Gerber data for a substrate includes coordinates for physical features on the substrate. The coordinates are relative to a substrate origin point on the substrate. The gerber data allows a user to specify any of the physical features as soldering targets of a soldering apparatus that includes a motor for moving a soldering iron according to coordinates relative to a system origin point of the soldering apparatus. When the substrate is placed on the soldering apparatus, its substrate origin point differs from the system origin point of the soldering apparatus. The user may input coordinates for the substrate origin point, which are used by the soldering apparatus to derive coordinates, usable by soldering apparatus, from coordinates in the gerber data. In this way, it is possible to reduce the workload of the user when programming the soldering apparatus to perform a soldering process.

Gerber data for a substrate includes coordinates for physical features on the substrate. The coordinates are relative to a substrate origin point on the substrate. The gerber data allows a user to specify any of the physical features as soldering targets of a soldering apparatus that includes a motor for moving a soldering iron according to coordinates relative to a system origin point of the soldering apparatus. When the substrate is placed on the soldering apparatus, its substrate origin point differs from the system origin point of the soldering apparatus. The user may input coordinates for the substrate origin point, which are used by the soldering apparatus to derive coordinates, usable by soldering apparatus, from coordinates in the gerber data. In this way, it is possible to reduce the workload of the user when programming the soldering apparatus to perform a soldering process.

Methods, systems, and apparatus, including computer programs encoded on computer storage media, for generating a computer chip placement. One of the methods includes obtaining netlist data for a computer chip; and generating a computer chip placement, comprising placing a respective macro node at each time step in a sequence comprising a plurality of time steps, the placing comprising, for each time step: generating an input representation for the time step; processing the input representation using a node placement neural network having a plurality of network parameters, wherein the node placement neural network is configured to process the input representation in accordance with current values of the network parameters to generate a score distribution over a plurality of positions on the surface of the computer chip; and assigning the macro node to be placed at the time step to a position from the plurality of positions using the score distribution.

An integrated circuit (IC) includes: a first cell including an input pin and an output pin extending in a first direction; a second cell adjacent to the first cell in the first direction and including an input pin and an output pin extending in the first direction; a first cell isolation layer extending between the first cell and the second cell in a second direction crossing the first direction; and a first wire extending in the first direction, overlapping the first cell isolation layer, and being connected to the output pin of the first cell and the input pin of the second cell, wherein the output pin of the first cell, the input pin of the second cell, and the first wire are formed in a first conductive layer as a first pattern extending in the first direction.

Provided is a simulation method performed by a process simulator, implemented with a recurrent neural network (RNN) including a plurality of process emulation cells, which are arranged in time series and configured to train and predict, based on a final target profile, a profile of each process step included in a semiconductor manufacturing process. The simulation method includes: receiving, at a first process emulation cell, a previous output profile provided at a previous process step, a target profile and process condition information of a current process step; and generating, at the first process emulation cell, a current output profile corresponding to the current process step, based on the target profile, the process condition information, and prior knowledge information, the prior knowledge information defining a time series causal relationship between the previous process step and the current process step.

A layout modification method for fabricating a semiconductor device is provided. The layout modification method includes calculating uniformity of critical dimensions of first and second portions in a patterned layer by using a layout for an exposure manufacturing process to produce the semiconductor device. A width of the first and second portions equals a penumbra size of the exposure manufacturing process. The penumbra size is utilized to indicate which area of the patterned layer is affected by light leakage exposure from another exposure manufacturing process. The layout modification method further includes compensating non-uniformity of the first and second portions of the patterned layer according to the uniformity of critical dimensions to generate a modified layout. The first portion is divided into a plurality of first sub-portions. The second portion is divided into a plurality of second sub-portions. Each second sub-portion is surrounded by two of the first sub-portions.

A layout modification method for fabricating a semiconductor device is provided. The layout modification method includes calculating uniformity of critical dimensions of first and second portions in a patterned layer by using a layout for an exposure manufacturing process to produce the semiconductor device. A width of the first and second portions equals a penumbra size of the exposure manufacturing process. The penumbra size is utilized to indicate which area of the patterned layer is affected by light leakage exposure from another exposure manufacturing process. The layout modification method further includes compensating non-uniformity of the first and second portions of the patterned layer according to the uniformity of critical dimensions to generate a modified layout. The first portion is divided into a plurality of first sub-portions. The second portion is divided into a plurality of second sub-portions. Each second sub-portion is surrounded by two of the first sub-portions.

A three-dimensional integrated circuit has a plurality of layers disposed in a stacked relationship. Logic circuitry is embodied in a first layer of the three-dimensional integrated circuit. An input output circuit is electrically coupled to the logic circuitry and has a plurality of transistors embodied in at least two layers of the three-dimensional integrated circuit. The input output circuit has first and second input output circuitry, wherein the first input output circuitry operates faster than the second input output circuitry.

An integrated device product having objects positioned in accordance with in-situ constraints. Said in-situ constraints comprise predetermined constraints and their local modifications. These local modifications, individually formulated for a specific pair of objects, account for on-the-spot conditions that influence the optimal positioning of the objects. The present invention improves the yield of integrated devices by adding local process modification distances to the predetermined constraints around processing hotspots thus adding extra safety margin to the device yield.

A method of designing a layout of a semiconductor device includes receiving information on a size of a target chip and a unit placement width for forming a gate line through a self-align double patterning process by a layout design system. The method also includes allocating an input and output area, a hard macro area, and a standard cell area at the target chip, and adjusting a width of the standard cell area by applying a gate generation rule for setting a width of at least one cell row located in the standard cell area to an odd number multiple of the unit placement width. The unit placement width corresponds to a width between centers of a pair of gate lines in the self-align double patterning process.