A computer device reads an indicator from a configuration file that identifies a granularity of units of data at which to track validity. The granularity is one of a plurality of granularities ranging from one unit of data to many units of data. The computer device generates a machine-readable file configured to cause a processing device of a memory system to track validity at the identified granularity using a plurality of data validity counters with each data validity counter in the plurality of data validity counters tracking validity of a group of units of data at the identified granularity. The computer device transfers the machine-readable file to a memory of the memory system.

According to one embodiment, a memory system includes a non-volatile memory with a plurality of blocks. The minimum unit of a data erasing operation in the memory system is a block. A controller is electrically connected to the non-volatile memory and configured to execute, in response to a first command from a host requesting a secure erase of secure erase target data stored in a first logical area identified by a first logical area identifier, a copy operation copying valid data other than any secure erase target data from one or more first blocks of the plurality in which the secure erase target data is stored to one or more copy destination blocks of the plurality. The controller executes the data erasing operation on the one or more first blocks after the copy operation.

The subject technology provides for recovering a validity table for a data storage system. A set of logical addresses in a mapping table is partitioned into subsets of logical addresses. Each of the subsets of logical addresses is assigned to respective processor cores in the data storage system. Each of the processor cores is configured to check each logical address of the assigned subset of logical addresses in the mapping table for a valid physical address mapped to the logical address, for each valid physical address mapped to a logical address of the assigned subset of logical addresses, increment a validity count in a local validity table associated with a blockset of the non-volatile memory corresponding to the valid physical address, and update validity counts in a global validity table associated with respective blocksets of the non-volatile memory with the validity counts in the local validity table.

A method for managing a memory apparatus including a plurality of non-volatile (NV) memory elements includes: programming a physical block of a specific NV memory element, including: receiving a host command from a host; obtaining a host address and data from the host command; and linking the host address to a page of a physical block of the specific NV memory element and storing the data into the physical block. Before the pages of the physical block are fully programmed, a temporary local page linking address table is stored and is updated each time a linking relationship is changed. When the memory apparatus is to be shut down, the temporary local page linking address table is written to the specific NV memory element; and when the memory apparatus begins a start-up process, a global page address linking table is built by reading the local page address linking table.

Systems, apparatus and methods are provided for logical-to-physical (L2P) address translation. A method may comprise receiving a request for a first logical data address (LDA), and calculating a first translation data unit (TDU) index for a first TDU. The first TDU may contain a L2P entry for the first LDA. The method may further comprise searching a cache of lookup directory entries of recently accessed TDUs using the first TDU index, determining that there is a cache miss, generating and storing an outstanding request for the lookup directory entry for the first TDU in a miss buffer, retrieving the lookup directory entry for the first TDU from an in-memory lookup directory, determining that the lookup directory entry for the first TDU is not valid, reserve a TDU space for the first TDU in a memory and generating a load request for the first TDU.

A semiconductor storage device includes a first memory area configured in a volatile semiconductor memory, second and third memory areas configured in a nonvolatile semiconductor memory, and a controller which executes following processing. The controller executes a first processing for storing a plurality of data by the first unit in the first memory area, a second processing for storing data outputted from the first memory area by a first management unit in the second memory area, and a third processing for storing data outputted from the first memory area by a second management unit in the third memory area.

A data storage device is provided. The data storage device includes a flash memory and a controller. The flash memory stores a firmware that includes a plurality of mode page settings, and each mode page setting includes a plurality of mode parameters. The controller receives a data out message arranged to rewrite a first mode page setting among the plurality of mode page settings. When determining, based on a reference array, that the data out message will change the mode parameters which cannot be rewritten in the first mode page setting, the controller rejects to change the mode parameters which cannot be rewritten in the first mode page setting. The reference array stores a rewriteable setting for each bit of the first mode page setting.

A storage device includes a controller and nonvolatile memories. The controller receives write commands having virtual stream identifiers (IDs), receives discard commands having the virtual stream IDs, and determines a lifetime of write data to which each of the virtual stream IDs is assigned. The nonvolatile memories are accessed by the controller depending on physical stream IDs. The controller maps the virtual stream IDs and the physical stream IDs based on the lifetime of the write data.

Accessing protected data in a flash memory device of a computing device may include determining a location of a block in the flash memory device using dummy bad block indicator information. The block also may have a bad block marker stored in it. Data stored in data portions of pages of the block may then be read.

Various embodiments described herein provide for performing inversion refresh of a physical memory location of a memory device (e.g., memory cell on a negative-and (NAND)-type memory device) based on a state of the physical memory location. For some embodiments, the inversion refresh is performed as part of performing garbage collection or reclamation of physical memory locations of a memory device.