An edge memory array mat with access lines that are split, and a bank of sense amplifiers formed under the edge memory array may in a region that separates the access line segment halves. The sense amplifiers of the bank of sense amplifiers are coupled to opposing ends of a first subset of the half access lines pairs. The edge memory array mat further includes access line connectors configured to connect a second subset of the half access line pairs across the region occupied by the bank of sense amplifiers to form combined or extended access lines that extend to a bank of sense amplifiers coupled between the edge memory array mat and an inner memory array mat.

A semiconductor device includes a plurality of first micro-bumps suitable for transferring normal signals; a plurality of a second micro-bumps suitable for transferring test signals; and a test circuit including a plurality of scan cells respectively corresponding to the first and second micro-bumps. The test circuit is suitable for applying signals stored in the respective scan cells to the first and second micro-bumps, feeding back the applied signals from the first and second micro-bumps to the respective scan cells, and sequentially outputting the signals stored in the scan cells to a test output pad.

Row and/or column electrode lines for a memory device are staggered such that gaps are formed between terminated lines. Vertical interconnection to central points along adjacent lines that are not terminated are made in the gap, and vertical interconnection through can additionally be made through the gap without contacting the lines of that level.

The present disclosure relates to a memory component for a System-on-Chip (SoC) structure including at least a memory array and at least a logic portion for interacting with the memory array and with the SoC structure wherein the memory component is a structurally independent semiconductor device coupled to and partially overlapping the SoC structure.

A memory device including a memory array configured to store data, a sense amplifier circuit coupled to the memory array, and a read circuit coupled to the sense amplifier circuit, wherein the read circuit includes a first input that receives a read column select signal for activating the read circuit to read the data out of the memory array through the read circuit during a read operation.

Fuses can store different delay states to cause execution of a command to be staggered for different memory dies of a memory package. Fuse arrays can be included in the memory package and programmed to cause execution of a command to be delayed by different amounts for different dies. The fuse arrays can be fabricated and then programmed to cause different delays for different dies.

A semiconductor device includes a memory mat having: a plurality of memory cells; a sense amplifier connected to a memory cell selected from the plurality of memory cells; a first power supply wiring; a first switch connected between the sense amplifier and the first power supply wiring and made an ON state in operating the sense amplifier; and a second switch connected to the sense amplifier and made an ON state in operating the sense amplifier, a second power supply wiring arranged outside the memory mat and connected to the first power supply wiring, a third power supply wiring arranged outside the memory mat and connected to the sense amplifier via the second switch, and a short switch arranged outside the memory mat and connected between the second and third power supply wirings. Here, in operating the sense amplifier, the short switch is made an ON state.

A word line driver includes a PMOS area, a NMOS area, first gates, and second gates. The PMOS area includes first active areas extending along a first direction. The first active area includes a first channel area, a first source area and a first drain area. The NMOS area includes second active areas. The second active area includes a second channel area, a second source area, a second drain area, a third channel area, a third source area, and a third drain area. The extension direction of the first gate corresponding to the first active area is inclined compared with the first direction. The second gate covers the third channel area. The second gate, the third source area and the third drain area constitute a holding transistor.

A method for automatic expansion of a storage array includes: acquiring a word-line total number and bit-line total number of a target expanded storage array; calculating a translation amount of a translation array in a translation direction according to the word-line total number and the bit-line total number, a word-line total number and bit-line total number of the translation array and a preset translation rule, and calculating a number of repetitions of a repetition array in a repetition direction according to the translation amount, a word-line total number and bit-line total number of the repetition array and a preset repetition rule; and controlling at least part of the translation array and at least part of the repetition array to translate the translation amount along the translation direction and controlling the repetition array to repeat for the number of repetitions along the repetition direction to obtain the target expanded storage array.

A semiconductor device, the device including: a first level including control circuits, where the control circuits include a plurality of first transistors and a plurality of metal layers; and a memory level disposed on top of the first level, where the memory level includes an array of memory cells, where each of the memory cells includes at least one second transistor, where the control circuits control access to the array of memory cells, where the first level is bonded to the memory level, where the bonded includes oxide to oxide bonding regions and a plurality of metal to metal bonding regions, and where at least a portion of the array of memory cells is disposed directly above at least one of the plurality of metal to metal bonding regions.