A method of driving a spatial light modulator includes: setting, in an array of mirror elements, mirror elements in a first state for turning incident light into reflected light with the same phase as that of the incident light or with a phase different by a first phase from that of the incident light and mirror elements in a second state for turning incident light into reflected light with a phase different approximately 180 from the first phase to an arrangement with a first phase distribution; and setting, in the array of mirror elements, the first mirror elements and the second mirror elements to an arrangement with a second phase distribution which is an inversion of the first phase distribution.

Provided is a process including: obtaining a layout specifying, at least in part, a pattern to be transferred to a substrate via a patterning process and an etch process; and modifying, with one or more processors, the layout to include an etch-assist feature that is larger than a resolution limit of the patterning process and smaller than a resolution limit of the etch process, the etch-assist feature being configured to reduce a bias of the patterning process or the etch process, to reduce an etch induced shift of a feature in the layout due to the etch process, or to expand a process window of another patterning process.

A circuit board has a dielectric core, a foil top surface, and a thin foil bottom surface with a foil backing of sufficient thickness to absorb heat from a laser drilling operation to prevent the penetration of the thin foil bottom surface during laser drilling. A sequence of steps including a laser drilling step, removing the foil backing step, electroless plating step, patterned resist step, electroplating step, resist strip step, tin plate step, and copper etch step are performed, which provide dot vias of fine linewidth and resolution.

A method of correcting an optical image formed by an optical system, the method including obtaining a map indicative of a polarization dependent property of the optical system across a pupil plane of the optical system for each spatial position in an image plane of the optical system, combining the map indicative of the polarization dependent property of the optical system with a radiation map of the intensity and polarization of an input radiation beam to form an image map, and using the image map to correct an optical image formed by directing the input radiation beam through the optical system.

A method of forming a pillar includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A layer under the island of photoresist material is etched to establish a pillar defined by the island of photoresist material.

An exposure method includes, in a case of exposing unmeasurable shots which are arranged linearly and whose focus value cannot be measured and a measurable shot which is adjacent to the unmeasurable shots and whose focus value can be measured, exposing alternately the measurable shot and the unmeasurable shots such that the unmeasurable shots are exposed using the focus value of the adjacent measurable shot exposed immediately before the unmeasurable shots.

A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.

Method and system configured to reduce or even nullify the degradation of images created by the projector tool turns on the optimization of the pattern-imaging by adjusting parameters and hardware of the projector to judiciously impact the placement of various image edges at different locations in the image field. Adjustments to the projector (exposure tool) include a change of a setup parameter of the exposure tool and/or scanning synchronization and/or a change of a signature of the optical system of the exposure tool determined as a result of minimizing the pre-determined cost function(s) that are parts of a comprehensive edge-placement error model.

Systems and methods are disclosed herein for enhancing lithography printability, and in particular, for enhancing image contrast. An exemplary method includes receiving an integrated circuit (IC) design layout and generating an exposure map based on the IC design layout. The IC design layout includes a target pattern to be formed on a workpiece, and the exposure map includes an exposure grid divided into dark pixels and bright pixels that combine to form the target pattern. The method further includes adjusting the exposure map to increase exposure dosage at edges of the target pattern. In some implementations, the adjusting includes locating an edge portion of the target pattern in the exposure map, where the edge portion has a corresponding bright pixel, and assigning exposure energy from at least one dark pixel to the corresponding bright pixel, thereby generating a modified exposure map.

A lithographic apparatus comprising a support structure configured to be moved by a first scan distance during a single scanning operation when supporting a patterning device having a first extent in the scanning direction and to be moved by a second scan distance during a single scanning operation when supporting a patterning device having a second extent in the scanning N direction, and a substrate table configured to be moved by a third scan distance during a single scanning operation when the support structure supports a patterning device having the first extent in the scanning direction and to be moved by a fourth scan distance during a single scanning operation when the support structure supports a patterning device having the second extent in the scanning direction.