Magnetic recording media including an interlayer configured to reduce lattice mismatch with adjacent layers of the media, such as an adjacent seed layer or an adjacent underlayer. In one example, an interlayer alloy is provided that includes tungsten (W) along with Cobalt (Co), Chromium (Cr), and Ruthenium (Ru). The atomic percentages of W and Ru within the interlayer are selected so that the amount lattice mismatch between the interlayer and its adjacent layers is below a preselected amount, such as below 3% as quantified by d-spacing. In some examples, the atomic percentage of Ru is greater than 25% and the atomic percentage of W is 2-10%. Methods of fabricating the magnetic recording media are also provided.

A MgO sintered sputtering target, wherein a ratio of GOS (Grain Orientation Spread) being 0° to 1° is 75% or higher. A MgO sintered sputtering target, wherein a ratio of KAM (Kernel Average Misorientation) being 0° to 2° is 90% or higher. An object of the present invention is to provide a MgO sintered sputtering target capable of reducing particles.

A MgO sintered sputtering target, wherein a ratio of GOS (Grain Orientation Spread) being 0° to 1° is 75% or higher. A MgO sintered sputtering target, wherein a ratio of KAM (Kernel Average Misorientation) being 0° to 2° is 90% or higher. An object of the present invention is to provide a MgO sintered sputtering target capable of reducing particles.

A sputtering target containing silicon nitride (Si.sub.3N.sub.4) with reduced specific resistance of is provided. A sputtering target including Si.sub.3N.sub.4, SiC, MgO and TiCN, wherein a specific resistance of the sputtering target is 10 mΩ.Math.cm or less.

A sputtering target containing silicon nitride (Si.sub.3N.sub.4) with reduced specific resistance of is provided. A sputtering target including Si.sub.3N.sub.4, SiC, MgO and TiCN, wherein a specific resistance of the sputtering target is 10 mΩ.Math.cm or less.

A magnetic recording medium includes a non-magnetic substrate; a soft magnetic layer; a first seed layer; a second seed layer; an underlayer; and a perpendicular magnetic recording layer. The soft magnetic layer, the first seed layer, the second seed layer, the underlayer and the perpendicular magnetic recording layer are disposed on the non-magnetic substrate in this order. The first seed layer includes MoS.sub.2, hexagonal-BN, WS.sub.2, WSe.sub.2 or graphite. The second seed layer includes AlN having a hexagonal wurtzite type crystal structure. The underlayer includes Ru.

A magnetic recording medium includes a non-magnetic substrate; a soft magnetic layer; a first seed layer; a second seed layer; an underlayer; and a perpendicular magnetic recording layer. The soft magnetic layer, the first seed layer, the second seed layer, the underlayer and the perpendicular magnetic recording layer are disposed on the non-magnetic substrate in this order. The first seed layer includes MoS.sub.2, hexagonal-BN, WS.sub.2, WSe.sub.2 or graphite. The second seed layer includes AlN having a hexagonal wurtzite type crystal structure. The underlayer includes Ru.

A method of manufacturing a magnetic recording medium forms an unfinished product including a magnetic recording layer and a protection layer that are successively formed on a substrate, and forms a lubricant layer on the protection layer of the unfinished product. The lubricant layer is formed by coating a first organic fluorine compound on the protection layer of the unfinished product, and supplying a gas, including a second organic fluorine compound, onto the protection layer of the unfinished product, and decomposing the second organic fluorine compound by Townsend discharge and ultraviolet ray irradiation. The protection layer includes carbon, and the first organic fluorine compound includes a functional group at a terminal thereof.

A method of manufacturing a magnetic recording medium forms an unfinished product including a magnetic recording layer and a protection layer that are successively formed on a substrate, and forms a lubricant layer on the protection layer of the unfinished product. The lubricant layer is formed by coating a first organic fluorine compound on the protection layer of the unfinished product, and supplying a gas, including a second organic fluorine compound, onto the protection layer of the unfinished product, and decomposing the second organic fluorine compound by Townsend discharge and ultraviolet ray irradiation. The protection layer includes carbon, and the first organic fluorine compound includes a functional group at a terminal thereof.

A magnetic recording medium includes a substrate, an underlayer provided above the substrate, and a magnetic layer provided on and in contact with the underlayer. The underlayer includes a compound represented by a general formula MgO.sub.(1-x), where x falls within a range of 0.07 to 0.25. The magnetic layer includes an alloy having a L1.sub.0 structure, and the alloy having the L1.sub.0 structure includes one or more elements selected from a group consisting of Al, Si, Ga, and Ge.