A method of aligning a lithographic layer on a semiconductor wafer comprises forming, in a first side of the semiconductor wafer, a first alignment structure from one or more first trenches. In some embodiments, the trenches are formed to a depth reaching to within about three micrometers from the second side of the semiconductor wafer, for example. In others, the wafer is thinned after the first alignment structure is formed, so that the trenches then reach to within about three micrometers from the second side of the semiconductor wafer. At least one lithographic layer is aligned on a second side of the semiconductor wafer by detecting the first alignment structure from the second side, using illumination in the visible spectrum.

Position detection apparatus includes illumination optical system for illuminating target, detection optical system for forming image of the illuminated target illuminated on photoelectric converter, first array having first aperture stops, second array having second aperture stops, first driving mechanism for arranging the selected first aperture stop on pupil of the illumination optical system by driving the first array such that first aperture stop crossing optical axis of the illumination optical system moves in first direction, second driving mechanism for arranging the selected second aperture stop on pupil of the detection optical system by driving the second array such that second aperture stop crossing optical axis of the detection optical system moves in second direction. The first and second driving mechanisms fine-tune positions of the selected first and second aperture stops in the first and second directions, respectively.

The present invention provides a measurement apparatus that measures a position of an object, including an illumination system configured to illuminate the object with illumination light, an image forming system configured to form, on a photoelectric conversion device configured to detect an image of the object, an image of detected light from the object, and a separation system including a reflective polarizer and a λ/4 plate arranged between the illumination system and the image forming system, and configured to separate the illumination light and the detected light via the reflective polarizer and the λ/4 plate, wherein the separation system includes at least one optical member arranged between the reflective polarizer and the λ/4 plate, and each of the illumination system and the image forming system includes a transmission polarizer.

A patterning device alignment system including a multipath sensory array including a first collimating light path and one or more other light paths, a first detector positioned at a first end of the first collimating light path, and a second detector positioned at a first end of the one or more other light paths, the first detector configured to receive a reflected illumination beam from an illuminated patterning device and calculate a tilt parameter of the patterning device, and the second detector configured to receive a second reflected illumination beam from a beam splitter and calculate an X-Y planar location position and a rotation position of the patterning device.

An alignment apparatus includes an illumination system configured to direct one or more illumination beams towards an alignment target and receive the diffracted beams from the alignment target. The alignment apparatus also includes a self-referencing Interferometer configured to generate two diffraction sub-beams, wherein the two diffraction sub-beams are orthogonally polarized, rotated 180 degrees with respect to each other around an alignment axis, and spatially overlapped. The alignment apparatus further includes a beam analyzer configured to generate interference between the overlapped components of the diffraction sub-beams and produce two orthogonally polarized optical branches, and a detection system configured to determine a position of the alignment target based on light intensity measurement of the optical branches, wherein the measured light intensity is temporally modulated by a phase modulator.

An offset alignment method for a micro-lithographic printing device comprises placing (S10) of an alignment target substrate. A target pattern presents areas of at least two different light reflectivities is defined relative an origin point. The alignment target substrate is illuminated (S20). Reflected light is measured (S30). A reflection image of the target pattern is created (S40) by the measured light. The illumination is made according to a test pattern of light, having areas with and without illumination. The test pattern is defined relative an origin point. A measured target pattern origin point is determined (S50) from target pattern associated features in the reflection image and a measured test pattern origin point is determined from test patterns associated features in the reflection image. An offset between a measured position and a written position is calculated (S60) from the measured target pattern origin point and the measured test pattern origin point.

A patterning device alignment system including a multipath sensory array including a first collimating light path and one or more other light paths, a first detector positioned at a first end of the first collimating light path, and a second detector positioned at a first end of the one or more other light paths, the first detector configured to receive a reflected illumination beam from an illuminated patterning device and calculate a tilt parameter of the patterning device, and the second detector configured to receive a second reflected illumination beam from a beam splitter and calculate an X-Y planar location position and a rotation position of the patterning device.

An alignment method includes directing an illumination beam with a varying wavelength or frequency towards an alignment target, collecting diffraction beams from the alignment target and directing towards an interferometer. The alignment method also includes producing, by the interferometer, two diffraction sub-beams from the diffraction beams, wherein the diffraction sub-beams are orthogonally polarized, rotated 180 degrees with respect to each other around an alignment axis, and spatially overlapped. The alignment method further includes measuring interference intensity of the diffraction beams based on a temporal phase shift, wherein the temporal phase shift is a function of the varying wavelength or frequency of the illumination beam and a fixed optical path difference between the diffraction beams. The alignment method also includes determining a position of the alignment target from the measured interference intensity.

An apparatus for and method of determining the alignment of a substrate in which a multiple alignment marks are simultaneously illuminated with spatially coherent radiation and the light from the illuminated marks is collected in parallel to obtain information on the positions of the marks and distortions within the marks.

Provided is a lithography apparatus capable of detecting the abnormal holding of an original in a shorter period of time. The lithography apparatus is configured to form a pattern on a substrate through use of the original, and includes: a holding unit configured to hold the original on which a first mark is formed; a measuring unit configured to pick up an image of the first mark; and a control unit configured to: cause the measuring unit to obtain the image of the first mark on the original held by the holding unit with a focus position of the measuring unit being adjusted to a reference position; and determine that the original is being abnormally held by the holding unit when a change in a first contrast, which is a contrast of the image of the first mark with respect to a reference contrast, falls out of an allowable range.