A memory system includes: a first memory module including first volatile memories; a second memory module including second volatile memories, non-volatile memories and a module controller; a memory controller controlling the first and second memory modules through second and third control buses, respectively; and a switch array electrically coupling the second and third control buses, wherein the module controller controls the switch array to electrically couple the second and third control buses in a backup operation for backing up data of the first volatile memories to the non-volatile memories, wherein the first and second memory modules include one or more first memory stacks and one or more second memory stacks, respectively, wherein the first volatile memories are stacked in the first memory stacks, and wherein the second volatile memories, the non-volatile memories and the module controller are stacked in the second memory stacks.

Processing a read request to read metadata from an entry of a metadata page may include: determining whether the metadata page is cached; responsive to determining the metadata page is cached, obtaining the first metadata from the cached metadata page; responsive to determining the metadata page is not cached, determining whether the requested metadata is in a metadata log of metadata changes stored in a volatile memory; and responsive to determining the metadata is the metadata log of metadata changes stored in the volatile memory, obtaining the requested metadata from the metadata log. Processing a write request that overwrites an existing value of a metadata page with an updated value may include: recording a metadata change in the metadata log that indicates to update the metadata page with the updated value; and performing additional processing during destaging that uses the existing value prior to overwriting it with the updated value.

Aspects of the present disclosure relate to data cache management. In embodiments, a storage array's memory is provisioned with cache memory, wherein the cache memory includes one or more sets of distinctly sized cache slots. Additionally, a logical storage volume (LSV) is established with at least one logical block address (LBA) group. Further, at least one of the LSV's LBA groups is associated with two or more distinctly sized cache slots based on an input/output (IO) workload received by the storage array.

A hybrid memory includes cache of relatively fast and durable dynamic, random-access memory (DRAM) in service of a larger amount of relatively slow and wear-sensitive flash memory. An address buffer on the module maintains a static, random-access memory (SRAM) cache of addresses for data cached in DRAM.

A memory module comprises a volatile memory subsystem, a non-volatile memory subsystem, and a module controller coupled to the volatile memory subsystem and to the non-volatile memory subsystem. The module controller is configurable to control data transfers between the volatile memory subsystem and the non-volatile memory subsystem. The module controller includes a data selection circuit configurable to pre-search data transferred from the non-volatile memory with respect to one or more search criteria before providing the pre-select data relevant to the one or more search criteria to the volatile memory subsystem.

According to one embodiment, a memory system includes a nonvolatile memory and a controller which controls the nonvolatile memory. The controller notifies to an outside an extensive signal which indicates a predetermined state of the nonvolatile memory or the controller.

The various embodiments disclose an electronic device including: a storage including a non-volatile memory having a buffer space and a storage space, a storage device controller, and a storage interface, and a processor. According to various embodiments, the processor may be configured to perform control to determine whether the storage supports a high speed data storage mode using a buffer space of a non-volatile memory of the storage, activate a function of writing data buffered in the buffer space of the non-volatile memory into a storage space of the non-volatile memory based on the storage interface operating in a first state based on the storage supporting the high speed data storage mode, and transition the storage interface of the storage to the first state based on no request to the storage being generated during a predetermined time period based on the storage interface operating in a second state.

A storage system has zones in solid-state storage memory, with power loss protection. The system identifies portions of data for processes that utilize power loss protection. The system determines to activate or deactivate power loss protection for the portions of data for the processes. The system tracks activation and deactivation of power loss protection in zones in the solid-state storage memory, in accordance with the portions of data having power loss protection activated or deactivated.

A memory system of an embodiment includes a nonvolatile memory, a primary cache memory, a secondary cache memory, and a processor. The processor performs address conversion by using logical-to-physical address conversion information relating to data to be addressed in the nonvolatile memory. Based on whether first processing is performed on the nonvolatile memory or second processing is performed on the nonvolatile memory, the processor controls to store whether the logical-to-physical address conversion information relating to the first processing to be in the primary cache memory as cache data or logical-to-physical address conversion information relating to the second processing to be in the secondary cache memory as cache data.

A system includes a first memory device having a region allocated as a first persistent memory region (PMR) having a first set of pages, a second memory device comprising a non-volatile memory device having a region allocated as a second PMR region having a second set of pages, and at least one processing device, operatively coupled to the first memory device and the second memory device, to implement a PMR mechanism to cause the second PMR region to be accessible through the first PMR region.