An in-memory computation device including a memory array, p×q analog to digital converters (ADCs) and a ladder adder is provided. The memory array is divided into p×q memory tiles, where p and q are positive integers larger than 1. Each of the memory tiles has a plurality local bit lines coupled to a global bit line respectively through a plurality of bit line selection switches. The bit line selection switches are turned on or cur off according to a plurality of control signals. The memory array receives a plurality of input signals. The ADCs are respectively coupled to a plurality of global bit lines of the memory tiles. The ADCs respectively convert electrical signals on the global bit lines to generate a plurality of sub-output signals. The ladder adder is coupled to the ADCs, and performs an addition operation on the sub-output signals to generate a calculation result.

An arithmetic logic unit according to an embodiment of the present technology includes: a plurality of input lines; and a multiply-accumulate operation device. Electrical signals are input to the plurality of input lines. The multiply-accumulate operation device includes a pair of output lines, a plurality of multiplication units including a weight unit that generates, on the basis of the electrical signals input to the plurality of input lines, charges corresponding to multiplication values obtained by multiplying signal values represented by the electrical signals by weight values, a holding unit that holds a binary state, and a switch unit that outputs, on the basis of the held binary state, the charges generated by the weight unit to one of the pair of output lines, an accumulation unit that accumulates the charges output to the pair of output lines by the plurality of multiplication units, and an output unit that outputs, on the basis of the accumulated charges, a multiply-accumulate signal representing a sum of the multiplication values.

An arithmetic logic unit according to an embodiment of the present technology includes: a plurality of input lines; and a multiply-accumulate operation device. Electrical signals are input to the plurality of input lines. The multiply-accumulate operation device includes a pair of output lines, a plurality of multiplication units including a weight unit that generates, on the basis of the electrical signals input to the plurality of input lines, charges corresponding to multiplication values obtained by multiplying signal values represented by the electrical signals by weight values, a holding unit that holds a binary state, and a switch unit that outputs, on the basis of the held binary state, the charges generated by the weight unit to one of the pair of output lines, an accumulation unit that accumulates the charges output to the pair of output lines by the plurality of multiplication units, and an output unit that outputs, on the basis of the accumulated charges, a multiply-accumulate signal representing a sum of the multiplication values.

A semiconductor device with a small circuit area and low power consumption is provided. The semiconductor device includes first to fourth cells, a current mirror circuit, and first to fourth wirings, and the first to fourth cells each include a first transistor, a second transistor, and a capacitor. In each of the first to fourth cells, a first terminal of the first transistor is electrically connected to a first terminal of the capacitor and a gate of the second transistor. The first wiring is electrically connected to first terminals of the second transistors in the first cell and the second cell, the second wiring is electrically connected to first terminals of the second transistors in the third cell and the fourth cell, the third wiring is electrically connected to second terminals of the capacitors in the first cell and the third cell, and the fourth wiring is electrically connected to second terminals of the capacitors in the second cell and the fourth cell. The current mirror circuit is electrically connected to the first wiring and the second wiring.

An improved electronic mixed mode multiplier and accumulate circuit for artificial intelligence and computing system applications that perform vector-vector, vector-matrix and other multiply-accumulate computations. The circuit is provided is a high resolution, high linearity, low area, low power multiply—accumulate (MAC) unit to interface with a memory device for storing computation output results. The MAC unit uses a less number of current carrying elements resulting in much lower integrated circuit area, and provides a tight matching between the current elements thus preserving inherent linearity requirements due to current mode operation. Further the MAC performs current scaling using switches and current division where the current switches occupy minimum size transistors requiring a small area to implement that renders it compatible with MRAM such as a magnetic tunnel junction device. The MAC is hierarchically extended for increased number of bits to provide a delay implementation using orthogonal vector and current addition.

A semiconductor device including a multiplier circuit is provided. A first cell, a second cell, and a first circuit are included. The first cell includes a first transistor. The second cell includes a second transistor. The first circuit includes a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first capacitor, a second capacitor, and a first switch.

A semiconductor device including a multiplier circuit is provided. A first cell, a second cell, and a first circuit are included. The first cell includes a first transistor. The second cell includes a second transistor. The first circuit includes a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first capacitor, a second capacitor, and a first switch.

A multiplier has a MOSFET in a common source configuration. A MOSFET current source is coupled to a drain terminal of the MOSFET. An inverter has an input coupled to the drain terminal of the MOSFET. An output of the inverter gates two currents whose current magnitudes are proportional. A first capacitor has a first terminal coupled to a first of the two currents and a gate of the MOSFET and a second terminal grounded. A second capacitor has a first terminal coupled to a second of the two currents and a second terminal coupled to the first of the two currents. The multiplier is first reset by discharging a gate capacitance of the MOSFET and then allowing it to be recharged to a Vt comparator threshold after which a charge is removed from the gate terminal of the MOSFET reducing a voltage on the gate terminal below the Vt comparator threshold, causing the two currents to be enabled until the Vt comparator threshold reaches a previous Vt comparator threshold and the inverter turns off the two currents. In a next reset phase, the second capacitor holds a multiplied value of charge.

A semiconductor device with high arithmetic performance is provided. The semiconductor device employs the translinear principle, and the semiconductor device includes first to tenth transistors each including a metal oxide in a channel formation region and a first capacitor. A first terminal of the first transistor is electrically connected to a first terminal of the second transistor, a first terminal of the third transistor is electrically connected to a second terminal of the second transistor and a gate of the second transistor through the first capacitor. The second terminal of the second transistor is electrically connected to first terminals of the fourth and the seventh transistors and gates of the fifth and the eighth transistors. A gate of the seventh transistor is electrically connected to first terminals of the fifth and the sixth transistors, and a gate of the tenth transistor is electrically connected to first terminals of the eighth and the ninth transistors.

A compute-in-memory bitcell is provided that includes a pair of cross-coupled inverter for storing a stored bit. The compute-in-memory bitcell includes a logic gate for multiplying the stored bit with an input vector bit. An output node for the logic gate connects to a second plate of a capacitor. A first plate of the capacitor connects to a read bit line.