A managing method for a flash storage includes: sorting a plurality of blocks within the flash storage into precise blocks and imprecise blocks; and managing the sorted blocks as a plurality of free block pools. The management includes performing garbage collection and wear leveling, and the wear leveling is performed based on CEW (Cumulative Effective Wearing), the CEW indicating cumulative cell damage induced by performing a plurality of operations on a specific block. A storage system includes a memory array; and a memory controller sorting a plurality of blocks of the memory array based on error rates, applying erase voltages corresponding to the error rates, respectively, when data stored in the blocks are erased, controlling each of the erase voltages to have a value scaled down from a standard voltage, and performing incremental step pulse programming on one or more of the blocks.

According to one embodiment, a memory system includes a non-volatile memory and a controller. The controller controls writing of data to the non-volatile memory or reading of data from the non-volatile memory in response to a command from a host. The controller manages a first area and a second area in a memory space provided to the host, to which an area of the non-volatile memory is mapped. The first area is an area used by the host as a main memory. The second area is an area where valid data is stored.

A priority for each operating requirement of a set of operating requirements of a memory sub-system can be determined. A programming operation setting for a programming operation to be performed at the memory sub-system can be determined based on the priority for each operating requirement. A request to perform the programming operation at the memory sub-system can be received. Responsive to receiving the request to perform the programming operation, the programming operation can be performed at the memory sub-system based on the programming operation setting.

There is provided a method for managing a solid state storage system with hybrid storage technologies. The method includes monitoring one or more storage request streams to identify operating mode characteristics therein from among a set of possible operating mode characteristics. The set of possible operating mode characteristics correspond to a set of available operating modes of the hybrid storage technologies. The method further includes identifying a current operating mode from among the set of available operating modes responsive to the identified operating mode characteristics. The method also includes predicting a likely future operating mode responsive to variations in workload requirements to generate at least one future operating mode prediction. The method additionally includes controlling at least one of data placement, wear leveling, and garbage collection, responsive to the at least one future operating mode prediction.

Systems and methods for solid-state storage drive-level failure prediction and health metric are described. A plurality of host-write commands are received at a solid-state storage device. A number of drive-writes per day based on the on the plurality of host-write commands is determined. An aggregated amount of degradation to one or more internal non-volatile memory components based on the number of drive-writes per day is determined. Using a machine-learned model, a probability of failure value based on a set of parameter data and the aggregated amount of degradation to the non-volatile memory component is generated. An alert is generated, based on the probability of failure value or degradation threshold.

A memory sub-system periodically performs a first wear leveling operation using a direct mapping function on a data management unit of a memory component in the memory sub-system at a first frequency. The memory sub-system further periodically performs a second wear leveling operation using indirect mapping on a group of data management units of the memory component at a second frequency, wherein the second wear leveling operation is performed less frequently than the first wear leveling operation.

A method can include storing first instruction data in a first region of a nonvolatile memory device; mapping addresses of the first region to predetermined memory address spaces of a processor device; executing the first instruction data from the first region with the processor device; receiving second instruction data for the processor device. While the first instruction data remains available to the processor device, the second instruction data can be written into a second region of the nonvolatile memory device. By operation of the processor device, addresses of the second region can be remapped to the predetermined memory address spaces of the processor device; and executing the second instruction data from the second region with the processor device.

An average inter-pulse delay of a data unit of the memory device is calculated. An average temperature of the data unit is calculated. A first scaling factor based on the average inter-pulse delay and a second scaling factor based on the average temperature is obtained. A media management metric based on the first scaling factor and the second scaling factor is calculated. Responsive to determining that the media management metric satisfies a media management criterion, a media management operation on the data unit at a predetermined cycle count is performed.

A storage device may include: a memory device; a cache memory device including a first cache memory which caches first data among data stored in the plurality of pages and a second cache memory which caches second data among the data stored in the plurality of pages; and a memory controller for counting a number of times that each of the plurality of pages is read and a number of times that each of the plurality of pages is written, based on a read request or a write request which are received from a host, and, moving the first data from the first cache memory to the second cache memory when the first data is stored in a first page and a number of times that the first page is read and a number of times that the first page is written satisfy a predetermined condition.

Systems and methods are disclosed including a processing device operatively coupled to memory device. The processing device performs operations comprising receiving a memory access command specifying a logical address; determining a physical address associated with the logical address; determining a portion of the memory device that is referenced by the physical address; determine an endurance factor associated with the portion; and increasing, by a value derived from the endurance factor, a media management metric associated with a management unit of the memory device, wherein the management unit is referenced by the physical address.