Provided is a detection apparatus having a high detection accuracy.

A detection apparatus comprises an optical element arranged at a position optically conjugate to a target surface, including a first region for forming illumination light that illuminates the target surface with a first angle distribution and a second region for forming illumination light that illuminates the target surface with a second angle distribution, a measurement mark arranged at the target surface; and a detector for detecting a deviation direction and a deviation amount of the optical element based on reflection light from the measurement mark illuminated by the first region and the second region of the optical element.

Embodiments of the present disclosure provide a substrate measuring device in a lithography projection apparatus that provides multiple light sources having different wavelengths. In some embodiments, a lithography projection apparatus includes a substrate measuring system disposed proximate to a substrate stage, the substrate measuring system further including an emitter including multiple light sources configured to provide multiple beams of light, each of at least some of the multiple beams of light having a different wavelength, at least one optical fiber, wherein each of respective portions of the at least one optical fiber is configured to pass a respective one of the multiple beams of light, and a receiver positioned to collected light emitted from the emitter and reflected off of a substrate disposed on the substrate stage.

Disclosed is a metrology apparatus for use in a lithographic manufacturing process. The metrology apparatus comprises a radiation source comprising a drive laser having an output split into a plurality of optical paths, each comprising a respective broadband light generator. The metrology apparatus further comprises illumination optics for illuminating a structure, at least one detection system for detecting scattered radiation, having been scattered by the structure and a processor for determining a parameter of interest of the structure from the scattered radiation.

Embodiments of the present disclosure provide a substrate measuring device in a lithography projection apparatus that provides multiple light sources having different wavelengths. In some embodiments, a lithography projection apparatus includes a substrate measuring system disposed proximate to a substrate stage, the substrate measuring system further including an emitter including multiple light sources configured to provide multiple beams of light, each of at least some of the multiple beams of light having a different wavelength, at least one optical fiber, wherein each of respective portions of the at least one optical fiber is configured to pass a respective one of the multiple beams of light, and a receiver positioned to collected light emitted from the emitter and reflected off of a substrate disposed on the substrate stage.

An illumination source apparatus (500), suitable for use in a metrology apparatus for the characterization of a structure on a substrate, the illumination source apparatus comprising: a high harmonic generation, HHG, medium (502); a pump radiation source (506) operable to emit a beam of pump radiation (508); and adjustable transformation optics (510) configured to adjustably transform the transverse spatial profile of the beam of pump radiation to produce a transformed beam (518) such that relative to the centre axis of the transformed beam, a central region of the transformed beam has substantially zero intensity and an outer region which is radially outwards from the centre axis of the transformed beam has a non-zero intensity, wherein the transformed beam is arranged to excite the HHG medium so as to generate high harmonic radiation (540), wherein the location of said outer region is dependent on an adjustment N setting of the adjustable transformation optics.

Disclosed is a metrology sensor apparatus comprising: an illumination system operable to illuminate a metrology mark in on a substrate with illumination radiation; an optical collection system configured to collect scattered radiation, following scattering of the illumination radiation by the metrology mark; and a wavelength dependent spatial filter for spatially filtering the scattered radiation, the wavelength dependent spatial filter having a spatial profile dependent on the wavelength of the scattered radiation. The wavelength dependent spatial filter may comprise a dichroic filter operable to substantially transmit scattered radiation within a first wavelength range and substantially block scattered radiation within a second wavelength range and at least one second filter operable to substantially block scattered radiation at least within the first wavelength range and the second wavelength range.

The invention provides a position sensor (300) which comprises an optical system (305, 306) configured to provide measurement radiation (304) to a substrate (307). The optical system is arranged to receive at least a portion of radiation (309) diffracted by a mark (308) provided on the substrate. A processor (313) is applied to derive at least one position-sensitive signal (312) from the received radiation. The measurement radiation comprises at least a first and a second selected radiation wavelength. The selection of the at least first and second radiation wavelengths is based on a position error swing-curve model.

A spectroscopic overlay metrology system and corresponding spectroscopic overlay metrology methods are disclosed herein for improving overly measurement accuracy, optimizing overlay recipes, and/or minimizing (or eliminating) asymmetry-induced overly error from overlay measurements. An exemplary method includes generating a diffraction spectrum by an overlay target from incident radiation having more than one wavelength. The diffraction spectrum includes a plurality of positive ordered diffracted beams and a plurality of negative ordered diffracted beams that are separated by wavelength, such that the diffraction spectrum includes more than one wavelength of a positive order and a negative order. The method further includes collecting intensity information associated with the diffraction spectrum generated by the overlay target from the incident radiation, and generating overlay information from the collected intensity information, where the overlay information includes contributions from asymmetry-induced overlay error. In some implementations, the method includes optimizing an overlay recipe based on the generated overlay information.

A system includes a radiation source, first and second phased arrays, and a detector. The first and second phased arrays include optical elements, a plurality of ports, waveguides, and phase modulators. The optical elements radiate radiation waves. The waveguides guide radiation from a port of the plurality of ports to the optical elements. Phase modulators adjust phases of the radiation waves. One or both of the first and second phased arrays form a first beam and/or a second beam of radiation directed toward a target structure based on the port coupled to the radiation source. The detector receives radiation scattered by the target structure and generates a measurement signal based on the received radiation.

Optical components and methods of manufacture thereof. A first optical component has a hollow-core photonic crystal fiber includes internal capillaries for guiding radiation and an outer capillary sheathing the internal capillaries; and at least an output end section having a larger inner cross-sectional dimension over at least a portion of the output end section than an inner cross-sectional dimension of the outer capillary along a central portion of the hollow-core photonic crystal fiber prior to the output end section. A second optical component includes a hollow-core photonic crystal fiber and a sleeve arrangement.