A high resolution impedance adjustment (ZQ) calibration method using a hidden least significant bit (HLSB) is provided. The high resolution ZQ calibration method generates a data input/output (DQ) code of n+1 bits without a calibration time increase by adding the hidden least significant bit (HLSB) to a ZQ code of n bits output in a ZQ calibration operation of an impedance adjustment (ZQ) pad. A change in a termination resistance of the DQ pad is reduced as small as possible by the DQ code of n+1 bits.

An integrated memory assembly comprises a memory die and a control die bonded to the memory die. The memory die includes a memory structure of non-volatile memory cells. The control die is configured to program user data to and read user data from the memory die in response to commands from a memory controller. To utilize space more efficiently on the memory die, the control die compacts fragmented data on the memory die.

To provide a semiconductor device with a novel structure. The semiconductor device includes an accelerator. The accelerator includes a first memory circuit, a second memory circuit, and an arithmetic circuit. The first memory circuit includes a first transistor. The second memory circuit includes a second transistor. Each of the first transistor and the second transistor includes a semiconductor layer including a metal oxide in a channel formation region. The arithmetic circuit includes a third transistor. The third transistor includes a semiconductor layer including silicon in a channel formation region. The first transistor and the second transistor are provided in different layers. The layer including the first transistor is provided over a layer including the third transistor. The layer including the second transistor is provided over the layer including the first transistor. The data retention characteristics of the first memory circuit are different from those of the second memory circuit.

Methods, systems, and devices for vertical transistor fuse latches are described. An apparatus may include a substrate and a memory array that is coupled with the substrate. The apparatus may also include a latch that is configured to store information from a fuse for the memory array. The latch may be at least partially within an additional substrate separate from and above the substrate. The latch may include a quantity of p-type vertical transistors and a quantity of n-type vertical transistors each at least partially disposed within the additional substrate above the substrate.

Disclosed is a semiconductor device including first conductive lines, second conductive lines crossing the first conductive lines, and memory cells at intersections between the first conductive lines and the second conductive lines. Each of the memory cells includes a magnetic tunnel junction pattern, a bi-directional switching pattern connected in series to the magnetic tunnel junction pattern, and a conductive pattern between the magnetic tunnel junction pattern and the bi-directional switching pattern.

A system including a stack of two or more layers of volatile memory, such as layers of a 3D stacked DRAM memory, places data in the stack based on a temperature or a refresh rate. When a threshold is exceeded, data are moved from a first region to a second region in the stack, the second region having one or both of a second temperature lower than a first temperature of the first region or a second refresh rate lower than a first refresh rate of the first region.

In some examples, a master die may receive data from one or more slave die. The master die may provide data from the master die and the data from the one or more slave die to a plurality of output terminals. Data from the master die may be provided for a portion of a data burst and data from the slave die may be provided for another portion of the data burst. In some examples, a master die may provide data to one or more slave die. The master die may provide data to the master die and the data to the one or more slave die from a plurality of input terminals. Data from the input terminals may be provided to the slave die for a portion of a data burst and data may be provided from the master die for another portion of the data burst.

Memory array structures providing for determination of resistive characteristics of access lines might include a first block of memory cells, a second block of memory cells, a first current path between a particular access line of the first block of memory cells and a particular access line of the second block of memory cells, and, optionally, a second current path between the particular access line of the second block of memory cells and a different access line of the first block of memory cells. Methods for determining resistive characteristics of access lines might include connecting the particular access line of the first block of memory cells to a driver, and determining the resistive characteristics in response to a current level through that access line and a voltage level of that access line.

A method used in forming a memory array comprising strings of memory cells comprises forming laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. The conductive tiers comprise metal along sides of the memory blocks. Silicon is formed between the memory blocks over the metal of the conductive tiers. The silicon and the metal react to form metal silicide therefrom that is directly against and longitudinally-along the metal of individual of the conductive tiers. After the reacting, unreacted of the silicon is removed from between the memory blocks and intervening material is formed between and longitudinally-along the memory blocks. Other embodiments, including structure independent of method, are disclosed.

A semiconductor device includes a first memory array which includes a first memory string including a plurality of first memory cells arranged in a vertical direction. The first memory array further includes a first conductive structure operatively coupled to the first memory string that extends through the first memory array in the vertical direction. The semiconductor device further includes a second memory array including a second memory string including a plurality of second memory cells arranged in the vertical direction. The second memory array further includes a second conductive structure operatively coupled to the second memory string that extends through the second memory array in the vertical direction. The semiconductor device further includes a bowl-shaped conductive structure interposed between the first and second memory arrays, and configured to operatively couple the first conductive structure to the second conductive structure.