A mark detection apparatus is configured to detect a mark formed in a mark area of an object and has: a first optical system configured to emit a first measurement light to the mark area; a second optical system configured to irradiate the mark area with at least one part of a zeroth-order light and a diffracted light generated by an irradiation to the mark area from the first optical system; and a light receiver that configured to optically receive at least one part of a zeroth-order light and a diffracted light generated by an irradiation to the mark area from the second optical system.

A substrate stage apparatus provided with: a substrate holder that can be moved in a plane including an X-axis and a Y-axis; a head unit that can be moved synchronously with the substrate holder along the Y-axis; an encoder system for measuring substrate position, the system including a scale disposed on the substrate holder, and heads disposed on the head unit, and acquiring the X-axis direction and the Y-axis direction position information of the substrate holder on the basis of the output of the heads; an encoder system for measuring head-unit position, the system acquiring the Y-axis direction position information of the head unit; and a position control system that controls the position of the substrate holder within the XY plane on the basis of the output of the encoder system for measuring substrate position and the encoder system for measuring head-unit position.

As increasing numbers of layers, using increasing numbers of specific materials, are deposited on substrates, it becomes increasingly difficult to detect alignment marks accurately for, for example, applying a desired pattern onto a substrate using a lithographic apparatus, in part due to one or more of the materials used in one or more of the layers being wholly or partially opaque to the radiation used to detect alignment marks. In a first step, the substrate is illuminated with excitation radiation. In a second step, at least one effect associated with a reflected material effect scattered by a buried structure is measured. The effect may, for example, include a physical displacement of the surface of the substrate. In a third step, at least one characteristic of the structure based on the measured effect is derived.

For the purposes of measuring structures of a microlithographic mask, a method for capturing absolute positions of structures on the mask and a method for determining structure-dependent and/or illumination-dependent contributions to the position of an image of the structures to be imaged, or of the edges defining this structure, are combined with one another. As a result of this, establishing an edge placement error that is relevant to the exposure of a wafer and, hence, a characterization of the mask can be substantially improved.

A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

A movable body apparatus includes: a substrate holder which can move in the X-axis and Y-axis directions; a Y coarse movement stage which can move in the Y-axis direction; a first measurement system which acquires position information on the substrate holder by heads on the substrate holder and a scale on the Y coarse movement stage; a second measurement system which acquires position information on the Y coarse movement stage by heads on the Y coarse movement stage and a scale; and a control system which controls the position of the substrate holder based on position information acquired by the first and second measurement systems. The first measurement system irradiates a measurement beam while moving the heads in the X-axis direction with respect to the scale, and the second measurement system irradiates a measurement beam while moving the heads in the Y-axis direction with respect to the scale.

An apparatus for determining a characteristic of a feature of an object comprises: a measurement radiation source; a measurement radiation delivery system; a measurement system; a pump radiation source; and a pump radiation delivery system. The measurement radiation source is operable to produce measurement radiation and the measurement radiation delivery system is operable to irradiate at least a part of a top surface of the object with the measurement radiation. The measurement system is operable to receive at least a portion of the measurement radiation scattered from the top surface and is further operable to determine a characteristic of the feature of the object from at least a portion of the measurement radiation scattered from the top surface. The pump radiation source is operable to produce pump radiation and the pump radiation delivery system is operable to irradiate at least a part of the top surface of the object with the pump radiation so as to produce a mechanical response (for example an acoustic wave) in the object.

Two pairs of alignment targets (one aligned, one misaligned by a bias distance) are formed on different masks to produce a first pair of conjugated interference patterns. Other pairs of alignment targets are also formed on the masks to produce a second pair of conjugated interference patterns that are inverted the first. Misalignment of the dark and light regions of the first interference patterns and the second interference patterns in both pairs of conjugated interference patterns is determined when patterns formed using the masks are overlaid. A magnification factor (of the interference pattern misalignment to the target misalignment) is calculated as a ratio of the difference of misalignment of the relatively dark and relatively light regions in the pairs of interference patterns, over twice the bias distance. The interference pattern misalignment is divided by the magnification factor to produce a self-referenced and self-calibrated target misalignment amount, which is then output.

In a method of determining an edge roughness parameter of a periodic structure, the periodic structure is illuminated (602) in an inspection apparatus. The illumination radiation beam may comprise radiation with a wavelength in the range 1 nm to 100 nm. A scattering signal (604) is obtained from a radiation beam scattered from the periodic structure. The scattering signal comprises a scattering intensity signal that is obtained by detecting an image of a far-field diffraction pattern in the inspection apparatus. An edge roughness parameter, such as Lined Edge Roughness and/or Line Width Roughness is determined (606) based on a distribution of the scattering intensity signal around a non-specular diffraction order. This may be done for example using a peak broadening model.

The present invention provides an imprint apparatus comprising a deforming unit configured to deform a pattern surface by applying a force to a mold, a measuring unit configured to measure a deformation amount of the pattern surface, a control unit configured to control the measuring unit to measure the deformation amount in each of a plurality of states in which a plurality of the forces are applied to the mold, a calculation unit configured to calculate a rate of change in the deformation amount as a function of a change in the force applied to the mold, and a calibration unit configured to calibrate a control profile describing a time in the imprint process, and the force applied to the mold, based on the rate of change in the deformation amount.