Provided is a sputtering target or a film which is characterized by containing 0.1 to 10 mol % of an oxide of one or more types selected from FeO, Fe.sub.3O.sub.4, K.sub.2O, Na.sub.2O, PbO, and ZnO, 5 to 70 mol % of Pt, and the remainder being Fe. The present invention addresses the issue of providing a sputtering target capable of considerably reducing the particles caused by nonmagnetic materials and significantly improving the yield during deposition. It is thereby possible to deposit a quality magnetic recording layer and improve yield of a magnetic recording medium.

Provided is a sputtering target or a film which is characterized by containing 0.1 to 10 mol % of an oxide of one or more types selected from FeO, Fe.sub.3O.sub.4, K.sub.2O, Na.sub.2O, PbO, and ZnO, 5 to 70 mol % of Pt, and the remainder being Fe. The present invention addresses the issue of providing a sputtering target capable of considerably reducing the particles caused by nonmagnetic materials and significantly improving the yield during deposition. It is thereby possible to deposit a quality magnetic recording layer and improve yield of a magnetic recording medium.

A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.

A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.

Provided is a sputtering target with which it is possible to form a magnetic thin film having a high coercive force Hc.

The sputtering target is a sputtering target that contains metallic Co, metallic Pt, and an oxide, wherein the sputtering target contains no metallic Cr except inevitable impurities, the oxide is B.sub.2O.sub.3 and the sputtering target comprises 10 to 50 vol % of the oxide.

Provided is a sputtering target with which it is possible to form a magnetic thin film having a high coercive force Hc.

The sputtering target is a sputtering target that contains metallic Co, metallic Pt, and an oxide, wherein the sputtering target contains no metallic Cr except inevitable impurities, the oxide is B.sub.2O.sub.3 and the sputtering target comprises 10 to 50 vol % of the oxide.

Provided is a sputtering target with which it is possible to form a magnetic thin film having a high coercive force Hc. The sputtering target is a sputtering target that contains metallic Co, metallic Pt, and an oxide, wherein the sputtering target contains no metallic Cr except inevitable impurities, the oxide has B.sub.2O.sub.3, and the sputtering target comprises 10 to 50 vol % of the oxide.

Provided is a sputtering target with which it is possible to form a magnetic thin film having a high coercive force Hc. The sputtering target is a sputtering target that contains metallic Co, metallic Pt, and an oxide, wherein the sputtering target contains no metallic Cr except inevitable impurities, the oxide has B.sub.2O.sub.3, and the sputtering target comprises 10 to 50 vol % of the oxide.

A magnetic recording medium is provided and includes a magnetic layer, a non-magnetic layer, a base layer and a back layer, wherein an average thickness t.sub.T of the magnetic recording medium is t.sub.T≤5.3 a dimensional change amount Δw in a width direction with respect to a change in tension in a longitudinal direction is 700 ppm/N≤Δw, a thickness of the non-magnetic layer is 2.0 μm or less, a squareness ratio measured in a vertical direction of the magnetic recording medium is 65% or more, and the magnetic layer includes a magnetic powder.

A magnetic recording medium includes a substrate, an underlayer provided above the substrate, and a magnetic layer provided on and in contact with the underlayer. The underlayer includes a compound represented by a general formula MgO.sub.(1-x), where x falls within a range of 0.07 to 0.25. The magnetic layer includes an alloy having a L1.sub.0 structure, and the alloy having the L1.sub.0 structure includes one or more elements selected from a group consisting of Al, Si, Ga, and Ge.