A tension feedback signal is generated to reduce tension variation on a tape occurring at a reel frequency. Tension variation information may be obtained and used to generate the tension feedback signal. The tension feedback signal may be combined with a constant tension preset signal. The combined signal may be used to drive a tape reel at a tape reel speed adjusted according to the combined signal.

A tension feedback signal is generated to reduce tension variation on a tape occurring at a reel frequency. Tension variation information may be obtained and used to generate the tension feedback signal. The tension feedback signal may be combined with a constant tension preset signal. The combined signal may be used to drive a tape reel at a tape reel speed adjusted according to the combined signal.

In one general embodiment, a method includes forming a first magnetic layer, forming a tunnel barrier layer above the first magnetic layer, and forming a second magnetic layer above the tunnel barrier layer. The tunnel barrier layer includes crystalline alumina. The tunnel barrier layer is formed at a temperature of less than 100 degrees centigrade.

In one general embodiment, a method includes forming a first magnetic layer, forming a tunnel barrier layer above the first magnetic layer, and forming a second magnetic layer above the tunnel barrier layer. The tunnel barrier layer includes crystalline alumina. The tunnel barrier layer is formed at a temperature of less than 100 degrees centigrade.

A method for writing data from a table to a tape includes setting a number of partitions on the tape, where the number of partitions is greater than or equal to a number of columns of the table to be written to the tape, and writing data from each column of the table to at least one partition of the tape, the at least one partition including two or more wraps, the data is written from a top of the two or more wraps towards a bottom of the two or more wraps in a direction of a width of the at least one partition. The written data is reciprocated from a beginning of the tape to an end of the tape in a longitudinal direction of the tape such that writing of a last data entry of one column ends at a beginning of the two or more wraps.

In one general embodiment, an apparatus includes a magnetic tunnel junction device having a reference layer, a free layer, and a tunnel barrier layer between the free and reference layers. The tunnel barrier layer is primarily crystalline alumina. In another general embodiment, a method includes forming a first magnetic layer, forming a tunnel barrier layer above the first magnetic layer, and forming a second magnetic layer above the tunnel barrier layer. The tunnel barrier layer includes crystalline alumina. The tunnel barrier layer is formed at a temperature of less than 100 degrees centigrade.

In one general embodiment, an apparatus includes a magnetic tunnel junction device having a reference layer, a free layer, and a tunnel barrier layer between the free and reference layers. The tunnel barrier layer is primarily crystalline alumina. In another general embodiment, a method includes forming a first magnetic layer, forming a tunnel barrier layer above the first magnetic layer, and forming a second magnetic layer above the tunnel barrier layer. The tunnel barrier layer includes crystalline alumina. The tunnel barrier layer is formed at a temperature of less than 100 degrees centigrade.

In one general embodiment, an apparatus includes a current perpendicular to plane magnetic read transducer having a sensor and only a single magnetic shield. In another general embodiment, an apparatus includes a magnetic read transducer having a sensor, a first magnetic shield, and a second magnetic shield. A portion of the second magnetic shield aligned with the sensor in an intended direction of tape travel thereacross has a thickness along the intended direction that is about 50% or less than a thickness of a portion of the first magnetic shield aligned in the intended direction with the portion of the second magnetic shield.

In one general embodiment, an apparatus includes a magnetic tunnel junction device having a reference layer, a free layer, and a tunnel barrier layer between the free and reference layers. The tunnel barrier layer is primarily crystalline alumina. In another general embodiment, a method includes forming a first magnetic layer, forming a tunnel barrier layer above the first magnetic layer, and forming a second magnetic layer above the tunnel barrier layer. The tunnel barrier layer includes crystalline alumina. The tunnel barrier layer is formed at a temperature of less than 100 degrees centigrade.

In one general embodiment, an apparatus includes a magnetic tunnel junction device having a reference layer, a free layer, and a tunnel barrier layer between the free and reference layers. The tunnel barrier layer is primarily crystalline alumina. In another general embodiment, a method includes forming a first magnetic layer, forming a tunnel barrier layer above the first magnetic layer, and forming a second magnetic layer above the tunnel barrier layer. The tunnel barrier layer includes crystalline alumina. The tunnel barrier layer is formed at a temperature of less than 100 degrees centigrade.