A memory device includes a memory array configured with a plurality of memory planes, and control logic, operatively coupled with the memory array. The control logic receives, from a requestor, a plurality of cache read commands requesting first data from the memory array spread across the plurality of memory planes and receives, from the requestor, a cache read context switch command and a snap read command requesting second data from one of the plurality of memory planes of the memory array. Responsive to receiving the cache read context switch command, the control logic suspends processing of the plurality of cache read commands and processes the snap read command to read the second data from the memory array and return the second data to the requestor.

A memory device comprises: a page buffer including a first and second latch, a control circuit configured to perform reading data of a word line and storing the data in the first latch, perform discharging the word line, perform moving the data of the first latch to the second latch, and perform outputting the data of the second latch to an exterior, and a control logic configured to control the control circuit such that an execution section of the discharge and moving for a first word line at least partially overlap each other when a second or third cache read command is inputted in a section in which the storage or discharge for the first word line is performed in response to a first cache read command for the first word line.

Disclosed embodiments provide a technique in which a memory controller determines whether a fetch address is a miss in an L1 cache and, when a miss occurs, allocates a way of the L1 cache, determines whether the allocated way matches a scoreboard entry of pending service requests, and, when such a match is found, determine whether a request address of the matching scoreboard entry matches the fetch address. When the matching scoreboard entry also has a request address matching the fetch address, the scoreboard entry is modified to a demand request.

A memory device and an operation method thereof are provided. The memory device includes: a plurality of page buffers, storing an input data; a plurality of memory planes coupled to the page buffers, based on received addresses of the memory planes, a plurality of weights stored in the memory planes, the memory planes performing bit multiplication on the weights and the input data in the page buffers in parallel to generate a plurality of bit multiplication results in parallel, the bit multiplication results stored back to the page buffers; and at least one accumulation circuit coupled to the page buffers, for performing bit accumulation on the bit multiplication results of the memory planes in parallel or in sequential to generate a multiply-accumulate (MAC) operation result.

Control logic in a memory device initiates an express programming operation to program the set of memory cells to a target programming level of a set of programming levels. A set of data associated with the express programming operation is stored in a cache register. At a first time during the execution of the express programming operation, a prediction operation is executed to determine a prediction result corresponding to a programming status of the set of memory cells. The prediction result is compared to a threshold level to determine whether a condition is satisfied. The release of the set of data from the cache register is caused in response to satisfying the condition.

A method includes transferring data out of a first buffer coupled to a first plane of a plurality of planes of a memory component, where the data was previously transferred from the first plane to the first buffer responsive to an access request to sense data stored in the plurality of planes of the memory component. The method further includes transferring, subsequent to transferring the data out of the first buffer and independently of a command from a processing device, data out of a second buffer coupled to a second plane of the plurality of planes of the memory component, where the data transferred out of the second buffer was previously transferred from the second plane to the second buffer responsive to the access request.

The present disclosure is related to performing speculation in, for example, a memory device or a computing system that includes a memory device. Speculation can be used to identify data that is accessed together or to predict data that will be accessed with greater frequency. The identified data can be organized to improve efficiency in providing access to the data.

A method is described, which includes receiving, by a memory subsystem, a memory command targeted at a memory array; determining, by the memory subsystem, if the memory command is a high priority memory command; and determining if the memory subsystem is processing any non-high priority memory commands. The memory subsystem enables a read page cache mode for processing the memory command in response to determining that (1) the memory command is a high priority memory command and (2) the memory subsystem is not processing any non-high priority memory commands Thereafter, the memory subsystem processes the memory command using the read page cache mode.

A memory device is described, including a command decoder configured to receive a copy command to copy data stored in a first memory location to a second memory location without transmitting the data to an external controller, a memory array electrically connected to the command decoder and including a plurality of memory locations including the first memory location and the second memory location, a data line electrically connected to the memory array and configured to receive, from the first memory location, the data to be transmitted to the second memory location through the same data line, and an output buffer configured to store the data received from the first memory location through the data line to be written into the second memory location without transmitting the data to the external controller.

A semiconductor memory device includes a memory region including a plurality of memory blocks, and suitable for outputting first and second read data from first and second memory blocks among the plurality of memory blocks based on first and second read control signals and a read address signal; a scheduler suitable for outputting a read scheduling signal based on the first and second read control signals; and an output driver suitable for outputting the first and second read data by a predetermined burst length alternately twice or more to a data pad based on a mode signal, wherein the first read data are outputted to the data pad according to a first burst sequence, and the second read data are outputted to the data pad according to a second burst sequence, based on the read scheduling signal.