A magnetic media disk is fabricated by depositing magnetic layers over the disk, then depositing protective later over the magnetic layer, and then performing ion implant process to implant ions into the protective coating. A system for performing the ion implant of the magnetic media disk includes two ion implant chambers. During operation one chamber performs ion implant and one chamber performs chamber cleaning by maintaining inside a plasma of cleaning gas without a disk present inside the chamber.

A magnetic media disk is fabricated by depositing magnetic layers over the disk, then depositing protective later over the magnetic layer, and then performing ion implant process to implant ions into the protective coating. A system for performing the ion implant of the magnetic media disk includes two ion implant chambers. During operation one chamber performs ion implant and one chamber performs chamber cleaning by maintaining inside a plasma of cleaning gas without a disk present inside the chamber.

A method of forming a PMR writer is disclosed wherein at least one of a recessed center section in the write pole trailing edge and a center recessed trailing shield is used to improve the field gradient at track edge. In all embodiments, there is a non-uniform write gap formed between the trailing edge and the trailing shield. The recessed portion of the write pole trailing edge and/or center recess of the trailing shield has a thickness from 10 to 40 nm in a down-track direction and a width in a cross-track direction of 20 to 200 nm. The distance between the center recess and a corner of the trailing edge is from 20 to 80 nm. A sequence of steps is provided to fabricate the two embodiments of the present invention.

A method of forming a PMR writer is disclosed wherein at least one of a recessed center section in the write pole trailing edge and a center recessed trailing shield is used to improve the field gradient at track edge. In all embodiments, there is a non-uniform write gap formed between the trailing edge and the trailing shield. The recessed portion of the write pole trailing edge and/or center recess of the trailing shield has a thickness from 10 to 40 nm in a down-track direction and a width in a cross-track direction of 20 to 200 nm. The distance between the center recess and a corner of the trailing edge is from 20 to 80 nm. A sequence of steps is provided to fabricate the two embodiments of the present invention.

A stack including a crystallographic orientation interlayer, a magnetic zero layer disposed on the interlayer, and a magnetic recording layer disposed on the magnetic zero layer is disclosed. The magnetic zero layer is non-magnetic or has a saturation magnetic flux density (B.sub.s) less than about 100 emu/cc. The magnetic zero layer and the magnetic layer include grains surrounded by a non-magnetic segregant. The magnetic zero layer provides a coherent interface between the interlayer and the magnetic layer with a lattice mismatch less than about 4%.

A stack including a crystallographic orientation interlayer, a magnetic zero layer disposed on the interlayer, and a magnetic recording layer disposed on the magnetic zero layer is disclosed. The magnetic zero layer is non-magnetic or has a saturation magnetic flux density (B.sub.s) less than about 100 emu/cc. The magnetic zero layer and the magnetic layer include grains surrounded by a non-magnetic segregant. The magnetic zero layer provides a coherent interface between the interlayer and the magnetic layer with a lattice mismatch less than about 4%.

A sputtering target containing, as metal components, 0.5 to 45 mol % of Cr and remainder being Co, and containing, as non-metal components, two or more types of oxides including Ti oxide, wherein a structure of the sputtering target is configured from regions where oxides including at least Ti oxide are dispersed in Co (non-Cr-based regions), and a region where oxides other than Ti oxide are dispersed in Cr or Co—Cr (Cr-based region), and the non-Cr-based regions are scattered in the Cr-based region. An object of this invention is to provide a sputtering target for forming a granular film which suppresses the formation of coarse complex oxide grains and generates fewer particles during sputtering.

A sputtering target containing, as metal components, 0.5 to 45 mol % of Cr and remainder being Co, and containing, as non-metal components, two or more types of oxides including Ti oxide, wherein a structure of the sputtering target is configured from regions where oxides including at least Ti oxide are dispersed in Co (non-Cr-based regions), and a region where oxides other than Ti oxide are dispersed in Cr or Co—Cr (Cr-based region), and the non-Cr-based regions are scattered in the Cr-based region. An object of this invention is to provide a sputtering target for forming a granular film which suppresses the formation of coarse complex oxide grains and generates fewer particles during sputtering.

Disclosed is an MgO target for sputtering, which can accelerate a film formation rate even when MgO is used as a target for sputtering in the formation of an MgO film. The MgO target for sputtering, which includes MgO and an electroconductive material as main components, and in which the electroconductive material is capable of imparting orientation to a MgO film when the MgO film containing the electroconductive material is formed by a DC sputtering.

Disclosed is an MgO target for sputtering, which can accelerate a film formation rate even when MgO is used as a target for sputtering in the formation of an MgO film. The MgO target for sputtering, which includes MgO and an electroconductive material as main components, and in which the electroconductive material is capable of imparting orientation to a MgO film when the MgO film containing the electroconductive material is formed by a DC sputtering.