A manufacturing method of a template includes: providing a base; forming a photoresist pattern on the base and patterning the base by using the photoresist pattern as a mask, and the forming the photoresist pattern includes: forming a plurality of first patterns spaced apart from each other on the base; forming a first material layer on the plurality of first patterns; patterning the at least one first pattern by using the first material layer as a mask so that the first pattern is formed into at least one first sub-pattern; and removing the first material layer; and the first material layer at least cover one side of at least one of the plurality of first patterns in a direction perpendicular to a surface on which the base is located.

Disclosed are systems and methods for achieving sub-diffraction limit resolutions in lithography. In one embodiment, a lithography system is disclosed. The system includes, a first light source, configured to generate excitation laser beams; a second light source, configured to generate depletion laser beams; one or more scattering mediums configured to receive one or more of the excitation laser beams and depletion laser beams and scramble the laser beams; one or more wave-front shaping modules, configured to receive the scrambled laser beams, descramble the laser beams and generate one or more focused laser beams; a numerical aperture device configured to receive the one or more focused laser beams and generate a focused point on a substrate.

Disclosed are systems and methods for achieving sub-diffraction limit resolutions for fabrication of integrated circuits using multiphoton lithography. In one embodiment, a photolithography system is disclosed. The system includes a light source, which can generate and emit laser beams at various wavelengths; a reflector configured to receive the laser beams and focus the laser beams on a condensing lens; a scattering medium, configured to receive the laser beams and generate scattered laser beams; and a wave-front shaping module, configured to receive the scattered laser beams and generate a focused laser beam in a photoresist material deposited on a silicon wafer.

A particle detection method detects presence and location of particles on a target using measured signals from a plurality of structured illumination patterns. The particle detection method uses measured signals obtained by illuminating the target with structured illumination patterns to detect particles. Specifically, the degree of variation in these measured signals in raw images is calculated to determine whether a particle is present on the target at a particular area of interest.

The present application discloses a semiconductor device with a grating structure. The semiconductor device includes a first target positioned on a first layer and including a plurality of line features spaced equally apart from each other according to a first pitch; and a second target positioned on a second layer and including a plurality of line features spaced equally apart from each other according to a second pitch. The first layer is different from the second layer. The first target and the second target do not overlap with each other. The first target is configured to generate an interference pattern when being illuminated by a lens including a grating configured thereon. The second target is configured to generate an interference pattern when being illuminated by the lens including the grating configured thereon.

A system and method for patterning of a substrate at sub-micron length scales using interference lithography that includes a substrate; a chuck that promotes substrate motion; at least two EM beams; a beam phase controller, wherein the phase controller modifies phases of the EM beams with respect to each other creating an interference pattern; a displacement sensor that measures the substrate displacement; and a feedback control mechanism configured to monitor and synchronize the substrate motion with the interference pattern using the beam phase controller and the displacement sensor.

A lighting device and method for manufacturing the lighting device are provided. A substrate contains at least a first surface and a second surface opposing the first surface. Light-sensitive material is provided on the first surface and/or the second surface. The light-sensitive material is exposed to light by applying the light from a light source onto a mask having a periodic pattern of light-attenuating features with interspaced light-permeable features. The light forms a periodic distribution of high intensity regions with interspaced low intensity regions at the first surface and/or the second surface. A periodic structure is formed based on the exposed light-sensitive material and includes light-attenuating features and light-permeable features corresponding to the light-attenuating features and light-permeable features of the mask.

Embodiments described herein provide a method of large area lithography. One embodiment of the method includes projecting at least one incident beam to a mask in a propagation direction of the at least one incident beam. The mask having at least one period of a dispersive element that diffracts the incident beam into order mode beams having one or more diffraction orders with a highest order N greater than 1. The one or more diffraction orders provide an intensity pattern in a medium between the mask and a substrate having a photoresist layer disposed thereon. The intensity pattern includes a plurality of intensity peaks defined by sub-periodic patterns of the at least one period. The intensity peaks write a plurality of portions in the photoresist layer such that a number of the portions in the photoresist layer corresponding to the at least one period is greater than N.

Embodiments described herein provide a method of large area lithography to decrease widths of portions written into photoresists. One embodiment of the method includes projecting an initial light beam of a plurality of light beams at a minimum wavelength to a mask in a propagation direction of the plurality of light beams. The mask has a plurality of dispersive elements. A wavelength of each light beam of the plurality of light beams is increased until a final light beam of the plurality of light beams is projected at a maximum wavelength. The plurality of dispersive elements of the mask diffract the plurality of light beams into order mode beams to produce an intensity pattern in a medium between the mask and a substrate having a photoresist layer disposed thereon. The intensity pattern having a plurality of intensity peaks writes a plurality of portions in the photoresist layer.

A method for printing a periodic pattern of linear features into a photosensitive layer which includes providing a mask bearing a pattern of linear features, arranging the substrate parallel to the mask, generating an elongated beam for illuminating the mask with a range of angles of incidence in a plane parallel to the linear features and with a uniform power per incremental distance along the length of the beam except at its ends where the power per incremental distance falls to zero according to first and second profiles over a fall-off distance, and scanning the beam in first and second sub-exposures to print first and second parts of the desired pattern such that the first and second parts overlap by the fall-off distance. The first and second profiles are selected so that their summation across the fall-off distance produces a uniform power per incremental distance.