A memory system includes a controller, a buffer, and a nonvolatile memory including a plurality of blocks, wherein each of the blocks includes a plurality of pages and each of the pages includes a plurality of unit data portions. The controller is configured to carry out garbage collection by reading data from one or more pages of a target block of the garbage collection and selectively copying valid unit data portions included in the read data to another block, count a number of invalid unit data portions included in the read data, and accept, in the buffer, unit data portions from a host as write data, up to a number determined based on the counted number, during the garbage collection.

A method of operating a storage device, including a first memory region having a lowest bit density, a second memory region having a medium bit density, and a third memory region having a highest bit density, includes determining a hotness of a logical address received with a write command and data to be written, from a host, based on the determined hotness being greater than a first hotness threshold, determining whether a wear level of the first memory region is greater than a wear threshold, and increasing the first hotness threshold and storing the data in the second memory region based on the wear level of the first memory region being greater than a threshold.

An operation method of a storage device configured to communicate with an external device through an interface channel includes receiving an indicator of a first throttling level of a plurality of throttling levels from the external device, setting a first operation parameter based on a throttling predefined table (PDT) including a relationship between the plurality of throttling levels and a plurality of throttling performances, such that the interface channel has a first throttling performance from among the plurality of throttling performances, the first throttling performance corresponding to the first throttling level, receiving a first input/output (I/O) request from the external device through the interface channel having the first throttling performance caused by the setting of the first operation parameter, and processing a first operation corresponding to the first I/O request through the interface channel having the first throttling performance.

A storage system is provided. The storage system includes a storage device including a plurality of nonvolatile memories configured to transmit storage throughput information, and a host device configured to change connection configurations for the storage device based on the storage throughput information, wherein the host device changes the connection configurations by changing configurations for transmitter and receiver paths between the storage device and the host device independently.

Methods, systems, and devices for monitoring and adjusting access operations at a memory device are described to support integrating monitors or sensors for detecting memory device health issues, such as those resulting from device access or wear. The monitoring may include traffic monitoring of access operations performed at various components of the memory device, or may include sensors that may measure parameters of components of the memory device to detect wear. The traffic monitoring or the parameters measured by the sensors may be represented by a metric related to access operations for the memory device. The memory device may use the metric (e.g., along with a threshold) to determine whether to adjust a parameter associated with performing access operations received by the memory device, in order to implement a corrective action.

A decoding circuit module, a memory control circuit unit, and a memory storage device are disclosed. The decoding circuit module is configured to decode data read from a rewritable non-volatile memory module and the decoding circuit module includes a first buffer, a second buffer, a first decoding circuit, and a second decoding circuit. The first decoding circuit is configured to decode first data read from the rewritable non-volatile memory module and stored in the first buffer. The second decoding circuit is configured to decode second data read from the rewritable non-volatile memory module and stored in the second buffer. A data decoding ability of the first decoding circuit is different from a data decoding ability of the second decoding circuit. The second data is stored in the second buffer via the first buffer and is not decoded by the first decoding circuit.

A storage device includes a non-volatile memory including a plurality of non-volatile memory cells, a buffer memory configured to temporarily store write data to be written to the non-volatile memory or read data read from the non-volatile memory, and a controller configured to receive a sleep mode signal from an external host. When the sleep mode signal is received by the controller, the controller is configured to block a first power supplied to the non-volatile memory and set the buffer memory to one of a first mode in which a second power is blocked from being supplied to the buffer memory and a second mode in which the buffer memory operates with low power. The write data stored in the buffer memory is written to the non-volatile memory when the buffer memory is set to the first mode.

A machine-implemented method for managing a flash storage system includes determining a projected life value for each of a plurality of flash memory devices in the flash storage system, wherein the projected life value for at least one of the plurality of flash memory devices is higher than the projected life value of at least another one of the plurality of flash memory devices. The method also includes determining operating parameters for each of the plurality of flash memory devices based on the respective projected life values for the plurality of flash memory devices. The method also includes configuring the plurality of flash memory devices based on the determined operating parameters.

A technique to control write operations in a logical partition. For example, a device can receive a user specified write threshold for the logical partition that is hosted on a pool of memory cells shared by a plurality of logical partitions in wear leveling. An accumulated amount of data written into the memory cells according to write requests addressing the logical partition is tracked. In response to the accumulated amount reaches the write threshold, further write requests addressing the logical partition can be blocked, rejected, and/or ignored. For example, the logical partition can be used to buffer data for time shift in playing back content streaming from a server. Write operations for time shift can be limited via the user specified threshold to prevent overuse of the total program erasure budget of the pool of memory cells shared with other logical partitions.

A system and method for reordering data blocks received from a zone of a memory device. An example method includes sending, by a host system to a memory sub-system comprising a memory device, a plurality of write commands; receiving, by the host system from the memory sub-system, block allocation metadata, wherein the block allocation metadata references one or more locations in the memory device corresponding to a zone; generating, by the host system, a reorder map based on the block allocation metadata; reading a plurality of data blocks associated with the zone; and reordering, by the host system, the plurality of data blocks based on the reorder map.