Examples described herein relates to a network interface apparatus that includes packet processing circuitry and a bus interface. In some examples, the packet processing circuitry to: process a received packet that includes data, a request to perform a write operation to write the data to a cache, and an indicator that the data is to be durable and based at least on the received packet including the request and the indicator, cause the data to be written to the cache and non-volatile memory. In some examples, the packet processing circuitry is to issue a command to an input output (IO) controller to cause the IO controller to write the data to the cache and the non-volatile memory. In some examples, the cache comprises one or more of: a level-0 (L0), level-1 (L1), level-2 (L2), or last level cache (LLC) and the non-volatile memory comprises one or more of: volatile memory that is part of an Asynchronous DRAM Refresh (ADR) domain, persistent memory, battery-backed memory, or memory device whose state is determinate even if power is interrupted to the memory device. In some examples, based on receipt of a second received packet that includes a request to persist data, the packet processing circuitry is to request that data stored in a memory buffer be copied to the non-volatile memory.

A cache read method of a nonvolatile memory device including a plurality of page buffer units and cache latches, each page buffer units having a sensing latch and a sensing node line is provided. The method comprises performing a first on-chip valley search (OVS) read on a selected memory cell using a first sensing node line and a first sensing latch of a first page buffer unit of the plurality of page buffer units; storing first data sensed from the selected memory cell in the first sensing latch, the first data based on a result of the first OVS read; dumping the first data to sensing node lines of at least one page buffer unit, excluding the first page buffer unit, from among the plurality of page buffer units; and performing a second OVS read on the selected memory cell using the first sensing latch.

A hybrid memory includes cache of relatively fast and durable dynamic, random-access memory (DRAM) in service of a larger amount of relatively slow and wear-sensitive flash memory. An address buffer on the module maintains a static, random-access memory (SRAM) cache of addresses for data cached in DRAM.

A memory module comprises a volatile memory subsystem, a non-volatile memory subsystem, and a module controller coupled to the volatile memory subsystem and to the non-volatile memory subsystem. The module controller is configurable to control data transfers between the volatile memory subsystem and the non-volatile memory subsystem. The module controller includes a data selection circuit configurable to pre-search data transferred from the non-volatile memory with respect to one or more search criteria before providing the pre-select data relevant to the one or more search criteria to the volatile memory subsystem.

The present disclosure generally relates to methods of operating storage devices. The storage device comprises a controller comprising first random access memory (RAM1), second random access memory (RAM2), and a storage unit divided into a plurality of streams. When a write command is received to write data to a stream, change log data is generated and stored in the RAM1, the previous delta data for the stream is copied from the RAM2 to the RAM1 to be updated with the change log data, and the updated delta data is copied to the RAM2. The delta data stored in the RAM2 is copied to the storage unit periodically. The controller tracks which delta data has been copied to the RAM2 and to the storage unit. During a power failure, the delta data and the change log data are copied from the RAM1 or the RAM2 to the storage unit.

The various embodiments disclose an electronic device including: a storage including a non-volatile memory having a buffer space and a storage space, a storage device controller, and a storage interface, and a processor. According to various embodiments, the processor may be configured to perform control to determine whether the storage supports a high speed data storage mode using a buffer space of a non-volatile memory of the storage, activate a function of writing data buffered in the buffer space of the non-volatile memory into a storage space of the non-volatile memory based on the storage interface operating in a first state based on the storage supporting the high speed data storage mode, and transition the storage interface of the storage to the first state based on no request to the storage being generated during a predetermined time period based on the storage interface operating in a second state.

A multiple function storage device is disclosed. The multiple function storage device may include an enclosure, a storage device associated with the enclosure, and an bridging device associated with the enclosure. The storage device may include a connector to receive a first message using a first protocol originating at a host, a physical function (PF) and a virtual function (VF) exposed by the storage device via the connector, storage for data relating to the first message, and a controller to manage writing a write data to the storage and reading a read data from the storage. The bridging device may include an embedded network interface controller (eNIC) to receive a second message using a second protocol from the host, a write buffer to store the write data to be written to the storage device by the host, a read buffer to store the read data to be read from the storage device for the host, a bridge circuit to translate the second message using the second protocol into the first message using the first protocol, and a root port to identify the storage device and to transmit the first message to the VF. The bridging device may be configured to map the host to the VF.

A storage system has zones in solid-state storage memory, with power loss protection. The system identifies portions of data for processes that utilize power loss protection. The system determines to activate or deactivate power loss protection for the portions of data for the processes. The system tracks activation and deactivation of power loss protection in zones in the solid-state storage memory, in accordance with the portions of data having power loss protection activated or deactivated.

Data is stored at a cache portion of a cache memory of a memory sub-system responsive to a request to perform a write operation to write the data. A duplicate copy of the data is stored at a write buffer portion of the cache memory. The cache memory is partitioned into the cache portion and the write buffer portion. An entry that maps a location of the duplicate copy of the data stored at the write buffer portion of the cache memory to a location of the data stored at the cache portion of the cache memory is recorded in a write buffer record.

A memory storage system comprising a non-volatile semiconductor memory device comprising a memory array and a plurality of buffers, and a controller in communication with the plurality of buffers. The controller may be configured to issue a command to the non-volatile semiconductor memory device to cause a transfer of a data payload from the controller to a subset of n first buffers of the plurality of buffers. The controller may also be configured to issue a command to the non-volatile semiconductor memory device to cause the non-volatile memory device to transfer a data payload from the memory array to a subset of n first buffers of the plurality of buffers.