional structures in photosensitive layers which permits a registration of target marks independent from defined locations of the target marks, is met according to the invention in that a plurality of entocentric cameras are arranged in a registration unit (1) in linear alignment transverse to the one-dimensional movement of the substrate (2) to form a gapless linear scanning area (23) over a predetermined width of the substrate (2). The angles of view of adjacent entocentric cameras have an overlapping region along the linear scanning area (23) in which redundant image captures of the substrate (2) of the adjacent cameras (11) are detectable, and the computing unit (5) has means for calculating the position of the target marks from the redundant image captures of the adjacent entocentric cameras additionally using a height position of the target marks which is determined by triangulation of a distance of the substrate surface (21).

The invention discloses a sub-nanoscale high-precision lithography writing field stitching method. A photosensitive resist layer is coated on the surface of the wafer to be exposed; after the surface of the photosensitive resist layer is exposed, the exposed pattern will generate a tiny concave-convex structure; the concave-convex structure patterns are identified with a nano contact sensor and can be used as in-situ alignment coordinate markers; by comparing the position coordinates of the writing field before and after exposure and wafer moving, the deviations of stitching can be calculated, and an high-precision lithography stitching of the wafer is performed in a negative feedback control mode, so that the disadvantages of the existing non-in-situ, far-from-writing field and the poor performance of stitching precision in blind type open-loop lithography technology due to the influence of mechanical motion precision of a wafer workbench and long-time drift of an electron beam are overcome.

A direct write exposure apparatus configured to process a plurality of substrates, the apparatus including: a substrate holder configured to hold a substrate having a usable patterning area; a patterning system configured to project different patterns onto the substrate; a processing system configured to: determine a first combination of one or more patterns that are to be applied on a first substrate of the plurality of substrates; and determine a second, different combination of one or more patterns that are to be applied on a second, subsequent, substrate of the plurality of substrates.

The present invention quickly calculates values of optimal excitation parameters which are set in lenses in multiple stages. A multi charged particle beam adjustment method includes forming a multi charged particle beam, calculating, for each of lenses in two or more stages disposed corresponding to object lenses in two or more stages, a first rate of change and a second rate of change in response to change in at least an excitation parameter, the first rate of change being a rate of change in a demagnification level of a beam image of the multi charged particle beam, the second rate of change being a rate of change in a rotation level of the beam image, and calculating a first amount of correction to the excitation parameter of each of the lenses based on an amount of correction to the demagnification level and the rotation level of the beam image, the first rate of change, and the second rate of change.

An offset alignment method for a micro-lithographic printing device comprises placing (S10) of an alignment target substrate. A target pattern presents areas of at least two different light reflectivities is defined relative an origin point. The alignment target substrate is illuminated (S20). Reflected light is measured (S30). A reflection image of the target pattern is created (S40) by the measured light. The illumination is made according to a test pattern of light, having areas with and without illumination. The test pattern is defined relative an origin point. A measured target pattern origin point is determined (S50) from target pattern associated features in the reflection image and a measured test pattern origin point is determined from test patterns associated features in the reflection image. An offset between a measured position and a written position is calculated (S60) from the measured target pattern origin point and the measured test pattern origin point.

Various embodiments provide alignment devices and methods of manufacturing and methods of using alignment devices. In an example embodiment, an alignment device includes a first substrate comprising inputs at respective input positions, outputs at respective output positions, and waveguides configured to provide optical paths from respective inputs to respective outputs. The respective input positions are fabricated in accordance with an input position array determined based on measured positions of optical fiber cores of optical fibers secured to a coupling element array. The coupling element array comprises a plurality of coupling elements having a respective one of the optical fibers secured therein. Each optical fiber is associated with a respective input and the input position array indicates the position of each respective input. The respective output positions are configured to provide respective optical signals to the respective target locations of the receiving device.

A maskless, extreme ultraviolet (EUV) lithography scanner uses an array of microlenses, such as binary-optic, zone-plate lenses, to focus EUV radiation onto an array of focus spots (e.g. about 2 million spots), which are imaged through projection optics (e.g., two EUV mirrors) onto a writing surface (e.g., at 6× reduction, numerical aperture 0.55). The surface is scanned while the spots are modulated to form a high-resolution, digitally synthesized exposure image. The projection system includes a diffractive mirror, which operates in combination with the microlenses to achieve point imaging performance substantially free of geometric and chromatic aberration. Similarly, a holographic EUV lithography stepper can use a diffractive photomask in conjunction with a diffractive projection mirror to achieve substantially aberration-free, full-field imaging performance for high-throughput, mask-projection lithography. Maskless and holographic EUV lithography can both be implemented at the industry-standard 13.5-nm wavelength, and could potentially be adapted for operation at a 6.7-nm wavelength.

A system for exposing a material with images includes an exposure table and an electronic light projector arranged above the exposure table. The system is adapted to project images towards a material arranged at the exposure table. The electronic light projector and the exposure table are configured to be moved relative to each other during exposure. The electronic light projector is connected to a projector control unit configured to provide a sequence of images to be exposed represented by image data and superimpose a static image pattern onto the edge sections of the images to be exposed, resulting in a sequence of combined images. The width of the static image pattern is slimmer than the image to be exposed. The electronic light projector is configured to expose the combined images sequentially onto the material.

A pattern drawing device is provided with: a first cylindrical lens on which a beam from a light source device is incident and which has an anisotropic refractive power for converging, in a sub-scanning direction orthogonal to a main scanning direction, the beam traveling toward a reflection surface of a polygon mirror; an fθ lens system for causing the beam having been deflected by the reflection surface of the polygon mirror to be incident thereon, and for condensing the beam as a spot light on a surface of an object to be irradiated; and a second cylindrical lens having an anisotropic refractive power for converging, in the sub-scanning direction, the beam traveling toward the surface after being emitted from the fθ lens system.

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with an actively-focused laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.