Maskless lithographic apparatus measuring accumulated amount of light is provided. The maskless lithographic apparatus includes a light source which emits light, a stage on which a substrate is disposed, an optical system which converts the light into a beam spot array including a plurality of columns and a plurality of rows and irradiates the beam spot array onto the stage, a slit to which the beam spot array is irradiated and which passes an nth (n is a natural number) row of the beam spot array, an optical sensor which senses the nth row of the beam spot array which has passed through the slit, and a measuring unit which measures an accumulated amount of light in the nth row of the beam spot array sensed by the optical sensor

A lithographic apparatus and associated method of controlling a lithographic process. The lithographic apparatus has a controller configured to define a control grid associated with positioning of a substrate within the lithographic apparatus. The control grid is based on a device layout, associated with a patterning device, defining a device pattern which is to be, and/or has been, applied to the substrate in a lithographic process.

A lithographic system comprises a radiation source and a lithographic apparatus. The radiation source provides radiation to the lithographic apparatus. The lithographic apparatus uses the radiation for imaging a pattern onto multiple target areas on a layer of photo-resist on a semiconductor substrate. The imaging requires a pre-determined dose of radiation. The system is controlled so as to set a level of a power of the radiation in dependence on a magnitude of the pre-determined dose.

A double-sided digital lithography or exposure system and method are provided. The system includes a first optical engine 110 for exposing a front side of a substrate 910, a second optical engine 120 for exposing the back side of the substrate 910, a control system 710 for generating a first exposure pattern and a second exposure pattern aligned on the front and back surfaces of the substrate 910 based on the position information of the first optical engine 110 and the second optical engine 120, and controlling the first optical engine 110 and the second optical engine 120 to expose the front and back surfaces of the substrate 910 with the first exposure pattern and the second exposure pattern.

The present disclosure discloses a lithography process method for defining sidewall morphology of a lithography pattern, comprising: Step 1: designing a mask, wherein a mask pattern is formed on the mask, the mask pattern being used to define a lithography pattern; the lithography pattern has a sidewall, and a mask side face pattern structure that defines sidewall morphology of the lithography pattern is provided on the mask pattern, the mask side face pattern structure having a structure that enables an exposure light intensity to gradually change; Step 2: coating a to-be-exposed substrate with a photoresist; Step 3: exposing the photoresist by using the mask, and then performing development to form the lithography pattern; and Step 4: performing post-baking. The present disclosure can define the sidewall morphology of a lithography pattern, facilitating formation of a lithography pattern sidewall with an inclined side face.

Provided are an exposure method and an exposure device. The method includes: extracting an exposure rule of a first layer pattern or a previous layer pattern of each wafer in the current wafer group; acquiring the serial number of at least one absent wafer in the current wafer group according to actual exposure information of the current layer pattern of each wafer in the current wafer group; removing the serial number of at least one absent wafer in the exposure rule of the current layer pattern, sequentially advancing the serial number of a wafer having the serial number posterior to the serial number of each of the at least one absent wafer in a sequence corresponding to the same bearing platform, and filling serial number vacancies to obtain the exposure rule of the current layer pattern; and exposing the current layer pattern of each wafer in the current wafer group.

A circuit board has a dielectric core, a foil top surface, and a thin foil bottom surface with a foil backing of sufficient thickness to absorb heat from a laser drilling operation to prevent the penetration of the thin foil bottom surface during laser drilling. A sequence of steps including a laser drilling step, removing the foil backing step, electroless plating step, patterned resist step, electroplating step, resist strip step, tin plate step, and copper etch step are performed, which provide dot vias of fine linewidth and resolution.

A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.

A processing method in one embodiment includes: a step that takes an image of the end face of a reference substrate, whose warp amount is known, over the whole periphery thereof using a camera to obtain shape data of the end face of the reference substrate; a step that takes an image of the end face of a substrate over the whole periphery thereof using a camera to obtain shape data of the end face of the substrate; a step that calculates warp amount of the substrate based on the obtained shape data; a step that forms a resist film on a surface of the substrate; a step that determines the supply position from which an organic solvent is to be supplied to a peripheral portion of the resist film and dissolves the peripheral portion by the solvent supplied from the supply position to remove the same from the substrate.

A direct write exposure apparatus configured to process a plurality of substrates, the apparatus including: a substrate holder configured to hold a substrate having a usable patterning area; a patterning system configured to project different patterns onto the substrate; a processing system configured to: determine a first combination of one or more patterns that are to be applied on a first substrate of the plurality of substrates; and determine a second, different combination of one or more patterns that are to be applied on a second, subsequent, substrate of the plurality of substrates.