A non-volatile storage system includes a memory controller connected to an integrated memory assembly. The integrated memory assembly includes a memory die comprising non-volatile memory cells and a control die bonded to the memory die. The memory controller receives commands from a host, performs logical address to physical address translation (“address translation”) operations for the commands, and instructs the integrated memory assembly to perform one or more operations in support of the command. The control die also includes the ability to perform the address translation. When performing a command from the host, the memory controller can choose to perform the necessary address translation or instruct the control die to perform the address translation. When the control die performs the address translation, the resulting physical address is used by the control die to perform one or more operations in support of the command.

According to one embodiment, a memory system includes a non-volatile memory, and a controller configured to control the non-volatile memory. The controller is configured to write data to the non-volatile memory, read the written data from the non-volatile memory after writing of the data is completed, generate parity data corresponding to the read data, and write the generated parity data to a memory for parity storage.

In general, according to an embodiment, a storage device includes a non-volatile memory and a controller. The non-volatile memory includes a plurality of pages, each of the pages including a data area of a first size and a redundant area of a second size smaller than the first size. The controller is configured to receive, from a host, a write command, receive, from the host, transfer data associated with the write command. The transfer data includes write data of the first size appended with a first error detection code for the write data. The controller is further configured to store the write data into the data area of one of the pages and the first error detection code into the redundant area of the one of the pages.

Embodiments of the present disclosure relate to a memory system and operation method thereof. According to embodiments of the present disclosure, the memory system may include i) a memory device including a plurality of memory blocks, wherein each of the plurality of memory blocks include a plurality of pages; and ii) a memory controller configured to determine a first super memory block among a plurality of super memory blocks, wherein each of the plurality of super memory blocks includes one or more of the plurality of memory blocks, set a lock to prevent a background operation from being executed for the first super memory block, and transmit data stored in the first super memory block to an external device.

An encoding device and a decoding device use linear and nonlinear codes for encoding and decoding system data for a storage device. The encoding device includes a linear encoder for encoding first data to generate encoded data and a nonlinear transformer for transforming the encoded data with second data to generate output data. The first data includes data on a physical address corresponding to a logical address. The second data includes the logical address and a timestamp value indicating a version of map data mapping between the logical address and the physical address.

Embodiments of the present disclosure relate to a memory system, a memory controller, and a method for operating the same. Garbage collection is performed with regard to the memory device on the basis of a first amount of time and a second amount of time, the first amount of time being a period of time between triggering of first garbage collection and triggering of second garbage collection, and the second amount of time being an amount of time necessary to perform the second garbage collection. A ratio of the first amount of time to the second amount of time is determined as a target ratio value, and the second amount of time is determined to be equal to or longer than a minimum garbage collection operation time. Accordingly, efficient garbage collection can be performed, and the optimal time to perform garbage collection can be determined with regard to a configured performance drop value.

A memory sub-system configured to be responsive to a time to live requirement for load commands from a processor. For example, a load command issued by the processor (e.g., SoC) can include, or be associated with, an optional time to live parameter. The parameter requires that the data at the memory address be available within the time specified by the time to live parameter. When the requested data is currently in the lower speed memory (e.g., NAND flash) and not available in the higher speed memory (e.g., DRAM, NVRAM), the memory sub-system can determine that the data cannot be made available with the specified time and optionally skip the operations and return an error response immediately.

A method and apparatus for performing access control of a memory device with aid of additional physical address information are provided. The method includes: during a garbage collection procedure, reading valid data from a source block and writing the valid data into a destination block; updating at least one logical-to-physical address mapping table; receiving a first read request from a host device, wherein the first read request indicates reading at a first logical address; in response to the first read request, reading the valid data of the destination block according to the second physical address associated with the first logical address; receiving a second read request from the host device, wherein the second read request indicates reading at the first logical address; and in response to the second read request, reading the valid data of the source block according to the first physical address associated with the first logical address.

A computing device includes a non-volatile memory (NVM) interface and a processor. The NVM interface is configured to communicate with an NVM. The processor is configured to store in the NVM Type-Length-Value (TLV) records, each TLV record including one or more encrypted fields and one or more non-encrypted fields, the non-encrypted fields including at least respective validity indicators of the TLV records, to read the TLV records that include the encrypted fields and the non-encrypted fields from the NVM, and to invalidate selected TLV records by modifying the respective validity indicators of the selected TLV records that are stored in the non-encrypted fields.

A storage control apparatus includes: a pre-processing-execution determining block for determining whether or not either one of an erase operation and a program operation is to be executed as pre-processing in a write operation to be carried out on a predetermined data area to serve as a write-operation object; and a pre-read processing block for reading out pre-read data from the data area prior to the write operation if a result of the determination indicates that the pre-processing is to be executed. The apparatus further includes a bit operating block for carrying out: the pre-processing and one of the erase and program operations which is not the pre-processing as post-processing if a result of the determination indicates that the pre-processing is to be executed; and the post-processing without carrying out the pre-processing if a determination result indicates that the pre-processing is not to be executed.