A request to perform a read operation on a memory device is received. The memory device includes a first group of memory cells. The first group of memory cells represents a first sequence of bits based on a first sequence of charge levels formed by the first group of memory cells. The read operation is performed by obtaining a first read signal for a first memory cell and a second read signal for a second memory cell of the first group of memory cells. A first rule logic is applied to the first read signal to generate a first updated signal and a second rule logic is applied to the second read signal to generate a second updated signal. Logic functions are applied to the first and second updated signals to generate an output signal indicating the first sequence of bits stored by the first group of memory cells.

A memory chip comprises a first memory controller, a first data storage zone, a security unit and an address configuration unit. The first data storage zone is coupled to the first memory controller, and represented by a first physical address range. The security unit is coupled to the first memory controller. The address configuration unit is coupled to the first memory controller. The memory chip is configured to be coupled between a host controller and another memory chip. The another memory chip comprises a second data storage zone represented by a second physical address range. The address configuration unit records one or more relationships of a logical address range corresponding to the first physical address range and the second physical address range. The security unit is configured to encrypt and decrypt data in the first data storage zone and the second data storage zone.

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which security measures may be implemented to control access to a fuse array (or other secure features) of the memory devices based on a secure access key. In some cases, a customer may define and store a user-defined access key in the fuse array. In other cases, a manufacturer of the memory device may define a manufacturer-defined access key (e.g., an access key based on fuse identification (FID), a secret access key), where a host device coupled with the memory device may obtain the manufacturer-defined access key according to certain protocols. The memory device may compare an access key included in a command directed to the memory device with either the user-defined access key or the manufacturer-defined access key to determine whether to permit or prohibit execution of the command based on the comparison.

A computing system (100) having a storage system that includes a storage device (130) and a host device (105), where the host device (105) is configured to issue memory access commands to the storage device (130). The computing system (100) further includes a prediction system (190) comprising processing circuitry that is configured to perform operations that cause the prediction system (190) to identify one or more components of the storage system (918) that limit random rad performance of the storage system (918). The operations further cause the prediction system (190) to obtain characterization data that is indicative of the impact of the one or more components on random read performance and generate a model based on the characterization data to predict random read performance of the storage system (918). The operations additionally cause the prediction system (190) to execute the model in a simulation of the storage system (918) to generate a random read performance parameter for the storage system (918).

A non-volatile memory device, a method of operating the non-volatile memory device, and a memory system including the non-volatile memory device are provided. A non-volatile memory device includes a memory cell array including a plurality of memory cells configured to be each programmed to one state of a plurality of states, a page buffer circuit including a plurality of page buffers configured to each store received data as state data indicating a target state of a corresponding one of the plurality of memory cells, the page buffer circuit being configured to perform a state data reordering operation of changing a first state data order into a second state data order during performance of a program operation on selected memory cells of the plurality of memory cells, and a reordering control circuit configured to control the page buffer circuit to perform the state data reordering operation simultaneously with the program operation.

An apparatus including a memory structure comprising non-volatile memory cells and a microcontroller. The microcontroller is configured to output Core Timing Control (CTC) signals that are used to control voltages applied in the memory structure. In one aspect, information from which the CTC signals may be generated is pre-computed and stored. This pre-computation may be performed in a power on phase of the memory system. When a request to perform a memory operation is received, the stored information may be accessed and used to generate the CTC signals to control the memory operation. Thus, considerable time and/or power is saved. Note that this time savings occurs each time the memory operation is performed. Also, power is saved due to not having to repeatedly perform the computation.

A method for managing processing power in a storage system is provided. The method includes providing a plurality of blades, each of a first subset having a storage node and storage memory, and each of a second, differing subset having a compute-only node. The method includes distributing authorities across the plurality of blades, to a plurality of nodes including at least one compute-only node, wherein each authority has ownership of a range of user data.

A trigger rate associated with a scan operation of a set of memory pages of a data block is identified. The trigger rate is compared to a threshold rate to determine that a condition is satisfied. In response to satisfying the condition, a refresh operation is executed on the set of memory pages of the data block.

A method, an apparatus, a device and a computer readable storage medium for designing a dual-mirror shared conf partition file are provided. The method includes pre-configuring disk space occupation capacities for a first flash mirror file, a second flash mirror file, and a shared conf partition of the BMC, and generating a FW file of the BMC which does not include a shared conf partition file. The method further includes mounting partitions configured in one of the first and second flash mirror files firstly and then mounting the shared Conf partition at last, in response to an instruction for starting the one of the first and second flash mirror files. The shared conf partition stores a configuration file of the BMC. The shared conf partition and the configuration file are automatically generated when the BMC runs normally for the first time.

Provided is a storage device including a power management integrated circuit chip; multiple non-volatile memories configured to receive power from the power management integrated circuit chip; and a controller configured to control the non-volatile memories, wherein the controller checks a state of the power during a read operation and a write operation on the non-volatile memories and, when a power failure is detected in at least one of the non-volatile memories, implements a power failure detection mode regarding the read operation and the write operation on all of the non-volatile memories.