Embodiments described provide dynamic imaging systems that compensates for pattern defects resulting from distortion caused by warpage of the substrate. The methods and apparatus described are useful to create compensated exposure patterns. The dynamic imaging system includes an inspection system configured to provide 3D profile measurements and die shift measurements of the first substrate to the interface configured to provide compensated pattern data to the digital lithography system configured to receive the compensated pattern data from the interface and expose the photoresist with a compensated pattern.

A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.

A method of manufacturing a semiconductor device includes: providing a first photoresist pattern on a wafer; measuring an overlay of the first photoresist pattern; generating a first overlay model function by a first overlay regression analysis of the measured overlay; and generating a second overlay model function by a second overlay regression analysis of a difference between the measured overlay and the first overlay model function.

Systems and methods described herein relate to the manufacture of optical elements and optical systems. An example method includes overlaying a first mask on a photoresist material and a substrate, and causing a light source to illuminate the photoresist material through the first mask during a first exposure so as to define a first feature. During the first exposure, the light source is positioned at a non-normal angle with respect to a plane parallel to the substrate. The method includes developing the photoresist material so as to retain an elongate portion of the photoresist material on the substrate. A first end of the elongate portion includes an angled portion that is sloped at an angle with respect to a long axis of the elongate portion. The method also includes depositing a reflective material through a second mask onto the angled portion.

Methods, metrology modules and target designs are provided, which improve the accuracy of metrology measurements. Methods provide flexible handling of multiple measurement recipes and setups and enable relating them to landscape features that indicate their relation to resonance regions and to flat regions. Clustering of recipes, self-consistency tests, common processing of aggregated measurements, noise reduction, cluster analysis, detailed analysis of the landscape and targets with skewed cells are employed separately or in combination to provide cumulative improvements of measurement accuracy.

In a method of controlling a lithographic apparatus, historical performance measurements are used to calculate a process model relating to a lithographic process. Current positions of a plurality of alignment marks provided on a current substrate are measured and used to calculate a substrate model relating to a current substrate. Additionally, historical position measurements obtained at the time of processing the prior substrates are used with the historical performance measurements to calculate a model mapping. The model mapping is applied to modify the substrate model. The lithographic apparatus is controlled using the process model and the modified substrate model together. Overlay performance is improved by avoiding over- or under-correction of correlated components of the process model and the substrate model. The model mapping may be a subspace mapping, and dimensionality of the model mapping may be reduced, before it is used.

A coaxial reticle alignment device, a lithography apparatus and alignment methods are disclosed. The coaxial reticle alignment device includes: illumination modules (A, B), each configured to provide an alignment light beam; a projection objective (8) under a reticle (5); a reference plate (9) on a workpiece stage (12), configured to carry a reference mark (10); and an image detection and processing module (11) under the reference plate (9). The reference mark (10) is located within a FOV of the image detection and processing module (11), and during movement of the workpiece stage (12), the image detection and processing module (11) receives the alignment light beam having passed sequentially through the reticle alignment mark (6, 7), the projection objective (8) and the reference mark (10), it captures images of the reticle alignment mark (6, 7) and the reference mark (10) which are processed to derive relative positional information between the reticle alignment mark (6, 7) and the reference mark (10) that enables the alignment of the reticle (5) with the workpiece stage (12). The coaxial reticle alignment device adopts dedicated separate illumination means, has a simple structure, allows easy operation and improves alignment efficiency.

A method for manufacturing a structure on a substrate includes projecting an image of a reference pattern onto a substrate having a first patterned layer, the first patterned layer including first alignment marks and first overlay measurement marks, and the reference pattern including second alignment marks and second overlay measurement marks, aligning, based on the first alignment marks and the second alignment marks, the first patterned layer to the image of the reference pattern, obtaining a pre-overlay mapping of the first overlay measurement marks and the second overlay measurement marks, and determining compensation data indicative of information of the pre-overlay mapping of the first overlay measurement marks and the second overlay measurement marks.

In a method executed in an exposure apparatus, a focus control effective region and a focus control exclusion region are set based on an exposure map and a chip area layout within an exposure area. Focus-leveling data are measured over a wafer. A photo resist layer on the wafer is exposed with an exposure light. When a chip area of a plurality of chip areas of the exposure area is located within an effective region of a wafer, the chip area is included in the focus control effective region, and when a part of or all of a chip area of the plurality of chip areas is located on or outside a periphery of the effective region of the wafer, the chip area is included in the focus control exclusion region In the exposing, a focus-leveling is controlled by using the focus-leveling data measured at the focus control effective region.

An exposure method includes exposing a substrate to form a first pattern on a first layer, measuring a first alignment value of the first pattern, generating first correction data by using the first alignment value, storing the first correction data and exposing the substrate to form a second pattern on a second layer disposed on the first layer by using the first correction data.