This technology provides an electronic device. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a contact plug; a first stack structure disposed over the contact plug and coupled to the contact plug, wherein the first stack structure includes a pinning layer controlling a magnetization of a pinned layer; and a second stack structure disposed over the first stack structure and coupled to the first stack structure, wherein the second stack structure includes a MTJ (Magnetic Tunnel Junction) structure which includes the pinned layer having a pinned magnetization direction, a free layer having a variable magnetization direction, and a tunnel barrier layer interposed between the pinned layer and the free layer, wherein a width of the first stack structure is larger than a width of the contact plug and a width of the second stack structure.

A transaction manager for handling operations on data in a storage system provides a system for executing transactions that uses a versioned tuple cache to achieve fast, abortable transactions using a redo-only log. The transaction manager updates an in-memory key-value store and also attaches a transaction identifier to the tuple as a minor key. Opportunistic locking can be accomplished due to the low cost of aborting transactions.

A memory system includes: a memory module including: a first memory device including a first memory and a first memory controller suitable for controlling the first memory to store data; and a second memory device including a second memory and a second memory controller suitable for controlling the second memory to store data; and a processor suitable for executing an operating system (OS) and an application to access a data storage memory through the first and second memory devices.

A method includes performing one or more operations as requested by a thread executing on a processor, the thread having a thread context; receiving a park request from the thread, the park request received following a request from the thread for a low latency resource, wherein the cache response time is less than or equal to a resource response threshold so as to allow the thread context to be stored and retrieved from the cache in less time than the portion of time it takes to complete the request for the low latency resource; storing the thread context in the cache; detecting that the resume condition has occurred; retrieving the thread context from the cache; and resuming execution of the thread.

An instance of universally shared generic code is generated. A runtime parameter enables the size of a stack frame on which local data can be stored to be determined. Dynamically sized locals can be stored on a stack enabling precise garbage collection reporting. One frame of the stack is allocated for each code segment to simplify GC reporting. A reporting region in the frame memory region comprises a count of locals and a location at which the local is found in the stack.

A data processing apparatus and method of data processing are provided, which relate to the operation of a processor which maintains a call stack in dependence on the data processing instructions executed. The processor is configured to operate in a transactional execution mode when the data processing instructions seek access to a stored data item which is shared with a further processor. When the processor enters its transactional execution mode it stores a copy of the current stack depth indication and thereafter, when operating in its transactional execution mode, further modifications to the call stack are compared to the copy of the stack depth indication stored. If the relative stacking position of the required modification is in a positive stack growth direction with respect to the copy stored, the modification to the call stack is labelled as non-speculative. Conversely if the modification to the call stack is to be made at a relative stacking position which is not in a positive growth direction with respect to the position indicated by the copy stored, then that modification is labelled as speculative. The size of the write-set associated with maintaining the call stack while in transactional execution mode can therefore be reduced.

This invention provides a cache system and method based on instruction read buffer (IRB). When applied to the field of processor, it is capable of filling instructions to the instruction read buffer which can be directly accessed by processor core and the processor core outputs instruction to the processor core for execution autonomously and achieve a high cache hit rate.

This technology provides an electronic device. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a contact plug; a first stack structure disposed over the contact plug and coupled to the contact plug, wherein the first stack structure includes a pinning layer controlling a magnetization of a pinned layer; and a second stack structure disposed over the first stack structure and coupled to the first stack structure, wherein the second stack structure includes a MTJ (Magnetic Tunnel Junction) structure which includes the pinned layer having a pinned magnetization direction, a free layer having a variable magnetization direction, and a tunnel barrier layer interposed between the pinned layer and the free layer, wherein a width of the first stack structure is larger than a width of the contact plug and a width of the second stack structure.

Methods and apparatus for a secure memory controller. The secure memory controller includes circuitry and logic that is programmed to prevent malicious code from overwrite protected regions of system memory. The memory controller observes memory access patterns and trains itself to identify thread stacks and addresses relating to the thread stacks including stack-frame pointers and return addresses. In one aspect, the memory controller prevents a return address from being overwritten until a proper return from a function call is detected. The memory controller is also configured to prevent malicious code from overwriting page table entries (PTEs) in page tables. Pages containing PTEs are identified, and access is prevented to the PTEs from user-mode code. The PTEs are also scanned to detect corrupted PTEs resulting from bit manipulation by malicious code.

An electronic device may include a semiconductor memory. The semiconductor memory may include a variable resistance element including a ferromagnetic layer including a hydrogen group; an oxide spacer formed on sidewalls of the variable resistance element; and a nitride spacer formed on the oxide spacer.