A temperature conditioning system for a lithographic apparatus. Temperature variations in an object cause object deformation which prevents the object being accurately positioned. Temperature condition systems use conduit systems, provided with fluid, in or on the object to control the temperature of the object to reduce object deformation. In this way, parts of the object can be more accurately positioned. However, acceleration of the object and the temperature conditioning system induces variation in pressure within the fluid inside the conduit system on or in the object, which may also cause object deformation. To provide an improved conduit system, the lithographic apparatus further includes a control system which is used to control the movement of the object based on measurements indicating pressure variation in the conduit.

A charged particle beam apparatus includes a charged particle source configured to generate charged particles, an electrode configured to accelerate the charged particles to form a charged particle beam, a bender unit configured to adjust a path of the charged particle beam, and an objective lens configured to focus the charged particle beam onto a spot on a sample. The charged particle beam passes through a bore of the objective lens as the charged particle beam propagates from the charged particle source to the sample. The apparatus also includes a light source configured to generate a light beam, and a mirror disposed within the bender unit and arranged to direct the light beam to the spot on the sample.

Performance measurement targets are used to measure performance of a lithographic process after processing a number of substrates. In a set-up phase, the method selects an alignment mark type and alignment recipe from among a plurality of candidate mark types by reference to expected parameters of the patterning process. After exposing a number of test substrates using the patterning process, a preferred metrology target type and metrology recipe are selected by comparing measured performance (e.g. overlay) of performance of the patterning process measured by a reference technique. Based on the measurements of position measurement marks and performance measurement targets after actual performance of the patterning process, the alignment mark type and/or recipe may be revised, thereby co-optimizing the alignment marks and metrology targets. Alternative run-to-run feedback strategies may also be compared during subsequent operation of the process.

A charged particle beam apparatus includes a charged particle source configured to generate charged particles, an electrode configured to accelerate the charged particles to form a charged particle beam, a bender unit configured to adjust a path of the charged particle beam, and an objective lens configured to focus the charged particle beam onto a spot on a sample. The charged particle beam passes through a bore of the objective lens as the charged particle beam propagates from the charged particle source to the sample. The apparatus also includes a light source configured to generate a light beam, and a mirror disposed within the bender unit and arranged to direct the light beam to the spot on the sample.

One embodiment of the instant disclosure provides a semiconductor structure that comprises: a first device layer including a first active layer disposed over a substrate and a first gate layer disposed on the active layer, where at least one of the first active layer and the first gate layer includes a first layer alignment structure; a first bounding layer disposed over the first device layer, the first bounding layer including an opening arranged to detectably expose the first layer alignment structure; and a second device layer disposed over the bounding layer including a second layer alignment structure, where the second layer alignment structure is substantially aligned to the first layer alignment structure through the opening.

A lithographic apparatus is described, the apparatus comprising: an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; and a projection system configured to project the patterned radiation beam onto a target portion of the substrate, wherein the apparatus further comprises an alignment system configured to perform, for one or more alignment marks that are present on the substrate: a plurality of alignment mark position measurements for the alignment mark by applying a respective plurality of different alignment measurement parameters, thereby obtaining a plurality of measured alignment mark positions for the alignment mark; the apparatus further comprising a processing unit, the processing unit being configured to: determine, for each of the plurality of alignment mark position measurements, a positional deviation as a difference between an expected alignment mark position and a measured alignment mark position, the measured alignment mark position being determined based on the respective alignment mark position measurement; define a set of functions as possible causes for the positional deviations, the set of functions including a substrate deformation function representing a deformation of the substrate, and at least one mark deformation function representing a deformation of the one or more alignment marks; generating a matrix equation PD=M*F whereby a vector PD comprising the positional deviations is set equal to a weighted combination, represented by a weight coefficient matrix M, of a vector F comprising the substrate deformation function and the at least one mark deformation function, whereby weight coefficients associated with the at least one mark deformation function vary depending on applied alignment measurement; determining a value for the weight coefficients of the matrix M; determining an inverse or pseudo-inverse matrix of the matrix M, thereby obtaining a value for the substrate deformation function as a weighted combination of the positional deviations. applying the value of the substrate deformation function to perform an alignment of the target portion with the patterned radiation beam.

Methods for in-die overlay reticle measurement and the resulting devices are disclosed. Embodiments include providing parallel structures in a first layer on a substrate; determining measurement sites, in a second layer above the first layer, void of active integrated circuit elements; forming overlay trenches, in the measurement sites and parallel to the structures, exposing sections of the structures, wherein each overlay trench is aligned over a structure and over spaces between the structure and adjacent structures; determining a trench center-of-gravity of an overlay trench; determining a structure center-of-gravity of a structure exposed in the overlay trench; and determining an overlay parameter based on a difference between the trench center-of-gravity and the structure center-of-gravity.

A method including determining a position of a first pattern in each of a plurality of target portions on a substrate, based on a fitted mathematical model, wherein the first pattern includes at least one alignment mark, wherein the mathematical model is fitted to a plurality of alignment mark displacements (dx, dy) for the alignment marks in the target portions, and wherein the alignment mark displacements are a difference between a respective nominal position of the alignment mark and measured position of the alignment mark; and transferring a second pattern onto each of the target portions, using the determined position of the first pattern in each of the plurality of target portions, wherein the mathematical model includes polynomials Z1 and Z2: Z1=r.sup.2 cos(2) and Z2=r.sup.2 sin(2) in polar coordinates (r, ) or Z1=x.sup.2y.sup.2 and Z2=xy in Cartesian coordinates (x, y).

A reticle transfer apparatus includes a reticle, a reticle stage (4) and a robot (2). The robot (2) is configured to support, transport and transfer the reticle onto the reticle stage (4). The apparatus further includes: a first set of marks (52) and a second set of marks (53), both provided on the reticle; a pre-alignment unit (3), disposed on one side of the reticle stage (4) and configured to perform a first pre-alignment process by detecting the first set of marks (52) and perform a second pre-alignment process by detecting the second set of marks (53) during the transfer of the reticle; and a control unit, configured to adjust the position of the reticle relative to the reticle stage (4) based on the results of the first pre-alignment process such that the reticle is prevented from colliding with the reticle stage (4) and to adjust the position of the reticle relative to the reticle stage (4) based on the results of the second pre-alignment process such that the reticle is positioned in a predetermined range relative to the reticle stage (4). A reticle transfer method is also disclosed.

A method and associated computer program and apparatuses for determining a correction for at least one control parameter, the at least one control parameter for controlling a semiconductor manufacturing process so as to manufacture semiconductor devices on a substrate. The method includes: obtaining metrology data relating to the semiconductor manufacturing process or at least part thereof; obtaining associated data relating to the semiconductor manufacturing process or at least part thereof, the associated data providing information for interpreting the metrology data; and determining the correction based on the metrology data and the associated data, wherein the determining is such that the determined correction depends on a degree to which a trend and/or event in the metrology data should be corrected based on the interpretation of the metrology data.