A memory system may include: a nonvolatile memory device, a volatile memory device, a free exclusive mode flag configured to correspond to an entrance/exit state of a free exclusive mode, a host controller configured to process a first operation with the host and delay a process of the first operation in an entrance period of the free exclusive mode which is knowable by checking a value of the free exclusive flag, and a memory controller configured to process a second operation with the nonvolatile memory device, set the value of the free exclusive flag in response to a result of checking a state of the nonvolatile memory device, and exclusively use the volatile memory device so as to process a merge operation in the second operation in the entrance period of the free exclusive mode that is knowable by checking the value of the free exclusive flag.

The present disclosure includes apparatuses and methods related to a memory system including a filter. An example apparatus can include a filter to store a number flags, wherein each of the number of flags corresponds to a cache entry and each of the number of flags identifies a portion of the memory device where data of a corresponding cache entry is stored in the memory device.

Systems, apparatuses and methods may provide for detecting an issued request in a queue that is shared by a plurality of domains in a memory architecture, wherein the plurality of domains are associated with non-uniform access latencies. Additionally, a destination domain associated with the issued request may be determined. Moreover, a first set of additional requests may be prevented from being issued to the queue if the issued request satisfies an overrepresentation condition with respect to the destination domain and the first set of additional requests are associated with the destination domain. In one example, a second set of additional requests are permitted to be issued to the queue while the first set of additional requests are prevented from being issued to the queue, wherein the second set of additional requests are associated with one or more remaining domains in the plurality of domains.

Systems, devices, apparatuses, components, methods, and techniques for predicting user and media-playback device states are provided. Systems, devices, apparatuses, components, methods, and techniques for representing cached, user-selected, and streaming content are also provided.

A data processing system includes a master, a central request agent, and a plurality of snoopers communicatively coupled to a system fabric for communicating requests subject to retry. The master issues on the system fabric a multicast request intended for the plurality of snoopers. The central request agent receives the multicast request on the system fabric, assigns the multicast request to a particular state machine among a plurality of state machines in the central request agent, and provides the master a coherence response indicating successful completion of the multicast request. The central request agent repetitively issues on the system fabric a multicast request in association with a machine identifier identifying the particular state machine until a coherence response indicates the multicast request is successfully received by all of the plurality of snoopers.

Methods, apparatus, systems and articles of manufacture to facilitate atomic operation in victim cache are disclosed. An example system includes a first cache storage to store a first set of data; a second cache storage to store a second set of data that has been evicted from the first cache storage; and a storage queue coupled to the first cache storage and the second cache storage, the storage queue including: an arithmetic component to: receive the second set of data from the second cache storage in response to a memory operation; and perform an arithmetic operation on the second set of data to produce a third set of data; and an arbitration manager to store the third set of data in the second cache storage.

A caching system including a first sub-cache, a second sub-cache, coupled in parallel with the first sub-cache, for storing cache data evicted from the first sub-cache and write-memory commands that are not cached in the first sub-cache, and a cache controller configured to receive two or more cache commands, determine a conflict exists between the received two or more cache commands, determine a conflict resolution between the received two or more cache commands, and sending the two or more cache commands to the first sub-cache and the second sub-cache.

A caching system including a first sub-cache and a second sub-cache in parallel with the first sub-cache, wherein the second sub-cache includes a set of cache lines, line type bits configured to store an indication that a corresponding cache line of the set of cache lines is configured to store write-miss data, and an eviction controller configured to flush stored write-miss data based on the line type bits.

The present disclosure includes apparatuses and methods related to a memory device as the store to program instructions. An apparatus comprises a memory device having an array of memory cells and sensing circuitry coupled to the array. The sensing circuitry includes a sense amplifier and a compute component configured to implement logical operations. A memory controller, coupled to the array and the sensing circuitry is configured to receive a block of instructions including a plurality of program instructions. The memory controller is configured to store the block of instructions in the array and retrieve program instructions to perform logical operations on the compute component.

Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a first channel layer formed over a substrate and extending in a vertical direction; a first stacked structure comprising a plurality of first interlayer dielectric layers and a plurality of first gate electrode layers which are alternately stacked along the first channel layer; a first memory layer interposed between the first channel layer and the first gate electrode layers; a second channel layer formed over the first channel layer and extending in the vertical direction; a second stacked structure comprising a plurality of second interlayer dielectric layers and a plurality of second gate electrode layers which are alternately stacked along the second channel layer; a second memory layer interposed between the second channel layer and the second gate electrode layers; a first channel connection pattern formed between the first channel layer and the second channel layer and coupling the first and the second channel layers to each other; and a first etch stop pattern formed between the first and second stacked structures and at substantially the same level as the first channel connection pattern, wherein the first etch stop pattern includes the same material as the first channel connection pattern and is isolated from the first channel connection pattern.