A semiconductor memory device includes a memory region including a plurality of memory blocks, and suitable for outputting first and second read data from first and second memory blocks among the plurality of memory blocks based on first and second read control signals and a read address signal; a scheduler suitable for outputting a read scheduling signal based on the first and second read control signals; and an output driver suitable for outputting the first and second read data by a predetermined burst length alternately twice or more to a data pad based on a mode signal, wherein the first read data are outputted to the data pad according to a first burst sequence, and the second read data are outputted to the data pad according to a second burst sequence, based on the read scheduling signal.

A caching system including a first sub-cache and a second sub-cache in parallel with the first sub-cache, wherein the second sub-cache includes a set of cache lines, line type bits configured to store an indication that a corresponding cache line of the set of cache lines is configured to store write-miss data, and an eviction controller configured to flush stored write-miss data based on the line type bits.

Systems, apparatuses, and methods related to memory management are described. For example, these may include a first memory level including memory pages in a memory array, a second memory level including a cache, a pre-fetch buffer, or both, and a memory controller that determines state information associated with a memory page in the memory array targeted by a memory access request. The state information may include a first parameter indicative of a current activation state of the memory page and a second parameter indicative of statistical likelihood (e.g., confidence) that a subsequent memory access request will target the memory page. The memory controller may disable storage of data associated with the memory page in the second memory level when the first parameter associated with the memory page indicates that the memory page is activated and the second parameter associated with the memory page is greater than or equal to a threshold.

Embodiments for partitioning a non-volatile memory device is described. In one embodiment a memory system includes a first addressable range of memory blocks for storing different types of data. The memory system is partitioned to include a second addressable range of memory blocks capable of storing data indicating attributes of the first addressable range of memory blocks. The second addressable range of memory blocks may also be periodically updated such that the capacities of the first addressable range of memory blocks may be dynamically adjusted depending on application needs and changes to the non-volatile memory device over time. In some embodiments, one partition of a memory device may be configured for high reliability data storage while a second partition is configured for normal reliability storage.

A machine-learning accelerator system, comprising: a plurality of controllers each configured to traverse a feature map with n-dimensions according to instructions that specify, for each of the n-dimensions, a respective traversal size, wherein each controller comprises: a counter stack comprising counters each associated with a respective dimension of the n-dimensions of the feature map, wherein each counter is configured to increment a respective count from a respective initial value to the respective traversal size associated with the respective dimension associated with that counter; a plurality of address generators each configured to use the respective counts of the counters to generate at least one memory address at which a portion of the feature map is stored; and a dependency controller computing module configured to (1) track conditional statuses for incrementing the counters and (2) allow or disallow each of the counters to increment based on the conditional statuses.

A system includes a memory device and a processing device, coupled to the memory device. The processing device is to sample a first subset of data units from a set of data units of the memory device using a biased sampling process that increases a probability of sampling particular data units from the set of data units based on one or more characteristics associated with the particular data units. The processing device is to identify a first candidate data unit from the first subset of data units and perform a wear leveling operation in view of the first candidate data unit.

Example embodiments of the present invention provide a method, an apparatus, and a computer program product for providing information lifecycle management using a federation of arrays. The method includes receiving a request to provision storage resources of a one big array according to a class of service, the one big array comprising heterogeneous storage resources, and causing the requested storage resources to be provisioned according to a provisioning policy. Execution of an information lifecycle management policy then may be initiated for management of data stored to the storage resources according to the class of service.

A memory device is described, including a command decoder configured to receive a copy command to copy data stored in a first memory location to a second memory location without transmitting the data to an external controller, a memory array electrically connected to the command decoder and including a plurality of memory locations including the first memory location and the second memory location, a data line electrically connected to the memory array and configured to receive, from the first memory location, the data to be transmitted to the second memory location through the same data line, and an output buffer configured to store the data received from the first memory location through the data line to be written into the second memory location without transmitting the data to the external controller.

Techniques for caching data are provided that include receiving, by a caching system, a write memory command for a memory address, the write memory command associated with a first color tag, determining, by a first sub-cache of the caching system, that the memory address is not cached in the first sub-cache, determining, by second sub-cache of the caching system, that the memory address is not cached in the second sub-cache, storing first data associated with the first write memory command in a cache line of the second sub-cache, storing the first color tag in the second sub-cache, receiving a second write memory command for the cache line, the write memory command associated with a second color tag, merging the second color tag with the first color tag, storing the merged color tag, and evicting the cache line based on the merged color tag.

Systems and methods for processing commands at a random access memory. A series of commands are received to read data from the random access memory or to write data to the random access memory. The random access memory can process commands at a first rate when the series of commands matches a pattern, and at a second, slower, rate when the series of commands does not match the pattern. A determination is made as to whether the series of commands matches the pattern based on at least a current command and a prior command in the series of commands. A ready signal is asserted when said determining determines that the series of commands matches the pattern, where the random access memory is configured to receive and process commands faster than the second rate when the pattern is matched and the ready signal is asserted over a period of multiple commands.