Apparatus and method for selective overwrite protection of data stored in a non-volatile memory (NVM) with fine precision. In some embodiments, a write command is received from a host device to write one or more blocks of data having associated logical addresses to the NVM. A read operation is performed in response to the write command to read a tag value associated with each block. The write command is disallowed in response to the tag value indicating a protected version of the block having the associated logical address is already stored at the selected location. The tag value may be a key version value indicative of a version of an encryption key used to encrypt user data in the data block and whether the block is write-protected.

The disclosed systems include features to mitigate a risk of data corruption attributable to unexpected power loss events. In particular, the disclosed system identifies and retrieves complement data associated with each received write command and stores the complement data in a non-volatile cache while the complement data is overwritten via execution of the write command.

The present invention provides a data storage device including a random access memory and a controller. The random access memory has a cache area. The controller loads a part of data mapping sets of the data mapping table on a plurality of sectors of the cache area, wherein any of the data mapping sets that has been read less than a predetermined number of times is defined as an infrequent data mapping set, and any of the data mapping sets that has been read more than the predetermined number of times is defined as a frequent data mapping set.

A one-time programmable memory device is provided in the invention. The one-time programmable memory device includes a one-time programmable memory and a memory controller. The one-time programmable memory includes a first block and a second block. The first block includes a plurality of initial address units and each initial address unit corresponds to a variable to record the storage address of its corresponding variable, and wherein the second block includes a plurality of storage units and each storage unit has a corresponding storage address. The memory controller is coupled to the one-time programmable memory. The memory controller allocates the storage address to the variable. The content of each variable is stored in the storage unit corresponding to the storage address corresponding to the variable. The number of initial address units is smaller than the number of storage units.

A device that may communicate with at least one device is disclosed. The device may include a communication component to communicate with the devices over a channels about data associated with the devices. The device may also include reception component that may receive a request for information from a host. The device may also include a transmission component to send the data about the devices to the host.

A host device is configured to read and write information from and into a card and to supply a supply voltage that belongs to a first voltage range or a second voltage range which is lower than the first voltage range, and issues a voltage identification command to the card. The voltage identification command includes a voltage range identification section, an error detection section, and a check pattern section. The voltage range identification section includes information indicating which one of the first voltage range and the second voltage range the supply voltage belongs. The error detection section has a pattern configured to enable the card which has received the voltage identification command to detect errors in the voltage identification command. The check pattern section has a preset pattern.

A memory package includes a printed circuit board, a first memory device that is stacked on the printed circuit board, and a second memory device stacked on the first memory device. The first memory device includes a first one-time programmable (OTP) block, the second memory device includes a second OTP block different from the first OTP block, and a horizontal distance from one side of the first memory device to the first OTP block is different from a horizontal distance from one side of the second memory device to the second OTP block.

A memory module comprises dynamic random access memory (DRAM), Flash memory, and a module controller. The module controller is configured to receive data to be transferred from the DRAM to the Flash memory, compute first cyclic redundancy check (CRC) codes for the data, and write the data into the Flash memory. The module controller is further configured to read the data from the Flash memory, compute second CRC codes for the data read from the Flash memory, and transfer the data to the DRAM. The module controller is further configured to compare the second CRC codes with the first CRC codes to determine one or more erroneous data bits in the data read from the Flash memory, read a data segment of the data from the DRAM that include the one or more erroneous data bits, correct the one or more erroneous data bits in the data segment, and write the data segment back into the DRAM.

This document includes techniques, apparatuses, and systems related to an interface for revision-limited memory, which can improve various computing aspects and performance. In aspects, confidentiality, integrity, and availability may be ensured while increasing the performance of revision-limited memory. In this example, the techniques also enable the digital computing device to interact with information related to the revision-limited memory.

A memory module comprises a volatile memory subsystem including DRAM, a non-volatile memory subsystem including Flash memory, and a module control device. The Flash memory includes main Flash providing a main Flash memory space and scratch Flash providing a scratch Flash memory space. The module control device is configured to receive a request from the memory controller to move one or more segments of data in a first Flash block in the main Flash to the DRAM and to, for each respective segment of data: select a respective set of pages in the DRAM; transfer respective data stored in the respective set of pages from the DRAM to a corresponding segment in the scratch Flash; and transfer the respective segment of data to the respective set of pages in the DRAM. Thus, data can be moved segment by segment between the DRAM and the Flash memory.