Embodiments of a system and method for providing a flexible memory system are generally described herein. In some embodiments, a substrate is provided, wherein a stack of memory is coupled to the substrate. The stack of memory includes a number of vaults. A controller is also coupled to the substrate and includes a number of vault interface blocks coupled to the number of vaults of the stack of memory, wherein the number of vault interface blocks is less than the number of vaults.

A memory is provided. The memory includes: a control chip; and a plurality of storage chips, in which the plurality of storage chips are electrically connected with the control chip via a common communication channel, the plurality of storage chips are configured to perform information interaction with the control chip by adopting different clock edges of a first clock signal, the first clock signal has a first clock cycle, the different clock edges include two consecutive rising edges and/or two consecutive falling edges, the plurality of storage chips are further configured to receive a second clock signal and distinguish the different clock edges based on the second clock signal, and a second clock cycle of the second clock signal is greater than the first clock cycle.

The disclosure provides a semiconductor storage device and a reading method, which may achieve high-speed processing time for error detection and correction and achieve miniaturization. The flash memory of the disclosure has a NAND chip and an ECC chip. The NAND chip has: a memory array; a page buffer/sensing circuit, including latches L1 and L2 ; and dedicated input and output terminals, which may be used for data transmission with ECC chip. The latch L1 contains cache C0 and cache C1, and the latch L2 only contains the cache C1. The data in the cache C0 of the latch L1 and the data in the cache C1 of the latch L2 are transmitted to the ECC chip. In response to outputting data at the initial address from the ECC chip, the next page is read from the memory array, and the read data is held in the latch L1.

Apparatus and methods are disclosed, including memory devices and systems. Example memory devices, systems and methods include a buffer to translate high speed data interactions on a host interface side into slower, wider data interactions on a DRAM interface side. Example memory devices, systems and methods include a multiplexer circuit to further facilitate use of slower, and wider bandwidth memory devices. Devices and methods described may be configured to substantially match the capacity of a narrower, higher speed host interface.

A memory sub-system including a memory device, wherein the memory device includes a circuit, operatively coupled to an array data bus of a memory array, and control logic, operatively coupled with the circuit, to perform operations including: deserializing a serial data stream in a first time domain to generate at least one of a set of rising data portions or a set of falling data portions; and synchronizing the at least one of the set of rising data portions or the set of falling data portions in a second time domain using at least one of a set of rising edge clock signals or a set of falling edge clock signals generated by a ring counter portion.

A semiconductor device may implement a command-over-data function on a multi-level signaling data bus architectures. The multi-level signaling data bus architecture may support a multi-level communication architecture that includes a plurality of channels each including conversion of M bitstreams to N multi-level signals, where M is greater than N. A bitstream includes a plurality of bits provided serially, with each bit of the bitstream provided over a period of time. The multi-level signaling data bus is adapted to transmit data using a first set of assigned states of the data bus, and to transmit commands using at least a second assigned state of the data bus.

Methods, systems, and devices for dynamically configuring transmission lines of a bus between two electronic devices (e.g., a controller and memory device) are described. A first device may determine a quantity of bits (e.g., data bits, control bits) to be communicated with a second device over a data bus. The first device may partition the data bus into a first set of transmission lines (e.g., based on the quantity of data bits) and a second set of transmission lines (e.g., based on the quantity of control bits). The first device may communicate the quantity of data bits over the first set of transmission lines and communicate the quantity of control bits over the second set of transmission lines. In some cases, the first device may repartition the data bus based on different quantities of data bits and control bits to be communicated with the second device at a different time.

Methods, apparatus, systems and articles of manufacture are disclosed facilitate read-modify-write support in a coherent victim cache with parallel data paths. An example apparatus includes a random-access memory configured to be coupled to a central processing unit via a first interface and a second interface, the random-access memory configured to obtain a read request indicating a first address to read via a snoop interface, an address encoder coupled to the random-access memory, the address encoder to, when the random-access memory indicates a hit of the read request, generate a second address corresponding to a victim cache based on the first address, and a multiplexer coupled to the victim cache to transmit a response including data obtained from the second address of the victim cache.

Based on power on of an electronic device, a location of first data in a NAND flash memory of an electronic device is determined. The first data is transmitted to a shadow RAM of the electronic device, outputting the first data is output from the shadow RAM to a host device of the electronic device through a serial peripheral interface (SPI) when accessing the location of the first data in the NAND Flash memory.

In one embodiment, a method of performing an active polling operation can include: (i) detecting a self-timed operation that is to be executed on a serial memory device; (ii) determining if an active polling mode has been enabled; (iii) determining when the self-timed operation has completed execution on the serial memory device; and (iv) providing a completion indication external to the serial memory device when the self-timed operation has completed execution and the active polling mode is enabled.