A method includes receiving a wafer, measuring a surface topography of the wafer; calculating a topographical variation based on the surface topography measurement performing a single-zone alignment compensation when the topographical variation is less than a predetermined value or performing a multi-zone alignment compensation when the topographical variation is greater than the predetermined value; and performing a wafer alignment according to the single-zone alignment compensation or the multi-zone alignment compensation.

Performance measurement targets are used to measure performance of a lithographic process after processing a number of substrates. In a set-up phase, the method selects an alignment mark type and alignment recipe from among a plurality of candidate mark types by reference to expected parameters of the patterning process. After exposing a number of test substrates using the patterning process, a preferred metrology target type and metrology recipe are selected by comparing measured performance (e.g. overlay) of performance of the patterning process measured by a reference technique. Based on the measurements of position measurement marks and performance measurement targets after actual performance of the patterning process, the alignment mark type and/or recipe may be revised, thereby co-optimizing the alignment marks and metrology targets. Alternative run-to-run feedback strategies may also be compared during subsequent operation of the process.

A lithographic cluster includes a track unit and a lithographic apparatus. The lithographic apparatus includes an alignment sensor and at least one controller. The track unit is configured to process a first lot and a second lot. The lithographic apparatus is operatively coupled to the track unit. The alignment sensor is configured to measure an alignment of at least one alignment mark type of a calibration wafer. At least one controller is configured to determine a correction set for calibrating the lithographic apparatus based on the measured alignment of the at least one alignment mark type and apply first and second weight corrections to the correction set for processing the first and second lots, respectively, such that overlay drifts or jumps during processing the first and second lots are mitigated.

An alignment system and method for aligning an object (O) having an object marker. An image of the object marker is projected onto an imaging sensor (11) having sensor elements. At least one reference marker is projected onto the imaging sensor (11). Based on image output (111) from the imaging sensor (11), respective subsets of sensor elements are determined. Based on a first subset of the sensor elements, a marker position is determined where the image of the object marker is projected onto the imaging sensor (11). Based on a second subset (Sr) of the sensor elements, a reference position is determined where the reference marker is projected onto the imaging sensor (11). The marker position correlates with a position (Xm,Ym) of the object (O) whereas the reference position does not. The object position (Xm,Ym) is determined based on the marker position relative to the reference position.

The present invention provides a pattern forming apparatus including a detection optical system configured to obtain optical information of a mark provided on a substrate by detecting the mark, and a processing unit configured to perform a process of obtaining a position of the mark by using a template for obtaining the position of the mark by being applied to the optical information of the mark and a window which indicates a region for extracting an amount of characteristic indicating the position of the mark from a waveform signal obtained from the optical information, wherein the processing unit decides, based on the optical information of the mark obtained by the detection optical system, a parameter indicating at least one of a shape of the template and a shape of the window for each of a plurality of substrates.

A method includes receiving a wafer, defining a plurality of zones over the wafer, performing a multi-zone alignment compensation for each of the plurality of zones according to an equation along a first direction to obtain a plurality of compensation values for each of the plurality of zones, and performing a wafer alignment and a lithography exposure for each of the plurality of zones according to the plurality of compensation values. The wafer alignment and the lithography exposure are performed zone-by-zone.

A lithographic cluster includes a track unit and a lithographic apparatus. The lithographic apparatus includes an alignment sensor and at least one controller. The track unit is configured to process a first lot and a second lot. The lithographic apparatus is operatively coupled to the track unit. The alignment sensor is configured to measure an alignment of at least one alignment mark type of a calibration wafer. At least one controller is configured to determine a correction set for calibrating the lithographic apparatus based on the measured alignment of the at least one alignment mark type and apply first and second weight corrections to the correction set for processing the first and second lots, respectively, such that overlay drifts or jumps during processing the first and second lots are mitigated.

An imprint apparatus for forming a pattern of an imprint material on a substrate using a mold having a mesa including a pattern region where a pattern and a mark are formed. The apparatus includes an alignment optical system which includes an illumination system configured to illuminate the mark with illumination light and a detecting system configured to detect an image of the mark illuminated by the illumination system. The illumination system includes a limiter configured to limit incidence of the illumination light to a side of the mesa, a ridge line of the mesa, and an outer region of the side.

A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

An imprint apparatus for forming a pattern of an imprint material on a substrate using a mold includes a plurality of alignment scopes and a control unit. The control unit controls aligning of a shot region of the substrate and the mold based on outputs from the plurality of alignment scopes. Each of the plurality of alignment scopes outputs information indicating a relative position of a first mark selected from a plurality of first marks in the shot region and a second mark selected from a plurality of second marks on the mold. The control unit controls aligning of the shot region and the mold based on information excluding incorrect information from a plurality of pieces of information output from the plurality of alignment scopes.